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Muhammad Farooq Khan
Muhammad Farooq Khan
Assistant Professor Sejong University, KRISS (Daejeon), Post-Doct (Yonsei University), South Korea
Adresse e-mail validée de sejong.ac.kr - Page d'accueil
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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, JH Park, C Hwang, ...
Scientific reports 5 (1), 10699, 2015
3522015
Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance
HMW Khalil, MF Khan, J Eom, H Noh
ACS applied materials & interfaces 7 (42), 23589-23596, 2015
1662015
Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method
S Hussain, J Singh, D Vikraman, AK Singh, MZ Iqbal, MF Khan, P Kumar, ...
Scientific reports 6 (1), 30791, 2016
1572016
Synthesis and characterization of large-area and continuous MoS 2 atomic layers by RF magnetron sputtering
S Hussain, MA Shehzad, D Vikraman, MF Khan, J Singh, DC Choi, Y Seo, ...
Nanoscale 8 (7), 4340-4347, 2016
1022016
n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration
A Rehman, MF Khan, MA Shehzad, S Hussain, MF Bhopal, SH Lee, ...
ACS applied materials & interfaces 8 (43), 29383-29390, 2016
862016
Synthesis, properties and novel electrocatalytic applications of the 2D-borophene Xenes
K Khan, AK Tareen, M Aslam, MF Khan, Z Shi, C Ma, SS Shams, ...
Progress in Solid State Chemistry 59, 100283, 2020
852020
Room temperature spin valve effect in NiFe/WS2/Co junctions
MZ Iqbal, MW Iqbal, S Siddique, MF Khan, SM Ramay
Scientific reports 6 (1), 21038, 2016
802016
Deep-ultraviolet-light-driven reversible doping of WS 2 field-effect transistors
MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, J Eom
Nanoscale 7 (2), 747-757, 2015
732015
Ultimate limit in size and performance of WSe2 vertical diodes
G Nazir, H Kim, J Kim, KS Kim, DH Shin, MF Khan, DS Lee, JY Hwang, ...
Nature communications 9 (1), 5371, 2018
712018
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode
G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ...
ACS applied materials & interfaces 10 (15), 13150-13157, 2018
712018
Enhanced photoresponse of ZnO quantum dot-decorated MoS 2 thin films
G Nazir, MF Khan, I Akhtar, K Akbar, P Gautam, H Noh, Y Seo, SH Chun, ...
RSC advances 7 (27), 16890-16900, 2017
682017
Improving the electrical properties of graphene layers by chemical doping
MWIJE Muhammad Farooq Khan, Muhammad Zahir Iqbal
Science and Technology of Advanced Materials 15, 2014
682014
Thickness-dependent efficiency of directly grown graphene based solar cells
MA Rehman, SB Roy, I Akhtar, MF Bhopal, W Choi, G Nazir, MF Khan, ...
Carbon 148, 187-195, 2019
622019
Thickness-dependent resistive switching in black phosphorus CBRAM
S Rehman, MF Khan, S Aftab, H Kim, J Eom, D Kim
Journal of Materials Chemistry C 7 (3), 725-732, 2019
602019
MoTe 2 van der Waals homojunction p–n diode with low resistance metal contacts
S Aftab, MF Khan, P Gautam, H Noh, J Eom
Nanoscale 11 (19), 9518-9525, 2019
582019
Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware
M Kim, MA Rehman, D Lee, Y Wang, DH Lim, MF Khan, H Choi, QY Shao, ...
ACS applied materials & interfaces 14 (39), 44561-44571, 2022
552022
Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments
MF Khan, MW Iqbal, MZ Iqbal, MA Shehzad, Y Seo, J Eom
ACS Applied Materials & Interfaces 6 (23), 21645-21651, 2014
522014
Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates
G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ...
ACS applied materials & interfaces 10 (38), 32501-32509, 2018
512018
Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions
MF Khan
Science andTechnology of Advanced Materials, 2016
482016
Tailoring the electrical and photo-electrical properties of a WS 2 field effect transistor by selective n-type chemical doping
MW Iqbal, MZ Iqbal, MF Khan, MA Kamran, A Majid, T Alharbi, J Eom
RSC advances 6 (29), 24675-24682, 2016
482016
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