| Surface transfer doping of diamond: A review KG Crawford, I Maini, DA Macdonald, DAJ Moran Progress in Surface Science 96 (1), 100613, 2021 | 138 | 2021 |
| Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran Applied Physics Letters 103 (20), 2013 | 124 | 2013 |
| Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ... Applied Physics Letters 108 (4), 2016 | 104 | 2016 |
| Thermally stable, high performance transfer doping of diamond using transition metal oxides KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... Scientific Reports 8 (1), 3342, 2018 | 67 | 2018 |
| The direct hydrothermal deposition of cobalt-doped MoS 2 onto fluorine-doped SnO 2 substrates for catalysis of the electrochemical hydrogen evolution reaction I Roger, R Moca, HN Miras, KG Crawford, DAJ Moran, AY Ganin, ... Journal of Materials Chemistry A 5 (4), 1472-1480, 2017 | 50 | 2017 |
| Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ... IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020 | 35 | 2020 |
| Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon B Benakaprasad, AM Eblabla, X Li, KG Crawford, K Elgaid IEEE Transactions on Electron Devices 67 (3), 2020 | 31 | 2020 |
| Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ... Applied Physics Letters 117 (12), 2020 | 28 | 2020 |
| The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond KG Crawford, A Tallaire, X Li, DA Macdonald, D Qi, DAJ Moran Diamond and Related Materials 84, 48-54, 2018 | 27 | 2018 |
| Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5as a Surface Electron Acceptor DA Macdonald, KG Crawford, A Tallaire, R Issaoui, DAJ Moran IEEE Electron Device Letters 39 (9), 1354-1357, 2018 | 23 | 2018 |
| Thermal performance of diamond field-effect transistors JS Lundh, D Shoemaker, AG Birdwell, JD Weil, LM De La Cruz, PB Shah, ... Applied Physics Letters 119 (14), 2021 | 12 | 2021 |
| Electron-beam annealing of Josephson junctions for frequency tuning of quantum processors Y Balaji, N Acharya, R Armstrong, KG Crawford, S Danilin, T Dixon, ... arXiv preprint arXiv:2402.17395, 2024 | 6 | 2024 |
| High synergy atomic layer etching of AlGaN/GaN with HBr and Ar KG Crawford, J Grant, DT Hemakumara, X Li, I Thayne, DAJ Moran Journal of Vacuum Science & Technology A 40 (4), 2022 | 3 | 2022 |
| Surface transfer doping of diamond using transition metal oxides KG Crawford University of Glasgow, 2017 | 1 | 2017 |
| Integration of Through‐Sapphire Substrate Machining with Superconducting Quantum Processors N Acharya, R Armstrong, Y Balaji, KG Crawford, JC Gates, PC Gow, ... Advanced Materials, 2411780, 2024 | | 2024 |
| Qubit frequency tuning via electron-beam irradiation C Shelly, Y Balaji, N Acharya, R Armstrong, K Crawford, S Danilin, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Strain effects on electronic properties of diamond surfaces M Neupane, A Birdwell, D Ruzmetov, K Crawford, P Shah, J Weil, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Impact of ICP Etching on the Formation of Surface Defects on Hydrogen Terminated Diamond KG Crawford, A Tallaire, DAJ Moran | | 2015 |
| Investigation into the Efficiency and Stability of Surface-Transfer Doped Hydrogen-Terminated Diamond Using MoO3 KG Crawford, D Qi, A Tallaire, C Verona, E Limiti, DAJ Moran | | 2015 |
| Temperature Stable Surface Transfer Doping of H-Terminated Diamond via MoO3 KG Crawford, SAO Russell, D Qi, L Cao, A Tallaire, ATS Wee, DAJ Moran | | 2014 |
David MoranThe University of GlasgowAdresse e-mail validée de glasgow.ac.uk