| Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ... Photonics Research 8 (4), 589-594, 2020 | 72 | 2020 |
| Stabilization of sputtered AlN/sapphire templates during high temperature annealing S Hagedorn, S Walde, A Mogilatenko, M Weyers, L Cancellara, ... Journal of Crystal Growth 512, 142-146, 2019 | 49 | 2019 |
| Displacement Talbot lithography for nano-engineering of III-nitride materials PM Coulon, B Damilano, B Alloing, P Chausse, S Walde, J Enslin, ... Microsystems & Nanoengineering 5 (1), 52, 2019 | 48 | 2019 |
| Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities J Ruschel, J Glaab, N Susilo, S Hagedorn, S Walde, E Ziffer, HK Cho, ... Applied Physics Letters 117 (24), 2020 | 46 | 2020 |
| Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes S Hagedorn, S Walde, A Knauer, N Susilo, D Pacak, L Cancellara, ... physica status solidi (a) 217 (14), 1901022, 2020 | 46 | 2020 |
| Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy S Walde, S Hagedorn, M Weyers Japanese Journal of Applied Physics 58 (SC), SC1002, 2019 | 40 | 2019 |
| Nanopatterned sapphire substrates in deep-UV LEDs: is there an optical benefit? P Manley, S Walde, S Hagedorn, M Hammerschmidt, S Burger, C Becker Optics Express 28 (3), 3619-3635, 2020 | 31 | 2020 |
| Improving AlN crystal quality and strain management on nanopatterned sapphire substrates by high‐temperature annealing for UVC light‐emitting diodes S Hagedorn, S Walde, N Susilo, C Netzel, N Tillner, RS Unger, P Manley, ... physica status solidi (a) 217 (7), 1900796, 2020 | 25 | 2020 |
| High‐Temperature Annealing and Patterned AlN/Sapphire Interfaces S Hagedorn, A Mogilatenko, S Walde, D Pacak, J Weinrich, C Hartmann, ... physica status solidi (b) 258 (10), 2100187, 2021 | 20 | 2021 |
| Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates CY Huang, S Walde, CL Tsai, C Netzel, HH Liu, S Hagedorn, YR Wu, ... Japanese journal of applied physics 59 (7), 070904, 2020 | 20 | 2020 |
| AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ... Journal of Crystal Growth 531, 125343, 2020 | 20 | 2020 |
| High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes S Walde, CY Huang, CL Tsai, WH Hsieh, YK Fu, S Hagedorn, HW Yen, ... Acta Materialia 226, 117625, 2022 | 19 | 2022 |
| Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors S Walde, M Brendel, U Zeimer, F Brunner, S Hagedorn, M Weyers Journal of Applied Physics 123 (16), 2018 | 18 | 2018 |
| Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers A Mogilatenko, S Walde, S Hagedorn, C Netzel, CY Huang, M Weyers Journal of Applied Physics 131 (4), 2022 | 17 | 2022 |
| Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing L Cancellara, T Markurt, T Schulz, M Albrecht, S Hagedorn, S Walde, ... Journal of Applied Physics 130 (20), 2021 | 16 | 2021 |
| Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, PR Edwards, ... Semiconductor Science and Technology 35 (5), 054001, 2020 | 15 | 2020 |
| High‐Temperature Annealing of AlGaN S Hagedorn, T Khan, C Netzel, C Hartmann, S Walde, M Weyers physica status solidi (a) 217 (23), 2000473, 2020 | 13 | 2020 |
| Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, PR Edwards, ... Photonics Research 7 (11), B73-B82, 2019 | 13 | 2019 |
| The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures A Knauer, A Mogilatenko, J Weinrich, S Hagedorn, S Walde, T Kolbe, ... Crystal Research and Technology 55 (9), 1900215, 2020 | 10 | 2020 |
| Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing L Cancellara, S Hagedorn, S Walde, D Jaeger, M Albrecht Journal of Applied Physics 131 (21), 2022 | 6 | 2022 |
