An efficient and reliable solid-state circuit breaker based on mixture device X Xu, W Chen, C Liu, R Sun, Z Li, B Zhang
IEEE Transactions on Power Electronics 36 (9), 9767-9771, 2021
42 2021 Design and experimental verification of an efficient SSCB based on CS-MCT X Xu, W Chen, H Tao, Q Zhou, Z Li, B Zhang
IEEE Transactions on Power Electronics 35 (11), 11682-11693, 2020
37 2020 Electrostatic discharge (ESD) behavior of p-GaN HEMTs Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, X Xu, Q Shi, Y Wang, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
24 2020 A novel thyristor-based bidirectional SSCB with controllable current breaking capability X Xu, W Chen, C Liu, R Sun, F Wang, Z Li, B Zhang
IEEE Transactions on Power Electronics 37 (4), 4526-4534, 2021
23 2021 Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism F Wang, W Chen, X Xu, R Sun, Z Wang, Y Xia, Y Xin, C Liu, Q Zhou, ...
IEEE Transactions on Electron Devices 68 (1), 175-183, 2020
22 2020 Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors F Wang, W Chen, X Li, R Sun, X Xu, Y Xin, Z Wang, Y Shi, Y Xia, C Liu, ...
Journal of Physics D: Applied Physics 53 (30), 305106, 2020
22 2020 A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics C Liu, W Chen, Y Shi, H Tao, Q Zhou, H Zuo, B Qiao, Y Xia, Z Xiao, W Gao, ...
IEEE Transactions on Electron Devices 66 (2), 1018-1025, 2018
21 2018 Design of an isolated circuit breaker with robust interruption capability for DC microgrid protection X Xu, W Chen, S Zhang, Q Zhou, Z Li, B Zhang
IEEE Transactions on Industrial Electronics 68 (12), 12408-12417, 2020
16 2020 Modeling the influence of the acceptor-type trap on the 2DEG density for GaN MIS-HEMTs Y Shi, W Chen, R Sun, C Liu, Y Xin, Y Xia, F Wang, X Xu, X Deng, T Chen, ...
IEEE Transactions on Electron Devices 67 (6), 2290-2296, 2020
13 2020 Design of a reliable bidirectional solid-state circuit breaker for DC microgrids X Xu, J Ye, Y Wang, X Xu, Z Lai, X Wei
IEEE Transactions on Power Electronics 37 (6), 7200-7208, 2021
12 2021 A Novel CSTBT with Hole Barrier for High X Xu, W Chen, C Liu, Y Wang, N Chen, F Wang, Q Shi, K Zhang, Q Zhou, ...
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
12 2019 Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode F Wang, W Chen, Z Wang, R Sun, J Wei, X Li, Y Shi, X Jin, X Xu, N Chen, ...
Superlattices and Microstructures 105, 132-138, 2017
12 2017 Degradation behavior and mechanism of GaN HEMTs with P-type gate in the third quadrant under repetitive surge current stress X Wang, W Chen, R Sun, C Liu, Y Xia, Y Xin, X Xu, F Wang, X Chen, ...
IEEE Transactions on Electron Devices 69 (10), 5733-5741, 2022
11 2022 Numerical analysis for a P-drift region N-IGBT with enhanced dynamic electric field modulation effect X Xu, W Chen, S Zhang, C Liu, R Sun, Z Li, B Zhang
IEEE Transactions on Electron Devices 69 (6), 3277-3282, 2022
11 2022 A novel IGBT with self-regulated potential for extreme low EMI noise X Xu, W Chen, C Liu, N Chen, F Wang, Y Wang, K Zhang, Y Ma, S Zhang, ...
IEEE electron device letters 40 (1), 71-74, 2018
11 2018 An extraction method for the interface acceptor distribution of GaN MOS-HEMT Y Shi, W Chen, R Sun, C Liu, Y Xia, Y Xin, X Xu, F Wang, X Deng, T Chen, ...
IEEE Transactions on Electron Devices 66 (10), 4164-4169, 2019
8 2019 Numerical analysis of an ultralow switching loss IGBT with an inner primary blocking junction Y Xia, W Chen, C Liu, R Sun, X Xu, Z Li, B Zhang
IEEE Transactions on Electron Devices 70 (3), 1211-1218, 2023
6 2023 Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di /dt Condition C Liu, P Xing, S Zhang, W Chen, R Sun, X Xu, Y Xia, Y Xin, Y Shi, Z Li, ...
IEEE Transactions on Electron Devices 70 (2), 640-646, 2023
6 2023 An ultralow loss N-channel RB-IGBT with P-drift region X Xu, W Chen, F Wang, R Sun, C Liu, Y Xia, Y Xin, Q Zhou, Z Li, B Zhang
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
6 2020 Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT F Wang, W Chen, Y Wang, R Sun, G Ding, P Yu, X Wang, Q Feng, W Xu, ...
IEEE Transactions on Electron Devices 71 (3), 1654-1661, 2023
5 2023 
Wanjun ChenUniversity of Elecronic Science and Technology of ChinaAdresse e-mail validée de uestc.edu.cn