Kelvin H.L. Zhang

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Russell G Egdell or edgell rgProfessor of Inorganic Chemistry, University of OxfordAdresse e-mail validée de chem.ox.ac.uk
Freddy E OropezaIMDEA EnergyAdresse e-mail validée de imdea.org
Andrew T S WeeDepartment of Physics, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Dongchen Qi (祁东晨)Associate Professor of Physics, Queensland University of TechnologyAdresse e-mail validée de qut.edu.au
Judith MacManus-DriscollUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
WEI CHENProfessor, Department of Chemistry, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Scott ChambersPacific Northwest National LaboratoryAdresse e-mail validée de pnnl.gov
Liang QiaoThe University of ManchesterAdresse e-mail validée de manchester.ac.uk
David J. PayneProfessor at Imperial College LondonAdresse e-mail validée de imperial.ac.uk
Vlado LazarovProfessor, University of YorkAdresse e-mail validée de york.ac.uk
Weiqiang LVUniversity of Electronic Science and Technology of ChinaAdresse e-mail validée de uestc.edu.cn
Mark BowdenPacific Northwest National LaboratoryAdresse e-mail validée de pnnl.gov
V. ShutthanandanEMSL, Pacific Northwest National LabAdresse e-mail validée de pnnl.gov
Robert L.Z. HoyeAssociate Professor, University of OxfordAdresse e-mail validée de chem.ox.ac.uk
V.R.DhanakPhysics Department, University of LiverpoolAdresse e-mail validée de liverpool.ac.uk
Xuesen WangNational University of SingaporeAdresse e-mail validée de nus.edu.sg
Peter V. SushkoPhysical & Computational Sciences Directorate, Pacific Northwest National Laboratory (PNNL)Adresse e-mail validée de pnnl.gov
Anna RegoutzUniversity of OxfordAdresse e-mail validée de chem.ox.ac.uk
Aron WalshDepartment of Materials, Imperial College LondonAdresse e-mail validée de imperial.ac.uk
Phil D C KingSchool of Physics and Astronomy, University of St AndrewsAdresse e-mail validée de st-andrews.ac.uk

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Kelvin H.L. Zhang

Xiamen University

Adresse e-mail validée de xmu.edu.cn - Page d'accueil

Wide bandgap semiconductors Solid state physics Photodetector electrocatalysis


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Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ... Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009	538	2009
Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO JB Yi, CC Lim, GZ Xing, HM Fan, LH Van, SL Huang, KS Yang, XL Huang, ... Physical review letters 104 (13), 137201, 2010	511	2010
Recent progress on the electronic structure, defect, and doping properties of Ga2O3 J Zhang, J Shi, DC Qi, L Chen, KHL Zhang APL Materials 8 (2), 020906, 2020	495	2020
P-type transparent conducting oxides KHL Zhang, K Xi, MG Blamire, RG Egdell Journal of Physics: Condensed Matter 28 (38), 383002, 2016	469	2016
Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices J Shi, J Zhang, L Yang, M Qu, DC Qi, KHL Zhang Advanced Materials 33 (50), 2006230, 2021	400	2021
Fundamental Carrier Lifetime Exceeding 1 µs in Cs₂AgBiBr₆ Double Perovskite RLZ Hoye, L Eyre, F Wei, F Brivio, A Sadhanala, S Sun, W Li, KHL Zhang, ... Advanced Materials Interfaces 5 (15), 1800464, 2018	229	2018
Perovskite Sr‐Doped LaCrO3 as a New p‐Type Transparent Conducting Oxide KHL Zhang, Y Du, A Papadogianni, O Bierwagen, S Sallis, LFJ Piper, ... Advanced Materials 27 (35), 5191-5195, 2015	215	2015
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI) RLZ Hoye, LC Lee, RC Kurchin, TN Huq, KHL Zhang, M Sponseller, ... Advanced Materials 29 (36), 1702176, 2017	188	2017
Electronic and transport properties of Li-doped NiO epitaxial thin films JY Zhang, WW Li, RLZ Hoye, JL MacManus-Driscoll, M Budde, ... Journal of Materials Chemistry C 6 (9), 2275-2282, 2018	178	2018
The electronic structure of transition metal oxides for oxygen evolution reaction H Wang, KHL Zhang, JP Hofmann, FE Oropeza Journal of Materials Chemistry A 9 (35), 19465-19488, 2021	165	2021
P-block metal-based (Sn, In, Bi, Pb) electrocatalysts for selective reduction of CO2 to formate Z Yang, FE Oropeza, KHL Zhang Apl Materials 8 (6), 2020	151	2020
Microscopic origin of electron accumulation in In 2 O 3 KHL Zhang, RG Egdell, F Offi, S Iacobucci, L Petaccia, S Gorovikov, ... Physical review letters 110 (5), 056803, 2013	131	2013
A Single‐Step Hydrothermal Route to 3D Hierarchical Cu₂O/CuO/rGO Nanosheets as High‐Performance Anode of Lithium‐Ion Batteries S Wu, G Fu, W Lv, J Wei, W Chen, H Yi, M Gu, X Bai, L Zhu, C Tan, ... Small 14 (5), 1702667, 2018	124	2018
Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities W Li, J Shi, KHL Zhang, JL MacManus-Driscoll Materials Horizons 7 (11), 2832-2859, 2020	123	2020
Embedding ZnSe nanodots in nitrogen-doped hollow carbon architectures for superior lithium storage Z Chen, R Wu, H Wang, KHL Zhang, Y Song, F Wu, F Fang, D Sun Nano Research 11, 966-978, 2018	121	2018
Surface energies control the self-organization of oriented In2O3 nanostructures on cubic zirconia KHL Zhang, A Walsh, CRA Catlow, VK Lazarov, RG Egdell Nano letters 10 (9), 3740-3746, 2010	112	2010
Increased activity in the oxygen evolution reaction by Fe 4+-induced hole states in perovskite La 1− x Sr x FeO 3 Z Shen, Y Zhuang, W Li, X Huang, FE Oropeza, EJM Hensen, ... Journal of Materials Chemistry A 8 (8), 4407-4415, 2020	108	2020
Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga₂O₃ p–n Heterojunction J Zhang, S Han, M Cui, X Xu, W Li, H Xu, C Jin, M Gu, L Chen, KHL Zhang ACS Applied Electronic Materials 2 (2), 456-463, 2020	107	2020
Ni³⁺-Induced Hole States Enhance the Oxygen Evolution Reaction Activity of Ni_xCo_3–xO₄ Electrocatalysts M Cui, X Ding, X Huang, Z Shen, TL Lee, FE Oropeza, JP Hofmann, ... Chemistry of Materials 31 (18), 7618-7625, 2019	98	2019
Hole-induced insulator-to-metal transition in L a 1− x S r x Cr O 3 epitaxial films KHL Zhang, Y Du, PV Sushko, ME Bowden, V Shutthanandan, S Sallis, ... Physical Review B 91 (15), 155129, 2015	98	2015

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