Nilesh Goel

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Coauteurs

Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Adresse e-mail validée de ee.iitb.ac.in
Subhadeep MukhopadhyayIntel; Former Principal Engineer in TSMC; Former Ph.D. student, Indian Institute Of TechnologyAdresse e-mail validée de intel.com
Kaustubh JoshiIntelAdresse e-mail validée de ieee.org
Narendra PariharIntel CorporationAdresse e-mail validée de intel.com
Sonal SinghalDepartment of Chemistry, Panjab UniversityAdresse e-mail validée de pu.ac.in
Sujay DesaiPh.D. Student in Electrical Engineering, University of California Berkeley (Past: IIT Bombay)Adresse e-mail validée de eecs.berkeley.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Nilotpal ChoudhuryDevice Solutions, Samsung electronicsAdresse e-mail validée de samsung.com
Tejas NaphadeB.Tech + M.Tech, Indian Institute of Technology BombayAdresse e-mail validée de iitb.ac.in
Shashank GuptaLightmatterAdresse e-mail validée de lightmatter.co
Rajan PandeyVellore Institute of TechnologyAdresse e-mail validée de vit.ac.in
Kota MuraliIBMAdresse e-mail validée de in.ibm.com
Uma SharmaMicron Technology Inc.Adresse e-mail validée de micron.com
Sandip DeBASFAdresse e-mail validée de basf.com
Vipul ChaudharyDepartment of Electrical Engineering, Indian Institute of Technology BombayAdresse e-mail validée de iitb.ac.in
Hussam AmrouchProfessor (W3) of AI Processor Design, Technical University of MunichAdresse e-mail validée de tum.de
Jörg HenkelProfessor of Computer Science, Karlsruhe Institute of TechnologyAdresse e-mail validée de kit.edu
Subrat MishraIMEC, BelgiumAdresse e-mail validée de imec.be
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurAdresse e-mail validée de iitk.ac.in
Chetan Kumar DabhiUniversity of California, BerkeleyAdresse e-mail validée de berkeley.edu

Suivre

Nilesh Goel

Birla Institute of Technology and Science, Pilani Dubai Campus (BITS Pilani Dubai Campus)

Adresse e-mail validée de ieee.org

Device reliability Reliability aware circuits characterization and modeling.


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE Transactions on Electron Devices 60 (3), 901-916, 2013	338	2013
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403, 2017	118	2017
A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE international reliability physics symposium (IRPS), 5A. 3.1-5A. 3.10, 2012	110	2012
A modeling framework for NBTI degradation under dynamic voltage and frequency scaling N Parihar, N Goel, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices 63 (3), 946-953, 2016	67	2016
A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 2.1-XT. 2.11, 2013	59	2013
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress N Goel, T Naphade, S Mahapatra 2015 IEEE International Reliability Physics Symposium, 4A. 3.1-4A. 3.7, 2015	50	2015
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs N Goel, K Joshi, S Mukhopadhyay, N Nanaware, S Mahapatra Microelectronics Reliability 54 (3), 491-519, 2014	49	2014
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014	44	2014
Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017	34	2017
A comparative study of NBTI and PBTI using different experimental techniques S Mukhopadhyay, N Goel, S Mahapatra IEEE Transactions on Electron Devices 63 (10), 4038-4045, 2016	34	2016
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014	33	2014
Device to circuit framework for activity-dependent nbti aging in digital circuits A Thirunavukkarasu, H Amrouch, J Joe, N Goel, N Parihar, S Mishra, ... IEEE Transactions on Electron Devices 66 (1), 316-323, 2018	32	2018
Characterization methods for BTI degradation and associated gate insulator defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016	30	2016
Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation T Naphade, N Goel, PR Nair, S Mahapatra 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 5.1-XT. 5.11, 2013	30	2013
Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs N Goel, N Nanaware, S Mahapatra IEEE electron device letters 34 (12), 1476-1478, 2013	29	2013
Modeling of DC-AC NBTI Stress-Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1281-1288, 2020	27	2020
Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages N Goel, P Dubey, J Kawa, S Mahapatra 2015 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2015	25	2015
A detailed study of gate insulator process dependence of NBTI using a compact model K Joshi, S Mukhopadhyay, N Goel, N Nanware, S Mahapatra IEEE Transactions on Electron Devices 61 (2), 408-415, 2014	21	2014
A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs S Mukhopadhyay, N Parihar, N Goel, S Mahapatra IEEE Transactions on Electron Devices 64 (4), 1474-1481, 2017	18	2017
Reaction-diffusion model AE Islam, N Goel, S Mahapatra, MA Alam Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016	16	2016

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