Roger K. Lake

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Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAAdresse e-mail validée de seas.ucla.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Mahesh NeupaneResearch Scientist, US Army Research LaboratoryAdresse e-mail validée de mail.mil
Darshana WickramaratneNaval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
Fariborz KargarAssistant Professor, Auburn UniversityAdresse e-mail validée de auburn.edu
Yafis BarlasUniversity of Nevada RenoAdresse e-mail validée de unr.edu
Cengiz OzkanProfessor of Mechanical EngineeringAdresse e-mail validée de engr.ucr.edu
Mihri OzkanUniversity of CaliforniaAdresse e-mail validée de ece.ucr.edu
Kang L. WangElectrical Engineering DepartmentAdresse e-mail validée de ee.ucla.edu
Jiadong ZangUniversity of New HampshireAdresse e-mail validée de unh.edu
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ieee.org
Sean RommelProfessor, Rochester Institute of TechnologyAdresse e-mail validée de rit.edu
Supriyo DattaProfessor, Purdue UniversityAdresse e-mail validée de purdue.edu
Alan SeabaughProfessor of Electrical Engineering, University of Notre DameAdresse e-mail validée de nd.edu
K M Masum HabibIntel Corp.Adresse e-mail validée de ee.ucr.edu
Ferdows Zahid (ORCID:0000-0001-93...Independent University, Bangladesh (IUB)Adresse e-mail validée de iub.edu.bd
Timothy BoykinUniversity of Alabama in HuntsvilleAdresse e-mail validée de uah.edu
Junxue LiSouthern University of Science and TechnologyAdresse e-mail validée de sustech.edu.cn
Alexander KhitunUniversity of California RiversideAdresse e-mail validée de engr.ucr.edu
Khalid AshrafFounder at Semion Inc.Adresse e-mail validée de semion.ai

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Roger K. Lake

University of California Riverside

Adresse e-mail validée de ece.ucr.edu - Page d'accueil

Semiconductor Devices semiconductor materials semiconductor physics nanoelectronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997	1039	1997
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ... ACS nano 8 (10), 10743-10755, 2014	565	2014
Electronic and thermoelectric properties of few-layer transition metal dichalcogenides D Wickramaratne, F Zahid, RK Lake The Journal of chemical physics 140 (12), 2014	459	2014
Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes R Lake, S Datta Physical Review B 45 (12), 6670, 1992	341	1992
Thermal percolation threshold and thermal properties of composites with high loading of graphene and boron nitride fillers F Kargar, Z Barani, R Salgado, B Debnath, JS Lewis, E Aytan, RK Lake, ... ACS applied materials & interfaces 10 (43), 37555-37565, 2018	325	2018
Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures N Gillgren, D Wickramaratne, Y Shi, T Espiritu, J Yang, J Hu, J Wei, X Liu, ... 2D Materials 2 (1), 011001, 2014	288	2014
Thermal conductivity of graphene with defects induced by electron beam irradiation H Malekpour, P Ramnani, S Srinivasan, G Balasubramanian, DL Nika, ... Nanoscale 8 (30), 14608-14616, 2016	261	2016
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005	246	2005
A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature G Liu, B Debnath, TR Pope, TT Salguero, RK Lake, AA Balandin Nature nanotechnology 11 (10), 845-850, 2016	237	2016
Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe₂ P Goli, J Khan, D Wickramaratne, RK Lake, AA Balandin Nano letters 12 (11), 5941-5945, 2012	230	2012
MonolayerTransistors Beyond the Technology Road Map K Alam, RK Lake IEEE transactions on electron devices 59 (12), 3250-3254, 2012	211	2012
Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998	209	1998
Quantitative simulation of a resonant tunneling diode RC Bowen, G Klimeck, RK Lake, WR Frensley, T Moise Journal of applied physics 81 (7), 3207-3213, 1997	205	1997
Quantum device simulation with a generalized tunneling formula G Klimeck, R Lake, RC Bowen, WR Frensley, TS Moise Applied physics letters 67 (17), 2539-2541, 1995	179	1995
Binding a Hopfion in Chiral Magnet Nanodisk Y Liu, R Lake, J Zang Phys. Rev. B 98 (17), 174437, 2018	178	2018
Binding a Hopfion in Chiral Magnet Nanodisk Y Liu, R Lake, J Zang arXiv preprint arXiv:1806.01682, 2018	178	2018
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ... Advanced Functional Materials 24 (42), 6629-6638, 2014	173	2014
Spin-phonon coupling in antiferromagnetic nickel oxide E Aytan, B Debnath, F Kargar, Y Barlas, MM Lacerda, JX Li, RK Lake, ... Applied Physics Letters 111 (25), 2017	168	2017
Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands D Wickramaratne, F Zahid, RK Lake Journal of Applied Physics 118 (7), 2015	166	2015
Fundamentals of lateral and vertical heterojunctions of atomically thin materials A Pant, Z Mutlu, D Wickramaratne, H Cai, RK Lake, C Ozkan, S Tongay Nanoscale 8 (7), 3870-3887, 2016	148	2016

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