Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures J Chen, M Zhu, X Lu, X Zou
Applied Physics Letters 116 (6), 2020
24 2020 Temperature-dependent dynamic degradation of carbon-doped GaN HEMTs Y Gu, Y Wang, J Chen, B Chen, M Wang, X Zou
IEEE Transactions on Electron Devices 68 (7), 3290-3295, 2021
20 2021 Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy J Chen, W Huang, H Qu, Y Zhang, J Zhou, B Chen, X Zou
Applied Physics Letters 120 (21), 2022
18 2022 Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy J Chen, H Luo, HL Qu, M Zhu, H Guo, B Chen, Y Lv, X Lu, X Zou
Semiconductor Science and Technology 36 (5), 055015, 2021
14 2021 Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes M Zhu, Y Ren, L Zhou, J Chen, H Guo, L Zhu, B Chen, L Chen, X Lu, ...
Microelectronics Reliability 125, 114345, 2021
12 2021 Forward conduction instability of quasi-vertical GaN pin diodes on Si substrates Y Zhang, X Zhang, M Zhu, J Chen, CW Tang, KM Lau, X Zou
IEEE Transactions on Electron Devices 67 (10), 3992-3998, 2020
11 2020 Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review X Zou, J Yang, Q Qiao, X Zou, J Chen, Y Shi, K Ren
Micromachines 14 (11), 2044, 2023
5 2023 Emission and capture characteristics of electron trap (E emi= 0.8 eV) in Si-doped β-Ga2O3 epilayer H Qu, J Chen, Y Zhang, J Sui, Y Gu, Y Deng, D Su, R Zhang, X Lu, X Zou
Semiconductor Science and Technology 38 (1), 015001, 2022
5 2022 Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures H Qu, W Huang, Y Zhang, J Sui, J Chen, B Chen, DW Zhang, Y Wang, ...
Journal of Vacuum Science & Technology A 42 (2), 2024
3 2024 Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors J Chen, H Qu, J Sui, X Lu, X Zou
Journal of Applied Physics 135 (8), 2024
3 2024 Radiation effects of high-fluence reactor neutron on Ni/β-Ga2O3 Schottky barrier diodes L Zhou, H Chen, T Xu, J Ruan, Y Lai, Y Deng, J Chen, X Zou, X Lu, ...
Applied Physics Letters 124 (1), 2024
3 2024 High-speed Ge-on-GaAs photodetector L Li, R Pan, Z Xie, Y Lu, J Chen, X Zou, Z Yuan, M Chang, H Lu, B Chen
Optics Express 30 (12), 20684-20696, 2022
3 2022 AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing J Chen, H Du, H Qu, H Gao, Y Gu, Y Zhu, W Ye, J Zou, H Wang, X Zou
APL Machine Learning 2 (2), 2024
2 2024 Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy J Sui, J Chen, H Qu, Y Zhang, X Lu, X Zou
Journal of Semiconductors 45, -1--6, 2024
2 2024 Investigation of minority carrier trap in NiO/β -Ga2 O3 p -n heterojunction via deep level transient spectroscopy H Qu, J Chen, Y Zhang, J Sui, R Zhang, J Zhou, X Lu, X Zou
Semiconductor Science and Technology, 2023
2 2023 Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode H Qu, W Huang, Y Zhang, J Sui, G Yang, J Chen, DW Zhang, Y Wang, ...
Materials Science in Semiconductor Processing 187, 109121, 2025
2025 GaN Nanowire nin Diode Enabled High-performance UV Machine Vision System H Du, Y Zhang, J Zhou, J Chen, W Ye, X Zhang, Q Lyu, H Wang, KM Lau, ...
IEEE Transactions on Nanotechnology, 2024
2024 Small Y Zhang, Y Gu, J Chen, Y Zhu, B Chen, H Jiang, KM Lau, X Zou
IEEE Transactions on Electron Devices, 2023
2023 Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes J Sui, J Chen, H Qu, R Zhang, M Zhu, X Lu, X Zou
2023 China Semiconductor Technology International Conference (CSTIC), 1-3, 2023
2023 Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown on Si Substrate J Chen, H Qu, L Qi, Y Liu, X Zhang, KM Lau, X Zou
Asia Communications and Photonics Conference, T4A. 220, 2021
2021 