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Lars Voss
Lars Voss
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Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods
LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ...
Applied Physics Letters 87 (22), 2005
3572005
High aspect ratio composite structures with 48.5% thermal neutron detection efficiency
Q Shao, LF Voss, AM Conway, RJ Nikolic, MA Dar, CL Cheung
Applied Physics Letters 102 (6), 2013
782013
Characterization of bulk GaN rectifiers for hydrogen gas sensing
L Voss, BP Gila, SJ Pearton, HT Wang, F Ren
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
492005
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices
LF Voss, K Ip, SJ Pearton, RJ Shul, ME Overberg, AG Baca, C Sanchez, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
352008
Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO
W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren
Applied Surface Science 253 (3), 1269-1273, 2006
322006
A total internal reflection photoconductive switch
M Bora, LF Voss, PV Grivickas, DL Hall, JB Alameda, NJ Kramer, ...
IEEE Electron Device Letters 40 (5), 734-737, 2019
312019
A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes
J Jun, B Chou, J Lin, A Phipps, X Shengwen, K Ngo, D Johnson, ...
Solid-State Electronics 51 (7), 1018-1022, 2007
302007
Photoconductive switch with high sub-bandgap responsivity in nitrogen-doped diamond
DL Hall, LF Voss, P Grivickas, M Bora, AM Conway, P Ščajev, V Grivickas
IEEE Electron Device Letters 41 (7), 1070-1073, 2020
282020
Fabrication methodology of enhanced stability room temperature TlBr gamma detectors
AM Conway, LF Voss, AJ Nelson, PR Beck, TA Laurence, RT Graff, ...
IEEE Transactions on Nuclear Science 60 (2), 1231-1236, 2013
272013
Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources
SK Mazumder, LF Voss, KM Dowling, A Conway, D Hall, RJ Kaplar, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (4 …, 2023
262023
Design considerations for three-dimensional betavoltaics
JW Murphy, LF Voss, CD Frye, Q Shao, K Kazkaz, MA Stoyer, ...
AIP Advances 9 (6), 2019
252019
Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN
LF Voss, L Stafford, R Khanna, BP Gila, CR Abernathy, SJ Pearton, F Ren, ...
Applied physics letters 90 (21), 2007
252007
Ultradeep electron cyclotron resonance plasma etching of GaN
SE Harrison, LF Voss, AM Torres, CD Frye, Q Shao, RJ Nikolić
Journal of Vacuum Science & Technology A 35 (6), 2017
232017
Solution-grown rubrene crystals as radiation detecting devices
L Carman, HP Martinez, L Voss, S Hunter, P Beck, N Zaitseva, SA Payne, ...
IEEE Transactions on Nuclear Science 64 (2), 781-788, 2017
232017
Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries
W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren
Applied Surface Science 253 (2), 889-894, 2006
232006
Stress reduction for pillar filled structures
RJ Nikolic, A Conway, Q Shao, L Voss, CL Cheung, MA Dar
US Patent 9,121,947, 2015
222015
Improved long-term thermal stability of InGaN∕ GaN multiple quantum well light-emitting diodes using TiB2-and Ir-based p-Ohmic contacts
L Stafford, LF Voss, SJ Pearton, HT Wang, F Ren
Applied Physics Letters 90 (24), 2007
212007
Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO
JS Wright, R Khanna, LF Voss, L Stafford, BP Gila, DP Norton, SJ Pearton, ...
Applied surface science 253 (8), 3766-3772, 2007
212007
Improved thermally stable ohmic contacts on p-GaN based on W2B
L Voss, R Khanna, SJ Pearton, F Ren, I Kravchenko
Applied physics letters 88 (1), 2006
212006
Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties
SE Sampayan, PV Grivickas, AM Conway, KC Sampayan, I Booker, ...
Scientific reports 11 (1), 6859, 2021
192021
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