| Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD … M Kumar, S Haldar, M Gupta, RS Gupta Microelectronics journal 45 (11), 1508-1514, 2014 | 87 | 2014 |
| Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species Y Pratap, M Kumar, S Kabra, S Haldar, RS Gupta, M Gupta Journal of Computational Electronics 17, 288-296, 2018 | 79 | 2018 |
| Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG) N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016 | 49 | 2016 |
| Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack M Kumar, S Haldar, M Gupta, RS Gupta Superlattices and Microstructures 90, 215-226, 2016 | 38 | 2016 |
| Series resistance reduction with linearity assessment for vertically stacked junctionless accumulation mode nanowire FET AK Bansal, M Kumar, C Gupta, TB Hook, A Dixit IEEE Transactions on Electron Devices 65 (8), 3548-3554, 2018 | 28 | 2018 |
| Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta Applied Physics A 123, 1-7, 2017 | 23 | 2017 |
| Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta Superlattices and Microstructures 100, 1263-1275, 2016 | 18 | 2016 |
| Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs M Kumar, S Haldar, M Gupta, RS Gupta Semiconductor Science and Technology 31 (10), 105013, 2016 | 17 | 2016 |
| Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection Y Pratap, M Kumar, M Gupta, S Haldar, RS Gupta, SS Deswal 2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016 | 17 | 2016 |
| A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications M Kumar, S Haldar, M Gupta, RS Gupta Solid-state electronics 101, 13-17, 2014 | 16 | 2014 |
| A junctionless accumulation mode NC-FinFET gate underlap design for improved stability and self-heating reduction M Kumar, K Aditya, A Dixit IEEE Transactions on Electron Devices 67 (8), 3424-3430, 2020 | 15 | 2020 |
| SOI Schottky barrier nanowire MOSFET with reduced ambipolarity and enhanced electrostatic integrity A Saxena, M Kumar, RK Sharma, RS Gupta Journal of Electronic Materials 49, 4450-4456, 2020 | 13 | 2020 |
| Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach M Kumar, Y Pratap, S Haldar, M Gupta, RS Gupta Journal of Semiconductors 38 (12), 124002, 2017 | 13 | 2017 |
| Assessment of analog RF performance for insulated shallow extension (ISE) cylindrical surrounding gate (CSG) MOSFET incorporating gate stack N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta Microsystem Technologies 25, 1547-1554, 2019 | 10 | 2019 |
| Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk N-channel FinFETs K Aditya, R Singh, M Kumar, R Vega, A Dixit IEEE Transactions on Device and Materials Reliability 20 (4), 760-766, 2020 | 8 | 2020 |
| Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability M Kumar, S Haldar, M Gupta, RS Gupta Superlattices and Microstructures 111, 10-22, 2017 | 8 | 2017 |
| A comparative assessment of Schottky-Barrier Source/Drain GAA MOSFET with conventional and junctionless GAA MOSFETs M Kumar, RS Gupta, S Haldar, M Gupta 2013 Annual IEEE India Conference (INDICON), 1-6, 2013 | 6 | 2013 |
| Effect of post radiation annealing on the TID response of 0.18 μm bulk NFETs K Aditya, M Kumar, CK Jha, R Singh, P Yogi, S Basra, HS Jatana, A Dixit 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 336-338, 2019 | 5 | 2019 |
| Asymmetrie vacuum gate dielectric schottky barrier gate all around MOSFET for ambipolarity reduction and improved hot carrier reliability M Kumar, M Gupta, S Haldar, RS Gupta 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 5 | 2015 |
| Design of First Order Active Low Pass Filter using 22nm Gate All Around Silicon-on-Insulator Schottky Barrier MOSFET A Saxena, M Kumar, RK Sharma, RS Gupta 2021 International Conference on Industrial Electronics Research and …, 2021 | 4 | 2021 |
Abhisek DixitNXP Chair Professor, Electrical Engineering, IIT Delhi, New Delhi, IndiaAdresse e-mail validée de ee.iitd.ac.in