Robust zero-field skyrmion formation in FeGe epitaxial thin films JC Gallagher, KY Meng, JT Brangham, HL Wang, BD Esser, DW McComb, ...
Physical review letters 118 (2), 027201, 2017
152 2017 Solar-cycle characteristics examined in separate hemispheres: phase, Gnevyshev gap, and length of minimum AA Norton, JC Gallagher
Solar Physics 261, 193-207, 2010
109 2010 GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ...
IEEE Electron Device Letters 40 (6), 881-884, 2019
92 2019 Exceptionally high magnetization of stoichiometric Y3Fe5O12 epitaxial films grown on Gd3Ga5O12 JC Gallagher, AS Yang, JT Brangham, BD Esser, SP White, MR Page, ...
Applied Physics Letters 109 (7), 2016
57 2016 The effect of chemical pressure on the structure and properties of A2CrOsO6 (A= Sr, Ca) ferrimagnetic double perovskite R Morrow, JR Soliz, AJ Hauser, JC Gallagher, MA Susner, MD Sumption, ...
Journal of Solid State Chemistry 238, 46-52, 2016
56 2016 Thickness dependence of spin Hall angle of Au grown on JT Brangham, KY Meng, AS Yang, JC Gallagher, BD Esser, SP White, ...
Physical Review B 94 (5), 054418, 2016
50 2016 Epitaxial growth of iridate pyrochlore Nd2 Ir2 O7 films JC Gallagher, BD Esser, R Morrow, SR Dunsiger, REA Williams, ...
Scientific reports 6 (1), 22282, 2016
49 2016 Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
45 2020 Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD JK Hite, TJ Anderson, LE Luna, JC Gallagher, MA Mastro, JA Freitas, ...
Journal of Crystal Growth 498, 352-356, 2018
44 2018 High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen MJ Tadjer, AD Koehler, JA Freitas, JC Gallagher, MC Specht, ER Glaser, ...
Applied Physics Letters 113 (19), 2018
40 2018 Long range, non-destructive characterization of GaN substrates for power devices JC Gallagher, TJ Anderson, LE Luna, AD Koehler, JK Hite, NA Mahadik, ...
Journal of Crystal Growth 506, 178-184, 2019
33 2019 Structural and electronic properties of Si-and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres MJ Tadjer, JA Freitas, JC Culbertson, MH Weber, ER Glaser, AL Mock, ...
Journal of Physics D: Applied Physics 53 (50), 504002, 2020
32 2020 Room-temperature skyrmions in strain-engineered FeGe thin films S Budhathoki, A Sapkota, KM Law, S Ranjit, B Nepal, BD Hoskins, ...
Physical Review B 101 (22), 220405, 2020
31 2020 Effect of surface morphology on diode performance in vertical GaN Schottky diodes JK Hite, TJ Anderson, MA Mastro, LE Luna, JC Gallagher, RL Myers-Ward, ...
ECS Journal of Solid State Science and Technology 6 (11), S3103, 2017
24 2017 p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 2020
23 2020 Demonstration of CuI as a P–N heterojunction to β-Ga2O3 JC Gallagher, AD Koehler, MJ Tadjer, NA Mahadik, TJ Anderson, ...
Applied Physics Express 12 (10), 104005, 2019
23 2019 Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ...
Applied Physics Letters 117 (8), 2020
22 2020 A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ...
IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022
20 2022 Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
20 2021 Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices H Ahmad, TJ Anderson, JC Gallagher, EA Clinton, Z Engel, CM Matthews, ...
Journal of Applied Physics 127 (21), 2020
19 2020 
Travis J. AndersonUniversity of FloridaAdresse e-mail validée de che.ufl.edu
