| Eu luminescence center created by Mg codoping in Eu-doped GaN D Lee, A Nishikawa, Y Terai, Y Fujiwara Applied Physics Letters 100 (17), 171904, 2012 | 76 | 2012 |
| Method of fabricating light emitting device package JH Yeon, SH Sim, HN Yoo, DG Lee US Patent 10,438,994, 2019 | 56 | 2019 |
| The role of donor-acceptor pairs in the excitation of Eu-ions in GaN: Eu epitaxial layers B Mitchell, J Poplawsky, D Lee, A Koizumi, Y Fujiwara, V Dierolf Journal of Applied Physics 115 (20), 204501, 2014 | 52 | 2014 |
| Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites R Wakamatsu, D Lee, A Koizumi, V Dierolf, Y Fujiwara Journal of Applied Physics 114 (4), 043501, 2013 | 46 | 2013 |
| Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ... Scientific Reports 6, 18808, 2016 | 39 | 2016 |
| Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy T Arai, D Timmerman, R Wakamatsu, D Lee, A Koizumi, Y Fujiwara Journal of Luminescence 158, 70-74, 2015 | 28 | 2015 |
| Effect of thermal annealing on luminescence properties of Eu, Mg-codoped GaN grown by organometallic vapor phase epitaxy D Lee, R Wakamatsu, A Koizumi, Y Terai, JD Poplawsky, V Dierolf, ... Applied Physics Letters 102 (14), 141904, 2013 | 27 | 2013 |
| Chip mounting apparatus and method using the same JS Lee, HK Seong, YI Kim, SH Sim, DG Lee US Patent 10,607,877, 2020 | 26 | 2020 |
| Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe B Mitchell, D Lee, D Lee, A Koizumi, J Poplawsky, Y Fujiwara, V Dierolf Physical Review B 88 (12), 121202, 2013 | 25 | 2013 |
| Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate R Wakamatsu, D Lee, A Koizumi, V Dierolf, Y Terai, Y Fujiwara Japanese Journal of Applied Physics 52 (8S), 08JM03, 2013 | 24 | 2013 |
| Light emitting device package DG Lee, YI Kim, YS Park, JS Lee, WT Lim US Patent 10,763,399, 2020 | 22 | 2020 |
| Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity T Inaba, D Lee, R Wakamatsu, T Kojima, B Mitchell, A Capretti, ... AIP Advances 6 (4), 045105, 2016 | 19 | 2016 |
| Vibrationally induced center reconfiguration in co-doped GaN: Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels B Mitchell, D Lee, D Lee, Y Fujiwara, V Dierolf Applied Physics Letters 103 (24), 242105, 2013 | 19 | 2013 |
| Light emitting device package and display device using the same DG Lee, YI Kim, HS Noh, HK Seong, SH Sim, HN Yoo US Patent 10,566,318, 2020 | 18 | 2020 |
| Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN D Lee, R Wakamatsu, A Koizumi, Y Terai, Y Fujiwara Japanese Journal of Applied Physics 52 (8S), 08JM01, 2013 | 16 | 2013 |
| High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers D Lee, Y Choi, S Jung, Y Kim, SY Park, PJ Choi, S Yoon Applied Physics Letters 124 (12), 2024 | 14 | 2024 |
| Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy A Nishikawa, N Furukawa, D Lee, K Kawabata, T Matsuno, Y Terai, ... MRS Online Proceedings Library 1342 (1), 27-32, 2011 | 14 | 2011 |
| Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy B Mitchell, A Koizumi, T Nunokawa, R Wakamatsu, D Lee, Y Saitoh, ... Materials Chemistry and Physics 193, 140-146, 2017 | 13 | 2017 |
| Nanostructure semiconductor light emitting device JS Kim, YW Seo, DG Lee, BK Chung, DM Chun, SJ Choi US Patent 9,406,839, 2016 | 13 | 2016 |
| Nanostructure semiconductor light emitting device BK Chung, JS Kim, SJ Choi, YW Seo, DG Lee US Patent 9,508,898, 2016 | 11 | 2016 |
Volkmar DierolfLehigh UniversityAdresse e-mail validée de lehigh.edu
