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Anna Fontcuberta i Morral
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Single-nanowire solar cells beyond the Shockley–Queisser limit
P Krogstrup, HI Jørgensen, M Heiss, O Demichel, JV Holm, M Aagesen, ...
Nature photonics 7 (4), 306-310, 2013
9602013
Large-Area Epitaxial Monolayer MoS2
D Dumcenco, D Ovchinnikov, K Marinov, P Lazic, M Gibertini, N Marzari, ...
ACS nano 9 (4), 4611-4620, 2015
9592015
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 245325, 2009
5842009
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
C Colombo, D Spirkoska, M Frimmer, G Abstreiter, A Fontcuberta i Morral
Physical Review B—Condensed Matter and Materials Physics 77 (15), 155326, 2008
5282008
Light generation and harvesting in a van der Waals heterostructure
O Lopez-Sanchez, E Alarcon Llado, V Koman, A Fontcuberta i Morral, ...
ACS nano 8 (3), 3042-3048, 2014
4782014
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
4182013
Gallium arsenide pin radial structures for photovoltaic applications
C Colombo, M Heiβ, M Grätzel, A Fontcuberta i Morral
Applied Physics Letters 94 (17), 2009
3672009
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
A Fontcuberta i Morral, C Colombo, G Abstreiter, J Arbiol, JR Morante
Applied Physics Letters 92 (6), 2008
3502008
Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells
JM Zahler, AF i Morral, CG Ahn, HA Atwater, MW Wanlass, C Chu, PA Iles
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists …, 2002
3002002
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects
I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009
2962009
Impact of surfaces on the optical properties of GaAs nanowires
O Demichel, M Heiss, J Bleuse, H Mariette, A Fontcuberta i Morral
Applied Physics Letters 97 (20), 2010
2912010
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B—Condensed Matter and Materials Physics 83 (4), 045303, 2011
2602011
Vapor phase growth of semiconductor nanowires: key developments and open questions
L Güniat, P Caroff, A Fontcuberta i Morral
Chemical reviews 119 (15), 8958-8971, 2019
2152019
Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements
AF i Morral, PR i Cabarrocas, C Clerc
Physical Review B 69 (12), 125307, 2004
2072004
Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition
AFI Morral, J Arbiol, JD Prades, A Cirera, JR Morante
Adv. Mater 19 (10), 1347-1351, 2007
2042007
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...
Nano letters 12 (5), 2579-2586, 2012
2032012
Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour–solid–solid mechanism
J Arbiol, B Kalache, PR i Cabarrocas, JR Morante, AF i Morral
Nanotechnology 18 (30), 305606, 2007
1932007
GaInP/GaAs/Si triple junction solar cell enabled by wafer bonding and layer transfer
J Zahler, H Atwater, AF i Morral
US Patent App. 11/193,637, 2006
1902006
Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
HA Atwater Jr, J Zahler, AF i Morral, S Olson
US Patent 7,846,759, 2010
1842010
Advances in the theory of III–V nanowire growth dynamics
P Krogstrup, HI Jørgensen, E Johnson, MH Madsen, CB Sørensen, ...
Journal of Physics D: Applied Physics 46 (31), 313001, 2013
1692013
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