| TSV transistor—vertical metal gate FET inside a through silicon VIA F Winkler, S Killge, D Fischer, K Richter, A Hiess, JW Bartha IEEE Electron Device Letters 39 (10), 1493-1496, 2018 | 14 | 2018 |
| Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties T Henke, M Knaut, M Geidel, F Winkler, M Albert, JW Bartha Thin Solid Films 627, 94-105, 2017 | 13 | 2017 |
| Demonstration of a graphene-base heterojunction transistor with saturated output current C Strobel, CA Chavarin, B Leszczynska, S Leszczynski, F Winkler, ... Journal of Applied Physics 125 (23), 2019 | 12 | 2019 |
| In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films J Reif, M Knaut, S Killge, F Winkler, M Albert, JW Bartha Journal of Vacuum Science & Technology A 38 (1), 2020 | 11 | 2020 |
| Anisotropic etching of pyramidal silica reliefs with metal masks and hydrofluoric acid R Kirchner, V Neumann, F Winkler, C Strobel, S Völkel, A Hiess, ... Small 16 (43), 2002290, 2020 | 10 | 2020 |
| Demonstration and endurance improvement of p-channel hafnia-based ferroelectric field effect transistors F Winkler, M Pešić, C Richter, M Hoffmann, T Mikolajick, JW Bartha 2019 Device Research Conference (DRC), 51-52, 2019 | 8 | 2019 |
| Design, fabrication, and comparison of 3D multimode optical interconnects on silicon interposer S Charania, N Neumann, S Killge, F Winkler, Z Al-Husseini, L Szilagyi, ... Journal of Lightwave Technology 38 (13), 3454-3460, 2020 | 6 | 2020 |
| Influences on Plasmon Resonance Linewidth in Metal− Insulator− Metal Structures Obtained via Colloidal Self-Assembly Y Yu, D Schletz, J Reif, F Winkler, M Albert, A Fery, R Kirchner ACS Applied Materials & Interfaces 12 (50), 56281-56289, 2020 | 5 | 2020 |
| The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures F Winkler, C Strobel, C Wenzel, JW Bartha physica status solidi (a) 218 (2), 2000511, 2021 | 2 | 2021 |
| Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System F Winkler | 1 | 2020 |
| Dieses Dokument ist eine Zweitveröffentlichung (Postprint)/This is a self-archiving document (accepted version) U Fischer, W Lehner | | |
Johann W. BarthaProfessor für Halbleitertechnik, Technische Universität DresdenAdresse e-mail validée de tu-dresden.de
