Suivre
Osama M. Nayfeh
Osama M. Nayfeh
United States Naval Information Warfare Center (NIWC)
Adresse e-mail validée de navy.mil - Page d'accueil
Titre
Citée par
Citée par
Année
Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions
OM Nayfeh, CN Chleirigh, J Hennessy, L Gomez, JL Hoyt, DA Antoniadis
IEEE Electron Device Letters 29 (9), 1074-1077, 2008
3152008
A simple semiempirical short-channel MOSFET current–voltage model continuous across all regions of operation and employing only physical parameters
A Khakifirooz, OM Nayfeh, D Antoniadis
IEEE Transactions on Electron Devices 56 (8), 1674-1680, 2009
3052009
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
DA Antoniadis, I Aberg, CN Chleirigh, OM Nayfeh, A Khakifirooz, JL Hoyt
IBM Journal of Research and Development 50 (4.5), 363-376, 2006
1892006
Strained- Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior
OM Nayfeh, JL Hoyt, DA Antoniadis
IEEE transactions on electron devices 56 (10), 2264-2269, 2009
982009
Thin film silicon nanoparticle UV photodetector
OM Nayfeh, S Rao, A Smith, J Therrien, MH Nayfeh
IEEE photonics technology letters 16 (8), 1927-1929, 2004
932004
Flexible supercapacitor sheets based on hybrid nanocomposite materials
Q Liu, O Nayfeh, MH Nayfeh, ST Yau
Nano Energy 2 (1), 133-137, 2013
842013
Impact of plasma-assisted atomic-layer-deposited gate dielectric on graphene transistors
OM Nayfeh, T Marr, M Dubey
IEEE Electron Device Letters 32 (4), 473-475, 2011
632011
UV photodetectors with thin-film Si nanoparticle active medium
MH Nayfeh, S Rao, OM Nayfeh, A Smith, J Therrien
IEEE Transactions on Nanotechnology 4 (6), 660-668, 2005
552005
Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles
OM Nayfeh, DA Antoniadis, K Mantey, MH Nayfeh
Applied Physics Letters 90 (15), 2007
482007
Graphene transistors on mechanically flexible polyimide incorporating atomic-layer-deposited gate dielectric
OM Nayfeh
IEEE electron device letters 32 (10), 1349-1351, 2011
352011
Quantum computing with photonic/ionic tuning of entanglement
C Newton, O Nayfeh, K Simonsen
US Patent 10,133,986, 2018
342018
Revival of interband crystalline reflectance from nanocrystallites in porous silicon by immersion plating
Z Yamani, A Alaql, J Therrien, O Nayfeh, M Nayfeh
Applied physics letters 74 (23), 3483-3485, 1999
321999
Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films
OM Nayfeh, A Glen Birdwell, C Tan, M Dubey, H Gullapalli, Z Liu, ...
Applied Physics Letters 102 (10), 2013
282013
Radio-frequency transistors using chemical-vapor-deposited monolayer graphene: performance, doping, and transport effects
OM Nayfeh
IEEE transactions on electron devices 58 (9), 2847-2853, 2011
262011
Reconfigurable, tunable quantum qubit circuits with internal, nonvolatile memory
OM Nayfeh, S Dinh, AL de Escobar, K Simonsen, S Naderi
US Patent 9,755,133, 2017
252017
Advanced process flow for quantum memory devices and josephson junctions with heterogeneous integration
OM Nayfeh, S Dinh, AL de Escobar, K Simonsen
US Patent 9,455,391, 2016
242016
Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
MH Nayfeh, OM Nayfeh
US Patent 6,992,298, 2006
242006
Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids
OM Nayfeh, DA Antoniadis, K Mantey, MH Nayfeh
Applied Physics Letters 94 (4), 2009
232009
Measurement of enhanced gate-controlled band-to-band tunneling in highly strained silicon-germanium diodes
OM Nayfeh, CÁNÍ ChlÉirighChleirigh, JL Hoyt, DA Antoniadis
IEEE electron device letters 29 (5), 468-470, 2008
232008
High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces
OM Nayfeh
US Patent 9,190,509, 2015
222015
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20