Jun Z. Huang

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Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Michael PovolotskyiJacobs TechnologiesAdresse e-mail validée de jacobs.com
Mark J.W. RodwellProfessor of Electrical and Computer Engineering, University of California, Santa BarbaraAdresse e-mail validée de ece.ucsb.edu
Weng Cho ChewDistinguished Professor, Purdue UniversityAdresse e-mail validée de purdue.edu
Li Jun JiangDept. of ECE, Missouri University of Science and TechnologyAdresse e-mail validée de umsystem.edu
Wen-Yan YinProfessor of ISEE, Zhejiang UniversityAdresse e-mail validée de zju.edu.cn
ChiYung YamUniversity of Electronic Science and Technology of ChinaAdresse e-mail validée de uestc.edu.cn
Rajib RahmanProfessor of Physics, University of New South WalesAdresse e-mail validée de unsw.edu.au
Lining ZHANGPeking UniversityAdresse e-mail validée de pku.edu.cn
Tillmann KubisPurdue UniversityAdresse e-mail validée de purdue.edu
Terry YeSouthern University of Science and Technology / Carnegie Mellon UniversityAdresse e-mail validée de andrew.cmu.edu
Tarek AmeenComponent Design Engineer at IntelAdresse e-mail validée de intel.com
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurAdresse e-mail validée de iitk.ac.in
Wenchao ChenZJU-UIUC Institute, Zhejiang UniversityAdresse e-mail validée de zju.edu.cn
James CharlesPurdue UniversityAdresse e-mail validée de purdue.edu
Mansun ChanChair Professor, HKUSTAdresse e-mail validée de ust.hk
Yuxiong LongInstitute of semiconductors, CASAdresse e-mail validée de semi.ac.cn
Xiang-Wei JiangInstitute of Semiconductors, Chinese Academy of SciencesAdresse e-mail validée de semi.ac.cn
Devin Verreckimec, LeuvenAdresse e-mail validée de imec.be
Stanislav MarkovThe University of Hong KongAdresse e-mail validée de stanmarkov.com

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Jun Z. Huang

Broadcom Inc.

Adresse e-mail validée de purdue.edu - Page d'accueil

Device Characterization TCAD Compact Modeling


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Steep Slope Devices and TFETs L Zhang, J Huang, M Chan Tunneling Field Effect Transistor Technology, 1-31, 2016	43	2016
High-Current Tunneling FETs With ( ) Orientation and a Channel Heterojunction P Long, JZ Huang, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Electron Device Letters 37 (3), 345-348, 2016	34	2016
Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs P Long, E Wilson, J Huang, G Klimeck, M Rodwell, M Povolotskyi Electron Device Letters, IEEE 37 (1), 107 - 110, 2016	28	2016
Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions TA Ameen, H Ilatikhameneh, JZ Huang, M Povolotskyi, R Rahman, ... IEEE Transactions on Electron Devices 64 (6), 2512-2518, 2017	27	2017
Model order reduction for multiband quantum transport simulations and its application to p-type junctionless transistors JZ Huang, WC Chew, J Peng, CY Yam, LJ Jiang, GH Chen IEEE Transactions on Electron Devices 60 (7), 2111-2119, 2013	27	2013
P-Type Tunnel FETs With Triple Heterojunctions JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Journal of the Electron Devices Society 4 (6), 410 - 415, 2016	25	2016
A compact broadband patch antenna for UHF RFID tags JZ Huang, PH Yang, WC Chew, TT Ye 2009 Asia Pacific Microwave Conference, 1044-1047, 2009	24	2009
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, T Ameen, R Rahman, ... IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017	23	2017
Robust mode space approach for atomistic modeling of realistically large nanowire transistors JZ Huang, H Ilatikhameneh, M Povolotskyi, G Klimeck Journal of Applied Physics 123 (4), 044303, 2018	21	2018
Scalable GaSb/InAs tunnel FETs with nonuniform body thickness JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Transactions On Electron Devices 64 (1), 96-101, 2016	21	2016
A novel broadband patch antenna for universal UHF RFID tags JZ Huang, PH Yang, WC Chew, TT Ye Microwave and Optical Technology Letters 52 (12), 2653-2657, 2010	20	2010
A multi-scale modeling of junctionless field-effect transistors CY Yam, J Peng, Q Chen, S Markov, JZ Huang, N Wong, W Cho Chew, ... Applied Physics Letters 103 (6), 062109, 2013	19	2013
Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation CY Chen, H Ilatikhameneh, JZ Huang, G Klimeck, M Povolotskyi IEEE Transactions on Electron Devices 67 (8), 3478-3485, 2020	18	2020
Quantum Transport Simulation of III-V TFETs with Reduced-Order k ⋅ p k· p Method JZ Huang, L Zhang, P Long, M Povolotskyi, G Klimeck Tunneling Field Effect Transistor Technology, 151-180, 2016	18	2016
Investigation on self-heating effect in carbon nanotube field-effect transistors CJ Xing, WY Yin, LT Liu, J Huang IEEE Transactions on Electron Devices 58 (2), 523-529, 2010	17	2010
High-current InP-based triple heterojunction tunnel transistors P Long, JZ Huang, M Povolotskyi, D Verreck, G Klimeck, MJW Rodwell 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016	16	2016
Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors P Long, M Povolotskyi, JZ Huang, H Ilatikhameneh, T Ameen, R Rahman, ... Proc. 74th Annu. Device Res. Conf.(DRC), 1-2, 2016	16*	2016
Efficient simulation and analysis of quantum ballistic transport in nanodevices with AWE JZ Huang, WC Chew, M Tang, L Jiang IEEE Transactions on Electron Devices 59 (2), 468-476, 2011	16	2011
Design Considerations for Si-and Ge-Stacked Nanosheet pMOSFETs Based on Quantum Transport Simulations S Zhang, JZ Huang, H Xie, A Khaliq, D Wang, W Chen, K Miao, H Chen, ... IEEE Transactions on Electron Devices 67 (1), 26-32, 2019	14	2019
Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: – , – , Energy Delay, and Parasitic Effects S Zhang, JZ Huang, A Khaliq, H Xie, W Chen, WY Yin IEEE Transactions on Electron Devices 66 (1), 655-663, 2018	14	2018

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