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Cheol Seong Hwang
Cheol Seong Hwang
Professor, Department of Materials Science and Engineering, Seoul National University
Adresse e-mail validée de snu.ac.kr - Page d'accueil
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ...
Nature nanotechnology 5 (2), 148-153, 2010
24152010
Multifunctional wearable devices for diagnosis and therapy of movement disorders
D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ...
Nature nanotechnology 9 (5), 397-404, 2014
15752014
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 2005
14752005
Emerging memories: resistive switching mechanisms and current status
DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ...
Reports on progress in physics 75 (7), 076502, 2012
12462012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
11372015
Resistive switching materials for information processing
Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang
Nature Reviews Materials 5 (3), 173-195, 2020
9892020
Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 2013
8042013
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
KM Kim, DS Jeong, CS Hwang
Nanotechnology 22 (25), 254002, 2011
7632011
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
Mrs Communications 8 (3), 795-808, 2018
5232018
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 2007
5162007
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
4752011
The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity
M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang
Applied Physics Letters 104 (7), 2014
4512014
An artificial nociceptor based on a diffusive memristor
JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ...
Nature communications 9 (1), 417, 2018
4262018
Memristors for energy‐efficient new computing paradigms
DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang
Advanced Electronic Materials 2 (9), 1600090, 2016
4242016
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ...
Advanced Functional Materials 24 (34), 5316-5339, 2014
4202014
Identification of a determining parameter for resistive switching of TiO2 thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 2005
4162005
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition
SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong
Applied Physics Letters 85 (18), 4112-4114, 2004
4122004
The fundamentals and applications of ferroelectric HfO2
U Schroeder, MH Park, T Mikolajick, CS Hwang
Nature Reviews Materials 7 (8), 653-669, 2022
4022022
First-principles study on doping and phase stability of
CK Lee, E Cho, HS Lee, CS Hwang, S Han
Physical Review B—Condensed Matter and Materials Physics 78 (1), 012102, 2008
3982008
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
3682017
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