Shuyun Zhou

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Wenhui DuanTsinghua University, Beijing, ChinaAdresse e-mail validée de tsinghua.edu.cn
Alexei FedorovLawrence Berkeley National LabAdresse e-mail validée de lbl.gov
Changhua BaoUniversität RegensburgAdresse e-mail validée de physik.uni-regensburg.de
Yang Wu (吴扬)College of Math and Physics, BUCTAdresse e-mail validée de buct.edu.cn
Hongyun ZhangDepartment of physics, Tsinghua UniversityAdresse e-mail validée de mails.tsinghua.edu.cn
Ke DengSouthern University of Science and TechnologyAdresse e-mail validée de lbl.gov
Pu YuTsinghua UniversityAdresse e-mail validée de tsinghua.edu.cn
Eryin wangMax Planck Institute for the Structure and Dynamics of MatterAdresse e-mail validée de mpsd.mpg.de
Hong YaoProfessor, Institute for Advanced Study, Tsinghua UniversityAdresse e-mail validée de tsinghua.edu.cn
Huaqing HuangSchool of Physics, Peking UniversityAdresse e-mail validée de pku.edu.cn
Haoyuan ZhongTsinghua Univ.Adresse e-mail validée de mails.tsinghua.edu.cn
Dong SunProfessor of Peking UniversityAdresse e-mail validée de pku.edu.cn
Guangyu ZhangInstitute of Physics, CASAdresse e-mail validée de aphy.iphy.ac.cn
Jonathan DenlingerAdvanced Light Source, Lawrence Berkeley National LaboratoryAdresse e-mail validée de lbl.gov
Antonio H. Castro NetoInstitute for Functional Intelligent Materials and Centre for Advanced 2D MaterialsAdresse e-mail validée de nus.edu.sg
Peizhe TangProfessor, Beihang UniversityAdresse e-mail validée de buaa.edu.cn
Francisco GuineaSenior Researcher, Imdea NanoscienceAdresse e-mail validée de imdea.org
Maria C. AsensioProfessor, at Materials Science Institute of Madrid (ICMM) of the CSICAdresse e-mail validée de csic.es
Chris JozwiakStaff Scientist, Lawrence Berkeley National LabAdresse e-mail validée de lbl.gov
Yeliang WangBeijing Institute of TechnologyAdresse e-mail validée de bit.edu.cn

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Shuyun Zhou

Professor, Department of Physics, Tsinghua University

Adresse e-mail validée de mail.tsinghua.edu.cn - Page d'accueil

Angle-resolved photoemission (ARPES)Spin-ARPES Time-resolved ARPES two dimensional materials and


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Substrate-induced bandgap opening in epitaxial graphene SY Zhou, GH Gweon, AV Fedorov, PN First, WA De Heer, DH Lee, ... Nature materials 6 (10), 770-775, 2007	2937	2007
Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe₂ K Deng, G Wan, P Deng, K Zhang, S Ding, E Wang, M Yan, H Huang, ... Nature Physics 12 (12), 1105-1110, 2016	852	2016
Electric-field control of tri-state phase transformation with a selective dual-ion switch N Lu, P Zhang, Q Zhang, R Qiao, Q He, HB Li, Y Wang, J Guo, D Zhang, ... Nature 546 (7656), 124-128, 2017	721	2017
Monolayer PtSe₂, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ... Nano letters 15 (6), 4013-4018, 2015	718	2015
First direct observation of Dirac fermions in graphite SY Zhou, GH Gweon, J Graf, AV Fedorov, CD Spataru, RD Diehl, ... Nature physics 2 (9), 595-599, 2006	716	2006
Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate E Rollings, GH Gweon, SY Zhou, BS Mun, JL McChesney, BS Hussain, ... Journal of Physics and Chemistry of Solids 67 (9-10), 2172-2177, 2006	631	2006
Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS₂ Continuous Films H Yu, M Liao, W Zhao, G Liu, XJ Zhou, Z Wei, X Xu, K Liu, Z Hu, K Deng, ... ACS nano 11 (12), 12001-12007, 2017	524	2017
Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe₂ M Yan, H Huang, K Zhang, E Wang, W Yao, K Deng, G Wan, H Zhang, ... Nature Communications 8 (1), 257, 2017	455	2017
Type-II Dirac fermions in the class of transition metal dichalcogenides H Huang, S Zhou, W Duan Physical Review B 94 (12), 121117, 2016	408	2016
An unusual isotope effect in a high-transition-temperature superconductor GH Gweon, T Sasagawa, SY Zhou, J Graf, H Takagi, DH Lee, A Lanzara Nature 430 (6996), 187-190, 2004	407	2004
Metal to insulator transition in epitaxial graphene induced by molecular doping SY Zhou, DA Siegel, AV Fedorov, A Lanzara Physical review letters 101 (8), 086402, 2008	387	2008
Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene H Choi, F Borondics, DA Siegel, SY Zhou, MC Martin, A Lanzara, ... Applied Physics Letters 94 (17), 2009	309	2009
Universal high energy anomaly in the angle-resolved photoemission spectra of high temperature superconductors: possible evidence of spinon and holon branches J Graf, GH Gweon, K McElroy, SY Zhou, C Jozwiak, E Rotenberg, A Bill, ... Physical review letters 98 (6), 067004, 2007	268	2007
Experimental evidence for type-II Dirac semimetal in K Zhang, M Yan, H Zhang, H Huang, M Arita, Z Sun, W Duan, Y Wu, ... Physical Review B 96 (12), 125102, 2017	265	2017
Origin of the energy bandgap in epitaxial graphene SY Zhou, DA Siegel, AV Fedorov, FE Gabaly, AK Schmid, AHC Neto, ... Nature Materials 7 (4), 259-260, 2008	238	2008
Quasicrystalline 30 twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling W Yao, E Wang, C Bao, Y Zhang, K Zhang, K Bao, CK Chan, C Chen, ... Proceedings of the National Academy of Sciences 115 (27), 6928-6933, 2018	236	2018
Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride E Wang, X Lu, S Ding, W Yao, M Yan, G Wan, K Deng, S Wang, G Chen, ... Nature Physics 12 (12), 1111-1115, 2016	224	2016
Light-induced emergent phenomena in 2D materials and topological materials C Bao, P Tang, D Sun, S Zhou Nature Reviews Physics 4 (1), 33-48, 2022	215	2022
Fully gapped topological surface states in Bi₂Se₃ films induced by a d-wave high-temperature superconductor E Wang, H Ding, AV Fedorov, W Yao, Z Li, YF Lv, K Zhao, LG Zhang, Z Xu, ... Nature physics 9 (10), 621-625, 2013	209	2013
Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe₂ J Lai, X Liu, J Ma, Q Wang, K Zhang, X Ren, Y Liu, Q Gu, X Zhuo, W Lu, ... Advanced materials 30 (22), 1707152, 2018	199	2018

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