| Synthesis and applications of III–V nanowires E Barrigón, M Heurlin, Z Bi, B Monemar, L Samuelson Chemical reviews 119 (15), 9170-9220, 2019 | 324 | 2019 |
| Nitride nanowires and method of producing such W Seifert, D Asoli, Z Bi US Patent 7,829,443, 2010 | 82 | 2010 |
| InGaN platelets: synthesis and applications toward green and red light-emitting diodes Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ... Nano Letters 19 (5), 2832-2839, 2019 | 57 | 2019 |
| Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence G Pozina, R Ciechonski, Z Bi, L Samuelson, B Monemar Applied Physics Letters 107 (25), 2015 | 56 | 2015 |
| Electrospraying of colloidal nanoparticles for seeding of nanostructure growth PHM Böttger, Z Bi, D Adolph, KA Dick, LS Karlsson, MNA Karlsson, ... Nanotechnology 18 (10), 105304, 2007 | 49 | 2007 |
| Dielectric properties of AlN film on Si substrate ZX Bi, YD Zheng, R Zhang, SL Gu, XQ Xiu, LL Zhou, B Shen, DJ Chen, ... Journal of Materials Science: Materials in Electronics 15, 317-320, 2004 | 40 | 2004 |
| Nitride nanowires and method of producing such W Seifert, D Asoli, Z Bi US Patent 8,309,439, 2012 | 39 | 2012 |
| Insights into the mechanism for vertical graphene growth by plasma-enhanced chemical vapor deposition J Sun, T Rattanasawatesun, P Tang, Z Bi, S Pandit, L Lam, C Wasén, ... ACS Applied Materials & Interfaces 14 (5), 7152-7160, 2022 | 37 | 2022 |
| High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds Z Bi, A Gustafsson, F Lenrick, D Lindgren, O Hultin, L Wallenberg, ... Journal of Applied Physics 123 (2), 2018 | 37 | 2018 |
| X-ray Bragg ptychography on a single InGaN/GaN core–shell nanowire D Dzhigaev, T Stankevič, Z Bi, S Lazarev, M Rose, A Shabalin, ... ACS nano 11 (7), 6605-6611, 2017 | 33 | 2017 |
| Realization of ultrahigh quality InGaN platelets to be used as relaxed templates for red micro-LEDs Z Bi, T Lu, J Colvin, E Sjogren, N Vainorius, A Gustafsson, J Johansson, ... ACS applied materials & interfaces 12 (15), 17845-17851, 2020 | 32 | 2020 |
| Synthesis of Zinc Aluminate Spinel Film through the Solid‐Phase Reaction between Zinc Oxide Film and α‐Alumina Substrate Z Bi, R Zhang, X Wang, S Gu, B Shen, Y Shi, Z Liu, Y Zheng Journal of the American Ceramic Society 86 (12), 2059-2062, 2003 | 30 | 2003 |
| Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam T Stankevič, D Dzhigaev, Z Bi, M Rose, A Shabalin, J Reinhardt, ... Applied Physics Letters 107 (10), 2015 | 28 | 2015 |
| Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb (Zr0. 53Ti0. 47) O3/AlxGa1-xN/GaN structures B Shen, W Li, T Someya, Z Bi, J Liu, H Zhou, R Zhang, F Yan, Y Shi, Z Liu, ... Japanese journal of applied physics 41 (4S), 2528, 2002 | 26 | 2002 |
| Measurement of strain in InGaN/GaN nanowires and nanopyramids T Stankevič, S Mickevičius, M Schou Nielsen, O Kryliouk, R Ciechonski, ... Journal of Applied Crystallography 48 (2), 344-349, 2015 | 25 | 2015 |
| Structural changes in a single GaN nanowire under applied voltage bias S Lazarev, D Dzhigaev, Z Bi, A Nowzari, YY Kim, M Rose, IA Zaluzhnyy, ... Nano letters 18 (9), 5446-5452, 2018 | 21 | 2018 |
| The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire ZX Bi, R Zhang, ZL Xie, XQ Xiu, YD Ye, B Liu, SL Gu, B Shen, Y Shi, ... Materials Letters 58 (27-28), 3641-3644, 2004 | 21 | 2004 |
| Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications M Khalilian, Z Bi, J Johansson, F Lenrick, O Hultin, J Colvin, R Timm, ... Small 16 (30), 1907364, 2020 | 17 | 2020 |
| From nanoLEDs to the realization of RGB-emitting microLEDs Z Bi, Z Chen, F Danesh, L Samuelson Semiconductors and Semimetals 106, 223-251, 2021 | 16 | 2021 |
| Self-assembled InN quantum dots on side facets of GaN nanowires Z Bi, M Ek, T Stankevic, J Colvin, M Hjort, D Lindgren, F Lenrick, ... Journal of Applied Physics 123 (16), 2018 | 16 | 2018 |
