Dr. Naushad Alam

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Mohammad HasanDepartment of Electronics Engineering, Aligarh Muslim UniversityAdresse e-mail validée de amu.ac.in
Sayeed AhmadAssistant Professor, Dept of Electronics Engg., AMU, AligarhAdresse e-mail validée de zhcet.ac.in
Bulusu AnandIndian Institute of Technology RoorkeeAdresse e-mail validée de ece.iitr.ac.in
MOHD ADIL RAUSHANDEPARTMENT OF ELECTRONICS ENGG, Z.H.C.ET, ALIGARH MUSLIM UNIVERSITYAdresse e-mail validée de zhcet.ac.in
Sudeb DasguptaDepartment of Electronics and Communication Engineering, IIT RoorkeeAdresse e-mail validée de iitr.ac.in
Arvind SharmaR&D Engineer @ imecAdresse e-mail validée de imec.be
Mohammad Jawaid SiddiquiProfessor amu aligarhAdresse e-mail validée de amu.ac.in
Mohit Kumar GuptaSenior Memory Designer @ Axelera AIAdresse e-mail validée de axelera.ai
Tughrul ArslanUniversity of EdinburghAdresse e-mail validée de ed.ac.uk
SYED AFZAL AHMADGuest Faculty, AMU AligarhAdresse e-mail validée de zhcet.ac.in
Belal Iqbalresearch scholarAdresse e-mail validée de iiitd.ac.in
Baljit KaurNational Institute of Technology, DelhiAdresse e-mail validée de nitdelhi.ac.in
M. W. AkramDept. of ECE, Jamia Millia Islamia, New DelhiAdresse e-mail validée de jmi.ac.in
Ahmed ShabanResearch Scholar, IIT DelhiAdresse e-mail validée de ee.iitd.ac.in
Mohd Yusuf YasinElectronics and Communication Department, Integral University, LucknowAdresse e-mail validée de iul.ac.in
Dr. S.Intekhab AminJamia Millia IslamiaAdresse e-mail validée de jmi.ac.in
Raghav chawlaIntel CorporationAdresse e-mail validée de intel.com

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Dr. Naushad Alam

Department of Electronics Engineering, ZHCET, Aligarh Muslim University

Adresse e-mail validée de amu.ac.in - Page d'accueil

Device-Circuit Co-Design Robust Nanoscale Circuit Design SRAM Cell for Low Power Delay Models


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Single-ended Schmitt-trigger-based robust low-power SRAM cell S Ahmad, MK Gupta, N Alam, M Hasan IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016	181	2016
Robust TFET SRAM cell for ultra-low power IoT applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 89, 70-76, 2018	82	2018
Low leakage fully half-select-free robust SRAM cells with BTI reliability analysis S Ahmad, B Iqbal, N Alam, M Hasan IEEE Transactions on Device and Materials Reliability 18 (3), 337-349, 2018	75	2018
Low Leakage Single Bitline 9T (SB9T) Static Random Access Memory MH Sayeed Ahmad, M. K. Gupta, Naushad Alam Microelectronics Journal 62, 1-11, 2017	75	2017
Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications S Ahmad, N Alam, M Hasan AEU-International Journal of Electronics and Communications 83, 366-375, 2018	61	2018
TFET-Based Robust 7T SRAM Cell for Low Power Applications S Ahmad, SA Ahmad, M Muqeem, N Alam, M Hasan IEEE Transactions on Electron Devices 66 (9), 3834 - 3840, 2019	45	2019
Dopingless tunnel field-effect transistor with oversized back gate: proposal and investigation MA Raushan, N Alam, MJ Siddiqui IEEE Transactions on Electron Devices 65 (10), 4701-4708, 2018	45	2018
Impact of asymmetric dual-k spacers on tunnel field effect transistors MA Raushan, N Alam, MW Akram, MJ Siddiqui Journal of Computational Electronics 17, 756-765, 2018	28	2018
Systematic design of CNTFET based OTA and Op amp using g m/I D technique M Yasir, N Alam Analog Integrated Circuits and Signal Processing 102 (2), 293–307, 2020	24	2020
Carbon nanotube interconnects for low-power high-speed applications N Alam, AK Kureshi, M Hasan, T Arslan 2009 IEEE International Symposium on Circuits and Systems, 2273-2276, 2009	18	2009
Design of CNTFET based CCII using gm/ID technique for low voltage and low power applications M Yasir, N Alam Journal of Circuits, Systems and Computers 29 (9), 1-20, 2020	17	2020
Performance Enhancement of Junctionless Tunnel Field Effect Transistor Using Dual-k Spacers MA Raushan, N Alam, MJ Siddiqui Journal of Nanoelectronics and Optoelectronics 13 (6), 912-920, 2018	17	2018
Multifinger MOSFETs’ optimization considering stress and INWE in static CMOS circuits A Sharma, N Alam, S Dasgupta, A Bulusu IEEE Transactions on Electron Devices 63 (6), 2517-2523, 2016	17	2016
Analysis of carbon nanotube interconnects and their comparison with Cu interconnects N Alam, AK Kureshi, M Hasan, T Arslan 2009 International Multimedia, Signal Processing and Communication …, 2009	15	2009
CNTFET based circuit design for improved performance IA Khan, N Alam 2019 International Conference on Electrical, Electronics and Computer …, 2019	14	2019
FPGA and ASIC Implementation and Comparison of Multipliers SY Neyaz, I Saxena, N Alam, SA Rahman 2020 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2020	13	2020
Effective current model for inverter-transmission gate structure and its application in circuit design A Sharma, N Alam, A Bulusu IEEE Transactions on Electron Devices 64 (10), 4002-4010, 2017	13	2017
Efficient ECSM characterization considering voltage, temperature, and mechanical stress variability B Kaur, N Alam, SK Manhas, B Anand IEEE Transactions on Circuits and Systems I: Regular Papers 61 (12), 3407-3415, 2014	13	2014
Comparison of parallel prefix adders based on fpga & asic implementations S Gauhar, A Sharif, N Alam 2020 IEEE students conference on engineering & systems (SCES), 1-6, 2020	12	2020
Design of a triple pocket multi-gate material TFET structure for low-power applications SA Ahmad, N Alam Semiconductor Science and Technology 36 (2), 025015, 2021	11	2021

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