Physical Mechanisms behind the Field‐Cycling Behavior of HfO2 ‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
845 2016 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
656 2019 Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 2011
567 2011 A Physical Model of the Temperature Dependence of the Current Through L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ...
IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011
280 2011 Microscopic Modeling of HfOx A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
235 2015 Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
169 2010 A Complete Statistical Investigation of RTN in HfO2 -Based RRAM in High Resistive State FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
139 2015 A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling A Padovani, DZ Gao, AL Shluger, L Larcher
Journal of Applied physics 121 (15), 2017
126 2017 Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
118 2011 Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
111 2011 Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 2013
107 2013 Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics L Vandelli, A Padovani, L Larcher, G Bersuker
IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013
101 2013 Random telegraph noise (RTN) in scaled RRAM devices D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ...
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013
101 2013 Linking conductive filament properties and evolution to synaptic behavior of RRAM devices for neuromorphic applications J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang
IEEE Electron Device Letters 38 (9), 1220-1223, 2017
93 2017 An empirical model for RRAM resistance in low-and high-resistance states FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
91 2013 Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ...
2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011
91 2011 Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
91 2008 A Compact Model of Program Window in HfOx L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
90 2014 Charge Transport and Degradation in HfO2 and HfOx Dielectrics A Padovani, L Larcher, G Bersuker, P Pavan
IEEE electron device letters 34 (5), 680-682, 2013
86 2013 Controlling uniformity of RRAM characteristics through the forming process A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012
80 2012 
Luca VandelliPh.D. University Modena and Reggio EmiliaAdresse e-mail validée de unimore.it
