Duk-Hyun Choe

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Kee Joo ChangKorea Advanced Institute of Science and TechnologyAdresse e-mail validée de kaist.ac.kr
Jinseong HeoSamsung Advanced Institute of TechnologyAdresse e-mail validée de samsung.com
young hee leeprofessor of physics, sungkyunkwan universityAdresse e-mail validée de skku.edu
Heejun YangProfessor, KAIST Physics, KoreaAdresse e-mail validée de kaist.ac.kr
Sung Wng KimDepartment of Energy Science, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Taehwan MoonDepartment of Intelligence Semiconductor Engineering, Ajou UniversityAdresse e-mail validée de ajou.ac.kr
Seung Geol NamSamsung Advanced Institue of TechnologyAdresse e-mail validée de samsung.com
Hagyoul BaeJeonbuk National University, EEAdresse e-mail validée de jbnu.ac.kr
Ha-Jun SungSamsung Advanced Institute of TechnologyAdresse e-mail validée de samsung.com
SB Zhang (Shengbai Zhang)Rensselaer Polytechnic InstituteAdresse e-mail validée de rpi.edu
Dong Hoon Keum (금동훈)삼성전기, Samsung Electro-Mechanics CO.LTD, Corporate R&D Institute, Republic of KoreaAdresse e-mail validée de samsung.com
Damien WestResearch Scientist, Rensselaer Polytechnic InstituteAdresse e-mail validée de rpi.edu
Sera KimASML,Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Jiong Zhao(赵炯)HKPUAdresse e-mail validée de polyu.edu.hk
Kazu SuenagaOsaka UniversityAdresse e-mail validée de sanken.osaka-u.ac.jp
Jae-Yeol HwangDepartment of Physics, Pukyong National UniversityAdresse e-mail validée de pknu.ac.kr
Michael AgiorgousisMIT Lincoln LaboratoryAdresse e-mail validée de ll.mit.edu
Sangwook KimSAIT(Samsung Advanced Institute of Technology)Adresse e-mail validée de samsung.com
Toh-Ming LuRensselaer Polytechnic InstituteAdresse e-mail validée de rpi.edu
Michael LuckingNNLAdresse e-mail validée de unnpp.gov

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Duk-Hyun Choe

Samsung Advanced Institute of Technology (SAIT)

Adresse e-mail validée de samsung.com - Page d'accueil

Condensed Matter Physics Materials Science 2D Materials Density Functional Theory Ferroelectrics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Phase patterning for ohmic homojunction contact in MoTe2 S Cho, S Kim, JH Kim, J Zhao, J Seok, DH Keum, J Baik, DH Choe, ... Science 349 (6248), 625-628, 2015	1187	2015
Bandgap opening in few-layered monoclinic MoTe2 DH Keum†, S Cho†, JH Kim, DH Choe, HJ Sung, M Kan, H Kang, ... Nature Physics 11 (6), 482-486, 2015	1053	2015
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics JY Park†, DH Choe†, DH Lee†, GT Yu, K Yang, SH Kim, GH Park, ... Advanced Materials, 2204904, 2022	125	2022
Understanding topological phase transition in monolayer transition metal dichalcogenides DH Choe, HJ Sung, KJ Chang Physical Review B 93 (12), 125109, 2016	118	2016
Long-Range Lattice Engineering of MoTe2 by 2D Electride S Kim, S Song, J Park, HS Yu, S Cho, D Kim, J Baik, DH Choe, KJ Chang, ... Nano Letters 17 (6), 3363, 2017	93	2017
Machine Learning Augmented Discovery of Chalcogenide Double Perovskites for Photovoltaics M L. Agiorgousis, YY Sun, DH Choe, D West, S Zhang Advanced Theory and Simulations 2 (5), 1800173, 2019	81	2019
Traditional Semiconductors in the Two-Dimensional Limit MC Lucking†, W Xie†, DH Choe, D West, TM Lu, SB Zhang Physical Review Letters 120 (8), 086101, 2018	81	2018
Bandgap widening of phase quilted, 2D MoS2 by oxidative intercalation SH Song†, BH Kim†, DH Choe, J Kim, DC Kim, DJ Lee, JM Kim, ... Advanced Materials 27 (20), 3152-3158, 2015	81	2015
Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam, YS Lee, J Heo Materials Today 50, 8-15, 2021	72	2021
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023	70	2023
Carrier multiplication in van der Waals layered transition metal dichalcogenides JH Kim, MR Bergren, JC Park, S Adhikari, M Lorke, T Frauenheim, ... Nature communications 10 (1), 5488, 2019	60	2019
Photoinduced Vacancy Ordering and Phase Transition in MoTe2 C Si, D Choe, W Xie, H Wang, Z Sun, J Bang, S Zhang Nano Letters 19 (6), 3612, 2019	55	2019
Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride S Cho, SH Kang, HS Yu, HW Kim, W Ko, SW Hwang, WH Han, DH Choe, ... 2D Materials 4 (2), 021030, 2017	50	2017
Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance H Bae†, SG Nam†, T Moon, Y Lee, S Jo, DH Choe, S Kim, KH Lee, J Heo 2020 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2020	41	2020
Negative differential capacitance in ultrathin ferroelectric hafnia S Jo†, H Lee†, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics, 1-8, 2023	37	2023
Band Alignment and the Built-in Potential of Solids DH Choe, D West, S Zhang Physical Review Letters 121 (19), 196802, 2018	35	2018
Unveiling the origin of robust ferroelectricity in sub-2 nm hafnium zirconium oxide films H Lee†, DH Choe†, S Jo†, JH Kim, HH Lee, HJ Shin, Y Park, S Kang, ... ACS Applied Materials & Interfaces 13 (30), 36499-36506, 2021	34	2021
Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons DH Choe, J Bang, KJ Chang New Journal of Physics 12 (12), 125005, 2010	31	2010
The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz HJ Sung, DH Choe, KJ Chang New Journal of physics 16 (11), 113055, 2014	28	2014
Universal Conductance Fluctuation in Two-Dimensional Topological Insulators DH Choe, KJ Chang Scientific Reports 5, 10997, 2015	24	2015

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