Theresia Knobloch

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Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEAdresse e-mail validée de iue.tuwien.ac.at
Yury Illarionov (Юрий Юрьевич Илла...Southern University of Science and Technology (SUSTech)Adresse e-mail validée de sustech.edu.cn
Michael WaltlFull Professor at TU Wien, Vienna, AustriaAdresse e-mail validée de iue.tuwien.ac.at
Thomas MuellerVienna University of TechnologyAdresse e-mail validée de tuwien.ac.at
Gerhard RzepaGlobal TCAD SolutionsAdresse e-mail validée de globaltcad.com
Mario LanzaIEEE Fellow | Associate Professor at National University of SingaporeAdresse e-mail validée de kaust.edu.sa
Nikolai SokolovLeader of research group at Ioffe Institute of Russian Academy of SciencesAdresse e-mail validée de fl.ioffe.ru
Dominic WaldhörPostdoctoral Researcher, Institute for Microelectronics, TU WienAdresse e-mail validée de iue.tuwien.ac.at
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHAdresse e-mail validée de eld.rwth-aachen.de
Dmitry PolyushkinPhotonics Institute, TU WienAdresse e-mail validée de tuwien.ac.at
Ben KaczerimecAdresse e-mail validée de imec.be
Alexander Grillprinciple researcher, imecAdresse e-mail validée de imec.be
Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACAdresse e-mail validée de stanford.edu
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Saptarshi DasAckley Professor of Engineering, Pennsylvania State UniversityAdresse e-mail validée de psu.edu
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowAdresse e-mail validée de ece.utexas.edu
Mathieu LuisierETH ZurichAdresse e-mail validée de iis.ee.ethz.ch
Zhihong ChenPurdue UniversityAdresse e-mail validée de purdue.edu
Uygar E. AvciComponents Research, Intel Corp.Adresse e-mail validée de intel.com
Burkay UzluResearch Scientist, RWTH UniversityAdresse e-mail validée de amo.de

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Theresia Knobloch

Researcher, TU Wien

Adresse e-mail validée de iue.tuwien.ac.at - Page d'accueil

Nanoelectronics Defects 2D Materials Device Modeling Reliability


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021	649	2021
Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020	428	2020
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021	287	2021
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019	252	2019
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016	241	2016
Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018	192	2018
Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser IEEE Electron Device Letters 38 (12), 1763-1766, 2017	121	2017
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ... Nature Electronics 5 (6), 356-366, 2022	82	2022
Characterization of Single Defects in Ultrascaled MoS₂ Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018	78	2018
Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017	75	2017
Highly-stable black phosphorus field-effect transistors with low density of oxide traps YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ... npj 2D Materials and Applications 1 (1), 23, 2017	68	2017
A Physical Model for the Hysteresis in MoS₂ Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018	67	2018
Dielectric Properties of Ultrathin CaF₂ Ionic Crystals C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ... Advanced Materials 32 (34), 2002525, 2020	63	2020
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... 2D Materials 6 (4), 045004, 2019	44	2019
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ... Advanced Materials 34 (48), 2201082, 2022	40	2022
Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire M Gillinger, K Shaposhnikov, T Knobloch, M Schneider, M Kaltenbacher, ... Applied physics letters 108 (23), 2016	40	2016
Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide X Song, F Hui, T Knobloch, B Wang, Z Fan, T Grasser, X Jing, Y Shi, ... Applied Physics Letters 111 (8), 2017	35	2017
Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017	34	2017
Challenges for nanoscale CMOS logic based on two-dimensional materials T Knobloch, S Selberherr, T Grasser Nanomaterials 12 (20), 3548, 2022	29	2022
Incorporating Niobium in MoS₂ at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ... Advanced Materials Interfaces 6 (22), 1901055, 2019	24	2019

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