Mike Krames

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Jonathan J. Wierer, Jr.North Carolina State University, Department of Electrical and Computer EngineeringAdresse e-mail validée de ncsu.edu
Troy TrottierUniversity of Florida, Motorola, Hewlett-Packard, Lumileds, Phillips, Soraa, SLDAdresse e-mail validée de kyocera-sldlaser.com
Aurelien DavidGoogleAdresse e-mail validée de polytechnique.org
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityAdresse e-mail validée de brown.edu
Christopher KocotDirector, Finisar CorporationAdresse e-mail validée de finisar.com
Yoon-Kyu SongSeoul National UniversityAdresse e-mail validée de snu.ac.kr
Mihail SigalasProfessor, Department of Materials Science, University of PatrasAdresse e-mail validée de upatras.gr
Andrew Y. KimLumiledsAdresse e-mail validée de alum.mit.edu
Michael CichRaxiumAdresse e-mail validée de raxium.com
Marie Anne Van De HaarSeaborough Research B.V.Adresse e-mail validée de seaborough.com
Eleni MakaronaInstitute of Nanoscience and NanotechnologyAdresse e-mail validée de inn.demokritos.gr
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityAdresse e-mail validée de yale.edu
Kevin HouserOregon State UniversityAdresse e-mail validée de oregonstate.edu
Jörg MeyerProfessor, Hochschule Hamm-LippstadtAdresse e-mail validée de hshl.de
Christophe HurniFacebookAdresse e-mail validée de engr.ucsb.edu
Anne BerendsSeaborough ResearchAdresse e-mail validée de sunled.health
Thomas M KatonaCalifornia Polytechnic State UniversityAdresse e-mail validée de calpoly.edu
Minchen WeiThe Hong Kong Polytechnic UniversityAdresse e-mail validée de polyu.edu.hk
Jerry SimmonsSandia National LaboratoriesAdresse e-mail validée de sandia.gov
Rajat SharmaStudent, Technical University of MunichAdresse e-mail validée de tum.de

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Mike Krames

Arkesso, LLC; ORCID 0000-0001-8545-851X

Adresse e-mail validée de arkesso.com - Page d'accueil

semiconductors light emitting diodes lasers lighting displays


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Status and future of high-power light-emitting diodes for solid-state lighting MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ... Journal of display technology 3 (2), 160-175, 2007	2486	2007
Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 2007	1443	2007
High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001	874	2001
Highly efficient all‐nitride phosphor‐converted white light emitting diode R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ... physica status solidi (a) 202 (9), 1727-1732, 2005	686	2005
High-power phosphor-converted light-emitting diodes based on III-nitrides R Mueller-Mach, GO Mueller, MR Krames, T Trottier IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002	671	2002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999	660	1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2 NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 2007	560	2007
History of gallium–nitride-based light-emitting diodes for illumination S Nakamura, MR Krames Proceedings of the IEEE 101 (10), 2211-2220, 2013	506	2013
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004	504	2004
Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ... Laser & Photonics Reviews 1 (4), 307-333, 2007	478	2007
Ordered interface texturing for a light emitting device MR Krames, FA Kish Jr US Patent 5,779,924, 1998	478	1998
Luminescent ceramic for a light emitting device GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ... US Patent 7,361,938, 2008	457*	2008
High performance thin-film flip-chip InGaN–GaN light-emitting diodes OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ... Applied Physics Letters 89 (7), 2006	431	2006
Phosphor-converted light emitting device WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth US Patent 6,642,652, 2003	429	2003
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 2008	422	2008
III-Phospide and III-Arsenide flip chip light-emitting devices MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ... US Patent 6,784,463, 2004	400	2004
History, development, and applications of high-brightness visible light-emitting diodes RD Dupuis, MR Krames Journal of lightwave technology 26 (9), 1154-1171, 2008	379	2008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth US Patent 6,576,488, 2003	357	2003
High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002	326	2002
Polarized semiconductor light emitting device MH Keuper, MR Krames, GO Mueller US Patent 7,408,201, 2008	320	2008

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