| Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers V Lebedev, V Cimalla, T Baumann, O Ambacher, FM Morales, JG Lozano Journal of applied physics 100 (9), 2006 | 103 | 2006 |
| Determination of the composition of InxGa1− xN from strain measurements FM Morales, D González, JG Lozano, R García, S Hauguth-Frank, ... Acta Materialia 57 (19), 5681-5692, 2009 | 92 | 2009 |
| Identification of III–N nanowire growth kinetics via a marker technique R Songmuang, T Ben, B Daudin, D González, E Monroy Nanotechnology 21 (29), 295605, 2010 | 86 | 2010 |
| Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures DF Reyes, F Bastiman, CJ Hunter, DL Sales, AM Sanchez, JPR David, ... Nanoscale research letters 9, 1-8, 2014 | 72 | 2014 |
| Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ... Journal of applied physics 100 (9), 2006 | 68 | 2006 |
| Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods J Rodrigues, T Holz, R Fath Allah, D Gonzalez, T Ben, MR Correia, ... Scientific Reports 5 (1), 10783, 2015 | 57 | 2015 |
| Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ... Acta Materialia 58 (12), 4120-4125, 2010 | 46 | 2010 |
| Misfit relaxation of InN quantum dots: Effect of the GaN capping layer JG Lozano, AM Sánchez, R García, D Gonzalez, O Briot, S Ruffenach Applied physics letters 88 (15), 2006 | 46 | 2006 |
| Coalescence aspects of III-nitride epitaxy V Lebedev, K Tonisch, F Niebelschütz, V Cimalla, D Cengher, I Cimalla, ... Journal of Applied Physics 101 (5), 2007 | 43 | 2007 |
| Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy JG Lozano, AM Sánchez, R García, D González, D Araújo, S Ruffenach, ... Applied Physics Letters 87 (26), 2005 | 40 | 2005 |
| Study of morphological and related properties of aligned zinc oxide nanorods grown by vapor phase transport on chemical bath deposited buffer layers D Byrne, R Fath Allah, T Ben, D Gonzalez Robledo, B Twamley, ... Crystal growth & design 11 (12), 5378-5386, 2011 | 38 | 2011 |
| Ch. Y. Wang, V. Cimalla, and O. Ambacher JG Lozano, FM Morales, R García, D González, V Lebedev Appl. Phys. Lett 90, 091901, 2007 | 38 | 2007 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 36 | 2017 |
| Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate AD Utrilla, DF Grossi, DF Reyes, A Gonzalo, V Braza, T Ben, D González, ... Applied Surface Science 444, 260-266, 2018 | 35 | 2018 |
| Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy L Dominguez, DF Reyes, F Bastiman, DL Sales, RD Richards, D Mendes, ... Applied Physics Express 6 (11), 112601, 2013 | 35 | 2013 |
| High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing JM Ulloa, JM Llorens, B Alén, DF Reyes, DL Sales, D González, A Hierro Applied Physics Letters 101 (25), 2012 | 35 | 2012 |
| Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs M Herrera, QM Ramasse, DG Morgan, D Gonzalez, J Pizarro, A Yanez, ... Physical Review B—Condensed Matter and Materials Physics 80 (12), 125211, 2009 | 33 | 2009 |
| Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications DF Reyes, V Braza, A Gonzalo, AD Utrilla, JM Ulloa, T Ben, D González Applied Surface Science 442, 664-672, 2018 | 32 | 2018 |
| Strain-balanced type-II superlattices for efficient multi-junction solar cells A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, D Fuertes Marrón, ... Scientific reports 7 (1), 4012, 2017 | 31 | 2017 |
| General route for the decomposition of InAs quantum dots during the capping process D González, DF Reyes, AD Utrilla, T Ben, V Braza, A Guzman, A Hierro, ... Nanotechnology 27 (12), 125703, 2016 | 31 | 2016 |
