Dr. Christian Hauswald

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Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
Sergio Fernández-GarridoAssociate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de MadridAdresse e-mail validée de upm.es
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
Pierre CorfdirABB Corporate ResearchAdresse e-mail validée de ch.abb.com
Johannes K ZettlerLayTec AGAdresse e-mail validée de laytec.de
Vladimir KaganerPaul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
Carsten PfüllerPost Doc, Paul-Drude-InstitutAdresse e-mail validée de pdi-berlin.de
Oliver MarquardtPaul-Drude-Institut fuer Festkörperelektronik BerlinAdresse e-mail validée de pdi-berlin.de
Mattia MusolinoSTMicroelectronicsAdresse e-mail validée de st.com
Pierre LefebvreDirecteur de Recherche CNRS. Physics. Laboratoire Charles Coulomb (L2C), Université de MontpellierAdresse e-mail validée de umontpellier.fr
Pınar DoğanAssistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki KocmanAdresse e-mail validée de mu.edu.tr
Fabio Isa, PhDEvatec AG
Jumpei Kamimura

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Dr. Christian Hauswald

Deutsche Bahn AG - Digitale Schiene Deutschland

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Railways GoA4 Fully-automatic driving 3D-Sensors Optik Optoelektronik


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ... Nano letters 15 (6), 3743-3747, 2015	89	2015
Current path in light emitting diodes based on nanowire ensembles F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ... Nanotechnology 23 (46), 465301, 2012	73	2012
Photoelectrochemical properties of (In, Ga) N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ... Journal of the American Chemical Society 135 (28), 10242-10245, 2013	72	2013
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014	58	2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ... Nanotechnology 25 (45), 455702, 2014	58	2014
Control over the number density and diameter of GaAs nanowires on Si (111) mediated by droplet epitaxy C Somaschini, S Bietti, A Trampert, U Jahn, C Hauswald, H Riechert, ... Nano letters 13 (8), 3607-3613, 2013	58	2013
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ... Nano letters 16 (2), 973-980, 2016	50	2016
Origin of the nonradiative decay of bound excitons in GaN nanowires C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ... Physical Review B 90 (16), 165304, 2014	44	2014
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015	40	2015
Luminous Efficiency of Axial In_xGa_1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials O Marquardt, C Hauswald, M Wölz, L Geelhaar, O Brandt Nano letters 13 (7), 3298-3304, 2013	39	2013
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ... Physical Review B 90 (20), 205301, 2014	35	2014
Correlation between In content and emission wavelength of InxGa1− xN/GaN nanowire heterostructures M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ... Nanotechnology 23 (45), 455203, 2012	34	2012
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires C Hauswald, T Flissikowski, T Gotschke, R Calarco, L Geelhaar, ... Physical Review B—Condensed Matter and Materials Physics 88 (7), 075312, 2013	31	2013
Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films VM Kaganer, B Jenichen, M Ramsteiner, U Jahn, C Hauswald, F Grosse, ... Journal of Physics D: Applied Physics 48 (38), 385105, 2015	26	2015
Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters C Hauswald, I Giuntoni, T Flissikowski, T Gotschke, R Calarco, HT Grahn, ... ACS Photonics 4 (1), 52-62, 2017	24	2017
Localization and defects in axial (In, Ga) N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy J Lähnemann, C Hauswald, M Wölz, U Jahn, M Hanke, L Geelhaar, ... Journal of Physics D: Applied Physics 47 (39), 394010, 2014	22	2014
Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ... Journal of Vacuum Science & Technology B 31 (3), 2013	22	2013
Comparison of the Luminous Efficiencies of Ga- and N-Polar Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy S Fernández-Garrido, J Lähnemann, C Hauswald, M Korytov, M Albrecht, ... Physical Review Applied 6 (3), 034017, 2016	20	2016
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111) C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ... Physical Review B 94 (15), 155308, 2016	16	2016
Indium incorporation in in_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry M Wölz, S Fernández-Garrido, C Hauswald, O Brandt, F Limbach, ... Crystal Growth and Design 12 (11), 5686-5692, 2012	15	2012

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