Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
327 2015 Impact of Temperature on the Resistive Switching Behavior of Embedded C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
297 2011 Model for the Resistive Switching Effect in EA Miranda, C Walczyk, C Wenger, T Schroeder
IEEE Electron Device Letters 31 (6), 609-611, 2010
219 2010 Multilevel HfO2-based RRAM devices for low-power neuromorphic networks V Milo, C Zambelli, P Olivo, E Pérez, M K Mahadevaiah, O G Ossorio, ...
APL materials 7 (8), 2019
195 2019 Filament growth and resistive switching in hafnium oxide memristive devices S Dirkmann, J Kaiser, C Wenger, T Mussenbrock
ACS applied materials & interfaces 10 (17), 14857-14868, 2018
162 2018 Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
140 2009 Magnetic penetration depth and condensate density of cuprate high- C Bernhard, C Niedermayer, U Binninger, A Hofer, C Wenger, JL Tallon, ...
Physical Review B 52 (14), 10488, 1995
136 1995 Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
127 2017 Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
118 2013 Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ...
ACS applied materials & interfaces 12 (9), 10648-10656, 2020
114 2020 Geometric conductive filament confinement by nanotips for resistive switching of HfO2 -RRAM devices with high performance G Niu, P Calka, M Auf der Maur, F Santoni, S Guha, M Fraschke, ...
Scientific reports 6 (1), 25757, 2016
103 2016 Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits V Milo, A Glukhov, E Pérez, C Zambelli, N Lepri, MK Mahadevaiah, ...
IEEE Transactions on Electron Devices 68 (8), 3832-3837, 2021
89 2021 Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2 R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ...
Thin Solid Films 437 (1-2), 248-256, 2003
88 2003 Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
87 2019 Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 2005
86 2005 Electronic properties of graphene/p-silicon Schottky junction G Luongo, A Di Bartolomeo, F Giubileo, CA Chavarin, C Wenger
Journal of Physics D: Applied Physics 51 (25), 255305, 2018
83 2018 Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
82 2011 Interface-engineered reliable HfO 2-based RRAM for synaptic simulation Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ...
Journal of Materials Chemistry C 7 (40), 12682-12687, 2019
77 2019 Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 2008
73 2008 Impact of intercell and intracell variability on forming and switching parameters in RRAM arrays A Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ...
IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015
71 2015