| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 212 | 2020 |
| Wake‐Up Effect in HfO2‐Based Ferroelectric Films P Jiang, Q Luo, X Xu, T Gong, P Yuan, Y Wang, Z Gao, W Wei, L Tai, H Lv Advanced Electronic Materials 7 (1), 2000728, 2021 | 124 | 2021 |
| Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films Q Luo, H Ma, H Su, KH Xue, R Cao, Z Gao, J Yu, T Gong, X Xu, J Yin, ... IEEE Electron Device Letters 40 (4), 570-573, 2019 | 48 | 2019 |
| Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node ferro FinFET device with charge trapping and domain switching effects Q Luo, T Gong, Y Cheng, Q Zhang, H Yu, J Yu, H Ma, X Xu, K Huang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2018 | 48 | 2018 |
| Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations W Wei, W Zhang, F Wang, X Ma, Q Wang, P Sang, X Zhan, Y Li, L Tai, ... 2020 IEEE International Electron Devices Meeting (IEDM), 39.6. 1-39.6. 4, 2020 | 47 | 2020 |
| Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics P Yuan, GQ Mao, Y Cheng, KH Xue, Y Zheng, Y Yang, P Jiang, Y Xu, ... Nano Research 15 (4), 3667-3674, 2022 | 37 | 2022 |
| Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System Q Luo, X Zhang, J Yu, W Wang, T Gong, X Xu, J Yin, P Yuan, L Tai, ... IEEE Electron Device Letters 40 (5), 718-721, 2019 | 34 | 2019 |
| Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2 W Wei, G Zhao, XP Zhan, W Zhang, P Sang, Q Wang, L Tai, Q Luo, Y Li, ... Journal of Applied Physics 131 (15), 2022 | 28 | 2022 |
| In-depth understanding of polarization switching kinetics in polycrystalline Hf0. 5Zr0. 5O2 ferroelectric thin film: A transition from NLS to KAI W Wei, W Zhang, L Tai, G Zhao, P Sang, Q Wang, F Chen, M Tang, ... IEDM Tech. Dig, 19, 2021 | 24 | 2021 |
| 40× retention improvement by eliminating resistance relaxation with high temperature forming in 28 nm RRAM chip X Xu, L Tai, T Gong, J Yin, P Huang, J Yu, Q Luo, J Liu, Z Yu, X Zhu, ... 2018 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2018 | 24 | 2018 |
| Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure J Yu, X Xu, T Gong, Q Luo, D Dong, P Yuan, L Tai, J Yin, X Zhu, X Wu, ... Nanoscale Research Letters 14, 1-6, 2019 | 22 | 2019 |
| Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance P Sang, Q Wang, W Wei, L Tai, X Zhan, Y Li, J Chen IEEE Transactions on Electron Devices 69 (4), 2173-2179, 2022 | 20 | 2022 |
| Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period P Jiang, W Wei, Y Yang, Y Wang, Y Xu, L Tai, P Yuan, Y Chen, Z Gao, ... Advanced Electronic Materials 8 (8), 2100662, 2022 | 16 | 2022 |
| Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms X Li, J Wu, L Tai, W Wei, P Sang, Y Feng, B Chen, G Zhao, X Zhan, ... 2022 International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2022 | 14 | 2022 |
| Classification of three-level random telegraph noise and its application in accurate extraction of trap profiles in oxide-based resistive switching memory T Gong, Q Luo, X Xu, J Yu, D Dong, H Lv, P Yuan, C Chen, J Yin, L Tai, ... IEEE Electron Device Letters 39 (9), 1302-1305, 2018 | 14 | 2018 |
| Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements T Gong, Q Luo, H Lv, X Xu, J Yu, P Yuan, D Dong, C Chen, J Yin, L Tai, ... IEEE Electron Device Letters 39 (8), 1152-1155, 2018 | 12 | 2018 |
| Toward Low-Thermal-Budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation L Tai, W Wei, P Jiang, P Sang, X Li, G Zhao, X Dou, X Zhan, Q Luo, J Wu, ... IEEE Electron Device Letters 44 (12), 1959-1962, 2023 | 11 | 2023 |
| A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ … P Jiang, H Jiang, Y Yang, L Tai, W Wei, T Gong, Y Wang, P Xu, S Lv, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 9 | 2023 |
| Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films L Tai, W Wei, P Sang, X Li, G Zhao, P Jiang, P Yuan, Q Luo, X Zhan, J Wu, ... IEEE Electron Device Letters 44 (5), 753-756, 2023 | 9 | 2023 |
| Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation X Dou, W Wei, P Sang, L Tai, X Li, X Zhan, J Wu, J Chen Applied Physics Letters 124 (9), 2024 | 8 | 2024 |
