Ayush Pandey

Citée par

	Toutes	Depuis 2020
Citations	1275	1249
indice h	23	23
indice i10	31	30

420

210

105

315

201920202021202220232024202518 101 161 207 294 405 79

Accès public

Tout afficher

21 articles

3 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Zetian MiUniversity of Michigan, Ann ArborAdresse e-mail validée de umich.edu
Ping WangPeking UniversityAdresse e-mail validée de pku.edu.cn
Xianhe LiuDepartment of Electrical and Computer Engineering, McGill UniversityAdresse e-mail validée de mail.mcgill.ca
Yuanpeng WuDepartment of Electrical Engineering and Computer Science, University of Michigan-Ann ArborAdresse e-mail validée de umich.edu
David Arto LaleyanNS NanotechAdresse e-mail validée de umich.edu
Yi SunJoint Quantum Institute (JQI), NIST|UMDAdresse e-mail validée de nist.gov
Yakshita MalhotraUniversity of MichiganAdresse e-mail validée de umich.edu
Kai SunDepartment of Materials Science and Engineering, University of MichiganAdresse e-mail validée de umich.edu
Robert HovdenUniversity of MichiganAdresse e-mail validée de cornell.edu
Jiseok GimIntel CorporationAdresse e-mail validée de umich.edu
Jungwook MinAssistant Professor, Kumoh National Institute of Technology (KIT)Adresse e-mail validée de kumoh.ac.kr
Reddeppa MaddakaDepartment of Electrical Engineering, University of Notre Dame, Indiana, United StatesAdresse e-mail validée de nd.edu
Emmanouil KioupakisProfessor and Karl F. and Patricia J. Betz Family Scholar, University of MichiganAdresse e-mail validée de umich.edu
Eric ReidGraduate Student, University of MichiganAdresse e-mail validée de umich.edu
Anthony AielloUniversity of MichiganAdresse e-mail validée de umich.edu
Zihao DengUniversity of MichiganAdresse e-mail validée de umich.edu
Ishtiaque Ahmed NavidElectrical and Computer Engineering, University of MichiganAdresse e-mail validée de umich.edu
Mackillo KiraHelsinki, Marburg, Stockholm, MichiganAdresse e-mail validée de umich.edu
Jiangnan LiuUniversity of MichiganAdresse e-mail validée de umich.edu
Gianluigi BottonMcMaster UniversityAdresse e-mail validée de mcmaster.ca

Suivre

Ayush Pandey

Department of Electrical Engineering and Computer Science, University of Michigan

Adresse e-mail validée de umich.edu

Semiconductors Nitrides Optoelectronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes A Pandey, WJ Shin, J Gim, R Hovden, Z Mi Photonics Research 8 (3), 331-337, 2020	95	2020
Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi Applied Physics Letters 116 (15), 2020	87	2020
InGaN/Si double-junction photocathode for unassisted solar water splitting S Vanka, B Zhou, RA Awni, Z Song, FA Chowdhury, X Liu, H Hajibabaei, ... ACS Energy Letters 5 (12), 3741-3751, 2020	76	2020
The micro-LED roadmap: status quo and prospects CC Lin, YR Wu, HC Kuo, MS Wong, SP DenBaars, S Nakamura, ... Journal of Physics: Photonics 5 (4), 042502, 2023	70	2023
Direct Deposition of Crystalline Ta₃N₅ Thin Films on FTO for PEC Water Splitting H Hajibabaei, DJ Little, A Pandey, D Wang, Z Mi, TW Hamann ACS applied materials & interfaces 11 (17), 15457-15466, 2019	59	2019
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs A Pandey, Y Malhotra, P Wang, K Sun, X Liu, Z Mi Photonics Research 10 (4), 1107-1116, 2022	51	2022
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis Y Wu, X Liu, A Pandey, P Zhou, WJ Dong, P Wang, J Min, P Deotare, ... Progress in Quantum Electronics 85, 100401, 2022	49	2022
A red-emitting micrometer scale LED with external quantum efficiency> 8% A Pandey, Y Xiao, M Reddeppa, Y Malhotra, J Liu, J Min, Y Wu, Z Mi Applied Physics Letters 122 (15), 2023	45	2023
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering Y Wu, Y Xiao, I Navid, K Sun, Y Malhotra, P Wang, D Wang, Y Xu, ... Light: Science & Applications 11 (1), 294, 2022	45	2022
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs X Liu, Y Sun, Y Malhotra, A Pandey, P Wang, Y Wu, K Sun, Z Mi Photonics Research 10 (2), 587-593, 2022	45	2022
Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ... Optics letters 44 (23), 5679-5682, 2019	45	2019
Deep ultraviolet luminescence due to extreme confinement in monolayer GaN/Al (Ga) N nanowire and planar heterostructures A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ... Nano letters 19 (11), 7852-7858, 2019	45	2019
An ultrahigh efficiency excitonic micro-LED A Pandey, J Min, M Reddeppa, Y Malhotra, Y Xiao, Y Wu, K Sun, Z Mi Nano Letters 23 (5), 1680-1687, 2023	43	2023
Effect of electron blocking layer on the efficiency of AlGaN mid-ultraviolet light emitting diodes A Pandey, WJ Shin, X Liu, Z Mi Optics express 27 (12), A738-A745, 2019	43	2019
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy A Pandey, X Liu, Z Deng, WJ Shin, DA Laleyan, K Mashooq, ET Reid, ... Physical Review Materials 3 (5), 053401, 2019	39	2019
Oxygen defect dominated photoluminescence emission of ScxAl1− xN grown by molecular beam epitaxy P Wang, B Wang, DA Laleyan, A Pandey, Y Wu, Y Sun, X Liu, Z Deng, ... Applied Physics Letters 118 (3), 2021	35	2021
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ... Applied Physics Letters 116 (17), 2020	35	2020
An AlGaN tunnel junction light emitting diode operating at 255 nm A Pandey, J Gim, R Hovden, Z Mi Applied Physics Letters 117 (24), 2020	34	2020
Controlling defect formation of nanoscale AlN: toward efficient current conduction of ultrawide‐bandgap semiconductors Y Wu, DA Laleyan, Z Deng, C Ahn, AF Aiello, A Pandey, X Liu, P Wang, ... Advanced Electronic Materials 6 (9), 2000337, 2020	34	2020
Scalable synthesis of monolayer hexagonal boron nitride on graphene with giant bandgap renormalization P Wang, W Lee, JP Corbett, WH Koll, NM Vu, DA Laleyan, Q Wen, Y Wu, ... Advanced materials 34 (21), 2201387, 2022	33	2022

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs