Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ...
IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019
40 2019 Capacitance–Conductance Spectroscopic Investigation of Interfacial Oxide layer in Ni/4H–SiC (0001) Schottky Diode SK Gupta, B Shankar, WR Taube, J Singh, J Akhtar
Physica B: Condensed Matter 434, 44-50, 2014
39 2014 ESD Reliability of AlGaN/GaN HEMT Technology B Shankar, S Raghavan, M Shrivastava
IEEE Transactions on Electron Devices, doi: 10.1109/TED.2019.2926781, 2019
31 2019 Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions B Shankar, S Raghavan, M Shrivastava
IEEE Transactions on Electron Devices 67 (4), 1567-1574, 2020
25 2020 Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs B Shankar, M Shrivastava
2016 IEEE International Reliability Physics Symposium (IRPS), EL-7-1-EL-7-5, 2016
23 2016 From Wide to Ultrawide-Bandgap Semiconductors for High Power and High Frequency Electronic Devices K Woo, Z Bian, M Noshin, R Perez Martinez, M Malakoutian, B Shankar, ...
Journal of Physics: Materials, 2024
22 2024 Trap-assisted and stress induced safe operating area limits of AlGaN/GaN HEMTs B Shankar, A Soni, S Raghavan, M Shrivastava
IEEE Transactions on Device and Materials Reliability 20 (4), 767-774, 2020
20 2020 First Observations On the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs B Shankar, A Soni, H Chandrasekar, S Raghavan, M Shrivastava
IEEE Transactions on Electron Devices 66 (8), 3433-3440, 2019
19 2019 Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ...
2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017
19 2017 Safe Operating Area of Polarization Super Junction GaN HEMTs And Diodes B Shankar, M Shrivastava
IEEE Transactions on Electron Devices, doi: 10.1109/TED.2019.2933362, 2019
17 2019 On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ...
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017
15 2017 Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ...
2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022
14 2022 Design of Ka-Band Doherty Power Amplifier Using 0.15 μmd GaN on SiC Process Based on Novel Complex Load Modulation X Zhou, S Chowdhury, RP Martinez, B Shankar
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
14 2021 Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions B Shankar, A Soni, M Shrivastava
Transactions on Electron Devices, 10.1109/TED.2020.2981568, 2020
14 2020 High-k Dielectrics Based Field Plate Edge Termination Engineering in 4H-SiC Schottky Diode B Shankar, SK Gupta, WR Taube, J Akhtar
International Journal of Electronics 103 (12), 2064-2074, 2015
14 2015 Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes B Shankar, R Singh, R Sengupta, H Khand, A Soni, SD Gupta, ...
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018 40th …, 2018
10 2018 ESD Behavior of AlGaN/GaN Schottky Diodes B Shankar, SD Gupta, A Soni, S Raghavan, M Shrivastava
IEEE Transactions on Device and Materials Reliability 19 (2), 437-444, 2019
9 2019 Study of Avalanche Behavior in 3 kV GaN Vertical PN Diode Under UIS Stress for Edge-termination Optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022
8 2022 Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications RP Martinez, DJ Munzer, XY Zhou, B Shankar, EM Schmidt, K Wildnauer, ...
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
8 2021 Time Dependent Shift in SOA boundary and Early Breakdown of Epi-Stack in AlGaN/GaN HEMTs Under Fast Cyclic Transient Stress B Shankar, S Shikha, A Singh, J Kumar, A Soni, SD Gupta, S Raghavan, ...
IEEE Transactions on Device and Materials Reliability 20 (3), 562 - 569, 2020
8 2020 
Mayank ShrivastavaIndian Institute of Science BangaloreAdresse e-mail validée de iisc.ac.in