| 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang Applied Physics Letters 112 (1), 2018 | 77 | 2018 |
| Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, J Verma, HG Xing, D Jena, J Zhang Applied physics letters 110 (7), 2017 | 61 | 2017 |
| Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes M Hartensveld, G Ouin, C Liu, J Zhang Journal of Applied Physics 126 (18), 2019 | 52 | 2019 |
| Analysis of polarization-dependent light extraction and effect of passivation layer for 230-nm AlGaN nanowire light-emitting diodes YK Ooi, C Liu, J Zhang IEEE Photonics Journal 9 (4), 1-12, 2017 | 48 | 2017 |
| Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers C Liu, YK Ooi, J Zhang Journal of Applied Physics 119 (8), 2016 | 24 | 2016 |
| AlGaN-delta-GaN quantum well for DUV LEDs C Liu, B Melanson, J Zhang Photonics 7 (4), 87, 2020 | 20 | 2020 |
| Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters C Liu, J Zhang AIP Advances 8 (8), 2018 | 12 | 2018 |
| Realization of electrically driven AlGaN micropillar array deep-ultraviolet light emitting diodes at 286 nm B Melanson, M Hartensveld, C Liu, J Zhang AIP Advances 11 (9), 2021 | 10 | 2021 |
| Analysis of InGaN-delta-InN quantum wells on InGaN substrates for red light emitting diodes and lasers B Melanson, C Liu, J Zhang IEEE Photonics Journal 13 (1), 1-10, 2021 | 10 | 2021 |
| Proposal and realization of vertical GaN nanowire static induction transistor M Hartensveld, C Liu, J Zhang IEEE Electron Device Letters 40 (2), 259-262, 2018 | 9 | 2018 |
| AlGaN nanowires with inverse taper for flexible DUV emitters M Hartensveld, B Melanson, C Liu, J Zhang Journal of Physics: Photonics 3 (2), 024016, 2021 | 8 | 2021 |
| High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm C Liu, K Lee, G Harden, A Hoffman, H Xing, D Jena, J Zhang CLEO:Ultraviolet to Green Wavelength Semiconductor Devices, AF1I.2, 2020 | 6 | 2020 |
| Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate C Liu, J Zhang Journal of Applied Physics 127 (20), 2020 | 4 | 2020 |
| Polarization Engineering for Deep-Ultraviolet Light-Emitting Diodes C Liu Rochester Institute of Technology, 2020 | 3 | 2020 |
| Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light emitting diodes C Liu, K Lee, SM Islam, H Xing, D Jena, J Zhang Gallium Nitride Materials and Devices XIII 10532, 40-47, 2018 | 3 | 2018 |
| MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity G Wang, Y Li, J Kirch, Y Han, J Chen, S Marks, S Mukhopadhyay, R Liu, ... Crystals 13 (3), 446, 2023 | 2 | 2023 |
| Demonstration of flexible DUV light emitting diodes through formation of nanowires with inverse-taper B Melanson, M Hartensveld, C Liu, J Zhang 2021 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2021 | 2 | 2021 |
| Enhancement of light extraction efficiency of 280-nm UV LEDs using SiO2 microsphere and microlens arrays B Melanson, C Liu, J Zhang Gallium Nitride Materials and Devices XV 11280, 124-132, 2020 | 2 | 2020 |
| Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array C Liu, B Melanson, YK Ooi, M Hartensveld, J Zhang Gallium Nitride Materials and Devices XIV 10918, 39-44, 2019 | 2 | 2019 |
| Integration of 3D printed lens with InGaN light-emitting diodes with enhanced light extraction efficiency YK Ooi, C Ugras, C Liu, M Hartensveld, S Gandhi, D Cormier, J Zhang Advanced Fabrication Technologies for Micro/Nano Optics and Photonics X …, 2017 | 2 | 2017 |
Jing ZhangAssociate Professor, Rochester Institute of TechnologyAdresse e-mail validée de rit.edu