Metallic and dielectric metasurfaces in photoconductive terahertz devices: a review AE Yachmenev, DV Lavrukhin, IA Glinskiy, NV Zenchenko, YG Goncharov, ... Optical Engineering 59 (6), 061608-061608, 2020 | 96 | 2020 |
Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology AE Yachmenev, SS Pushkarev, RR Reznik, RA Khabibullin, ... Progress in Crystal Growth and Characterization of Materials 66 (2), 100485, 2020 | 81 | 2020 |
Terahertz photoconductive emitter with dielectric-embedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps DV Lavrukhin, AE Yachmenev, IA Glinskiy, RA Khabibullin, ... AIP Advances 9 (1), 2019 | 70 | 2019 |
Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation DV Lavrukhin, AE Yachmenev, AY Pavlov, RA Khabibullin, YG Goncharov, ... Semiconductor science and Technology 34 (3), 034005, 2019 | 66 | 2019 |
Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts VA Kulbachinskii, NA Yuzeeva, GB Galiev, EA Klimov, IS Vasil’evskii, ... Semiconductor science and technology 27 (3), 035021, 2012 | 53 | 2012 |
Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices DS Ponomarev, A Gorodetsky, AE Yachmenev, SS Pushkarev, ... Journal of Applied Physics 125 (15), 2019 | 52 | 2019 |
Plasmonic nanojet: an experimental demonstration IV Minin, OV Minin, IA Glinskiy, RA Khabibullin, R Malureanu, ... Optics Letters 45 (12), 3244-3247, 2020 | 42 | 2020 |
HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equation method D Ushakov, A Afonenko, R Khabibullin, D Ponomarev, V Aleshkin, ... Optics Express 28 (17), 25371-25382, 2020 | 39 | 2020 |
Experimental verification of a plasmonic hook in a dielectric Janus particle IV Minin, OV Minin, IA Glinskiy, RA Khabibullin, R Malureanu, ... Applied Physics Letters 118 (13), 2021 | 29 | 2021 |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures RA Khabibullin, NV Shchavruk, AY Pavlov, DS Ponomarev, KN Tomosh, ... Semiconductors 50, 1377-1382, 2016 | 29 | 2016 |
MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs … DV Lavrukhin, AE Yachmenev, RR Galiev, RA Khabibullin, ... Semiconductors 48, 69-72, 2014 | 29 | 2014 |
Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review AE Yachmenev, RA Khabibullin, DS Ponomarev Journal of Physics D: Applied Physics 55 (19), 193001, 2022 | 27 | 2022 |
The operation of THz quantum cascade laser in the region of negative differential resistance RA Khabibullin, NV Shchavruk, DS Ponomarev, DV Ushakov, ... Opto-Electronics Review 27 (4), 329-333, 2019 | 26 | 2019 |
Mode loss spectra in THz quantum-cascade lasers with gold-and silver-based double metal waveguides DV Ushakov, AA Afonenko, AA Dubinov, VI Gavrilenko, IS Vasil’evskii, ... Quantum Electronics 48 (11), 1005, 2018 | 26 | 2018 |
Terahertz radiation generation in multilayer quantum-cascade heterostructures AV Ikonnikov, KV Marem’yanin, SV Morozov, VI Gavrilenko, AY Pavlov, ... Technical Physics Letters 43, 362-365, 2017 | 26 | 2017 |
Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures RA Khabibullin, IS Vasil’evskii, GB Galiev, EA Klimov, DS Ponomarev, ... Semiconductors 45, 657-662, 2011 | 26 | 2011 |
Strain-induced InGaAs-based photoconductive terahertz antenna detector DV Lavrukhin, AE Yachmenev, YG Goncharov, KI Zaytsev, RA Khabibullin, ... IEEE Transactions on Terahertz Science and Technology 11 (4), 417-424, 2021 | 24 | 2021 |
Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs DS Ponomarev, DV Lavrukhin, AE Yachmenev, RA Khabibullin, ... Journal of Physics D: Applied Physics 51 (13), 135101, 2018 | 24 | 2018 |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation DS Ponomarev, RA Khabibullin, AE Yachmenev, PP Maltsev, ... Semiconductors 51, 509-513, 2017 | 24 | 2017 |
Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts DS Ponomarev, IS Vasil’Evskii, GB Galiev, EA Klimov, RA Khabibullin, ... Semiconductors 46, 484-490, 2012 | 24 | 2012 |