Suivre
Yi Zhang
Yi Zhang
Adresse e-mail validée de eee.hku.hk
Titre
Citée par
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Année
Materials, design, and characteristics of bulk acoustic wave resonator: A review
Y Liu, Y Cai, Y Zhang, A Tovstopyat, S Liu, C Sun
Micromachines 11 (7), 630, 2020
2652020
Surface acoustic wave-based ultraviolet photodetectors: A review
Y Zhang, Y Cai, J Zhou, Y Xie, Q Xu, Y Zou, S Guo, H Xu, C Sun, S Liu
Science Bulletin 65 (7), 587-600, 2020
452020
A High Q Value ScAlN/AlN-Based SAW Resonator for Load Sensing
B Lin, Y Liu, Y Cai, J Zhou, Y Zou, Y Zhang, W Liu, C Sun
IEEE Transactions on Electron Devices 68 (10), 5192-5197, 2021
272021
Spontaneous Threshold Lowering Neuron using Second‐Order Diffusive Memristor for Self‐Adaptive Spatial Attention
Y Jiang, D Wang, N Lin, S Shi, Y Zhang, S Wang, X Chen, H Chen, Y Lin, ...
Advanced Science 10 (22), 2301323, 2023
222023
Convolutional Echo‐State Network with Random Memristors for Spatiotemporal Signal Classification
S Wang, H Chen, W Zhang, Y Li, D Wang, S Shi, Y Zhao, KC Loong, ...
Advanced Intelligent Systems 4 (8), 2200027, 2022
192022
Dual-mode hybrid quasi-SAW/BAW resonators with high effective coupling coefficient
Y Zhang, J Zhou, Y Xie, C Tang, Y Zou, A Tovstopyat, H Yu, C Sun
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 67 …, 2020
192020
A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses
Y Jiang, W Li, F Du, R Sokolovskij, Y Zhang, S Shi, W Huang, Q Wang, ...
Journal of Materials Chemistry C 11 (30), 10121-10148, 2023
172023
Oscillator-network-based ising machine
Y Zhang, Y Deng, Y Lin, Y Jiang, Y Dong, X Chen, G Wang, D Shang, ...
Micromachines 13 (7), 1016, 2022
162022
Lithium niobate thin film based A3 mode resonators with high effective coupling coefficient of 6.72%
Y Zhang, L Wang, Y Zou, Q Xu, J Liu, Q Wang, A Tovstopyat, W Liu, C Sun, ...
2021 IEEE 34th International Conference on Micro Electro Mechanical Systems …, 2021
132021
Investigation of modified Lamé mode resonator with high coupling coefficient
J Zhou, J Liu, Y Zou, Y Cai, Y Zhang, Q Xu, X Tong, A Tovstopyat, S Guo, ...
Journal of Applied Physics 127 (7), 2020
102020
Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity
C Tang, C Fu, Y Jiang, M He, C Deng, K Wen, J He, P Wang, F Du, ...
Applied Physics Letters 123 (9), 2023
52023
Structural plasticity‐based hydrogel optical Willshaw model for one‐shot on‐the‐fly edge learning
D Wang, D Liu, Y Lin, A Yuan, W Zhang, Y Zhao, S Wang, X Chen, ...
InfoMat 5 (4), e12399, 2023
32023
Residual stress analysis and structural parameters optimization of corrugated diaphragms applied to MEMS device
C Tang, L Wang, Y Cai, Y Zhang, Q Wang, C Sun, H Yu
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
32020
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
Y Jiang, FZ Du, KY Wen, JQ He, PR Wang, MJ Li, CY Tang, Y Zhang, ...
Applied Physics Letters 124 (24), 2024
22024
A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs
C Tang, C Fu, F Du, C Deng, Y Jiang, K Wen, Y Zhang, J He, W Li, Q Hu, ...
Journal of Alloys and Compounds 978, 173499, 2024
22024
Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures
Y Zhang, Y Jiang, C Tang, C Deng, F Du, J He, Q Hu, Q Wang, H Yu, ...
Micromachines 15 (2), 195, 2024
22024
In-sensor reservoir computing for gas pattern recognition using Pt-AlGaN/GaN HEMTs
Y Jiang, S Shi, S Wang, F Du, P Wang, N Lin, W Li, Y Zhang, L He, ...
Device 3 (1), 2025
12025
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
C Deng, P Wang, C Tang, Q Hu, F Du, Y Jiang, Y Zhang, M Li, Z Xiong, ...
Nanomaterials 14 (18), 1471, 2024
12024
Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
Y Jiang, FZ Du, KY Wen, Y Zhang, MJ Li, CY Tang, CK Deng, WY Yu, ...
Applied Physics Letters 125 (3), 2024
12024
Investigation on gate etching and stability of GaN p-FETs
C Tang, F Du, C Fu, C Deng, Y Zhang, Y Jiang, W Tao, W Yu, Q Wang, ...
2024 IEEE International Symposium on the Physical and Failure Analysis of …, 2024
12024
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