Yaohua Tan

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Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
avik W ghoshProfessor, University of Virginia, Electrical EngineeringAdresse e-mail validée de virginia.edu
Tillmann KubisPurdue UniversityAdresse e-mail validée de purdue.edu
Michael PovolotskyiJacobs TechnologiesAdresse e-mail validée de jacobs.com
JIYUAN ZHENGTsinghua UniversityAdresse e-mail validée de tsinghua.edu.cn
Rajib RahmanProfessor of Physics, University of New South WalesAdresse e-mail validée de unsw.edu.au
Timothy BoykinUniversity of Alabama in HuntsvilleAdresse e-mail validée de uah.edu
Zhengping JiangSamsung Semiconductor Inc.Adresse e-mail validée de samsung.com
Yu HeSynopsys Inc.Adresse e-mail validée de SYNOPSYS.COM
Fan ChenSamsungAdresse e-mail validée de purdue.edu
Ganesh HegdeAdvanced Logic Lab, Samsung Semiconductor IncAdresse e-mail validée de ssi.samsung.com
James E FonsecaPurdue UniversityAdresse e-mail validée de purdue.edu
Jianhua MaComputational Biologist in LifeQ, Inc.Adresse e-mail validée de virginia.edu
Hoon Ryu (류훈)Kumoh National Institute of TechnologyAdresse e-mail validée de kumoh.ac.kr
Arvind AjoyAssociate Professor, Indian Institute of Technology PalakkadAdresse e-mail validée de iitpkd.ac.in
Mehdi Salmani JelodarLead Data Scientist at BCG (The Boston Consulting Group)Adresse e-mail validée de bcg.com
Yunkun XieUniversity of VirginiaAdresse e-mail validée de virginia.edu
Lingquan WangUC San Diego; BroadcomAdresse e-mail validée de ucsd.edu
James Jeremy MacDonald LawGener8Adresse e-mail validée de gener8.net
Mark J.W. RodwellProfessor of Electrical and Computer Engineering, University of California, Santa BarbaraAdresse e-mail validée de ece.ucsb.edu

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Yaohua Tan

University of Virginia

Adresse e-mail validée de purdue.edu - Page d'accueil

nano-electronic


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	249	2015
Efficient and realistic device modeling from atomic detail to the nanoscale JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ... Journal of Computational Electronics 12 (4), 592-600, 2013	124	2013
Saving Moore’s law down to 1 nm channels with anisotropic effective mass H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman Scientific reports 6 (1), 31501, 2016	93	2016
Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution YP Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 92 (8), 085301, 2015	82	2015
Transferable tight-binding model for strained group IV and III-V materials and heterostructures Y Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 94 (4), 045311, 2016	78	2016
Digital alloy InAlAs avalanche photodiodes J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ... Journal of Lightwave Technology 36 (17), 3580-3585, 2018	48	2018
Spin-lattice relaxation times of single donors and donor clusters in silicon YL Hsueh, H Büch, Y Tan, Y Wang, LCL Hollenberg, G Klimeck, ... Physical review letters 113 (24), 246406, 2014	48	2014
III–V FET channel designs for high current densities and thin inversion layers M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ... 68th Device Research Conference, 149-152, 2010	46	2010
Colossal tunability in high frequency magnetoelectric voltage tunable inductors Y Yan, LD Geng, Y Tan, J Ma, L Zhang, M Sanghadasa, K Ngo, ... Nature communications 9 (1), 4998, 2018	42	2018
Switching mechanism and the scalability of vertical-TFETs F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018	42	2018
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding Y Tan, FW Chen, AW Ghosh Applied Physics Letters 109 (10), 2016	40	2016
Design principles for HgTe based topological insulator devices P Sengupta, T Kubis, Y Tan, M Povolotskyi, G Klimeck Journal of Applied Physics 114 (4), 2013	40	2013
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin Journal of Computational Electronics 12, 56-60, 2013	39	2013
Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ... Photonics Research 6 (8), 794-799, 2018	38	2018
Toward deterministic construction of low noise avalanche photodetector materials AK Rockwell, M Ren, M Woodson, AH Jones, SD March, Y Tan, Y Yuan, ... Applied Physics Letters 113 (10), 2018	37	2018
Machine learning electron correlation in a disordered medium J Ma, P Zhang, Y Tan, AW Ghosh, GW Chern Physical Review B 99 (8), 085118, 2019	26	2019
Single layer MoS₂ band structure and transport M Salmani-Jelodar, Y Tan, G Klimeck 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011	25	2011
Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ... Applied Physics Letters 115 (12), 2019	24	2019
Analytical electron-mobility model for arbitrarily stressed silicon Y Tan, X Li, L Tian, Z Yu IEEE transactions on electron devices 55 (6), 1386-1390, 2008	24	2008
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ... Proc. SISPAD, 1-4, 2012	23	2012

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