Dr. Nandakishor Yadav

Citée par

	Toutes	Depuis 2020
Citations	500	417
indice h	12	12
indice i10	14	13

120

2014201520162017201820192020202120222023202420255 11 7 4 17 34 64 82 66 101 97 6

Accès public

Tout afficher

10 articles

13 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Dr. Santosh Kumar VishvakarmaIndian Institute of Technology IndoreAdresse e-mail validée de iiti.ac.in
Ambika Prasad ShahAssistant Professor, Electrical Engineering Department, Indian Institute of Technology JammuAdresse e-mail validée de iitjammu.ac.in
Dr. ANKUR BEOHARSEEE, VIT Bhopal UniversityAdresse e-mail validée de vitbhopal.ac.in
Dr. Manisha PattanaikProfessor, ABV-IIITM Gwalior (INDIA)Adresse e-mail validée de iiitm.ac.in
Thomas KämpfeTU Braunschweig | Fraunhofer IPMS - Center Nanoelectronic TechnologiesAdresse e-mail validée de tu-braunschweig.de
Yukui LuoBinghamton UniversityAdresse e-mail validée de binghamton.edu
Mahmoud AlashiResearch AssistantAdresse e-mail validée de hawk.iit.edu
Maximilian LedererFraunhofer IPMS - CNTAdresse e-mail validée de ipms.fraunhofer.de
Victoria Heekyung KimIllinois Institute of TechnologyAdresse e-mail validée de hawk.iit.edu
Suneel DuttNational Institute of Technology (NIT) JalandharAdresse e-mail validée de nitj.ac.in
Sourav DeCollege of Semiconductor Research, National Tsing Hua UniversityAdresse e-mail validée de mx.nthu.edu.tw
Shikha JainPrincipal Research Engineer, Western DigitalAdresse e-mail validée de wdc.com
nanda sanjuMaharshi Dayanand University, RohtakAdresse e-mail validée de mdurohtak.ac.in
Kyuwon Ken ChoiProfessor of ECE, Illinois Institute of TechnologyAdresse e-mail validée de iit.edu
Vikas VijayvargiyaVIT VILLOREAdresse e-mail validée de vit.ac.in
David LehningerFraunhofer IPMS CNTAdresse e-mail validée de ipms.fraunhofer.de
Hannes MähneX-FAB Dresden GmbH & Co. KGAdresse e-mail validée de xfab.com
Dr. Maisagalla GopalNIT KarnatakaAdresse e-mail validée de nitk.edu.in
GOPAL RAUTC-DAC Bangalore, IndiaAdresse e-mail validée de iiti.ac.in
Pooran SinghEcole Centrale School of Engineering, Mahindra UniversitAdresse e-mail validée de mahindrauniversity.edu.in

Suivre

Dr. Nandakishor Yadav

Autres nomsNand kishore yadav

Fraunhofer Institute fo Photonics Microsystems

Adresse e-mail validée de ipms.fraunhofer.de - Page d'accueil

Ferroelectric Memory and Peripheral Circuit Design


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Stable, reliable, and bit-interleaving 12T SRAM for space applications: A device circuit co-design N Yadav, AP Shah, SK Vishvakarma IEEE Transactions on Semiconductor Manufacturing 30 (3), 276-284, 2017	57	2017
A novel FPGA accelerator design for real-time and ultra-low power deep convolutional neural networks compared with titan X GPU S Li, Y Luo, K Sun, N Yadav, KK Choi IEEE Access 8, 105455-105471, 2020	54	2020
A comprehensive survey of fake news in social networks: Attributes, features, and detection approaches MR Kondamudi, SR Sahoo, L Chouhan, N Yadav Journal of King Saud University-Computer and Information Sciences 35 (6), 101571, 2023	52	2023
On-chip Adaptive Body Bias for Reducing the Impact of NBTI on 6T SRAM Cells AP Shah, N Yadav, SK Vishvakerma IEEE Transactions on Semiconductor Manufacturing 31 (2), 1-8, 2018	48	2018
Process variation and NBTI resilient Schmitt trigger for stable and reliable circuits AP Shah, N Yadav, A Beohar, SK Vishvakarma IEEE Transactions on Device and Materials Reliability 18 (4), 546-554, 2018	28	2018
Low-power RTL code generation for advanced CNN algorithms toward object detection in autonomous vehicles Y Kim, H Kim, N Yadav, S Li, KK Choi Electronics 9 (3), 478, 2020	21	2020
An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells AP Shah, N Yadav, A Beohar, SK Vishvakarma Microelectronics Reliability 87, 15-23, 2018	21	2018
Analysis of trap‐assisted tunnelling in asymmetrical underlap 3D‐cylindrical GAA‐TFET based on hetero‐spacer engineering for improved device reliability A Beohar, N Yadav, SK Vishvakarma Micro & Nano Letters 12 (12), 982-986, 2017	19	2017
Systematically Optimized Ketoprofen-Loaded Novel Proniosomal Formulation for Periodontitis: In Vitro Characterization and In Vivo Pharmacodynamic Evaluation NK Yadav, S Nanda, G Sharma, OP Katare AAPS PharmSciTech 18 (5), 1863-1880, 2017	19	2017
Ultra-low power and high-throughput SRAM design to enhance AI computing ability in autonomous vehicles Y Kim, S Patel, H Kim, N Yadav, KK Choi Electronics 10 (3), 256, 2021	18	2021
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications A Beohar, N Yadav, AP Shah, SK Vishvakarma Journal of Computational Electronics 17 (4), 1650-1657, 2018	18	2018
SPICE compatible semi-empirical compact model for ferroelectric hysteresis M Lederer, R Olivo, N Yadav, S De, K Seidel, LM Eng, T Kämpfe Solid-State Electronics 199, 108501, 2023	13	2023
Novel CNN-based AP2D-net accelerator: An area and power efficient solution for real-time applications on mobile FPGA S Li, K Sun, Y Luo, N Yadav, K Choi Electronics 9 (5), 832, 2020	12	2020
Double-gate FinFET process variation aware 10T SRAM cell topology design and analysis N Yadav, S Dutt, M Pattnaik, GK Sharma 2013 European Conference on Circuit Theory and Design (ECCTD), 1-4, 2013	11	2013
Design of a voltage to time converter with high conversion gain for reliable and secure autonomous vehicles N Yadav, Y Kim, M Alashi, K Ken Choi Electronics 9 (3), 384, 2020	9	2020
NMOS only Schmitt trigger circuit for NBTI resilient CMOS circuits AP Shah, N Yadav, A Beohar, SK Vishvakarma Electronics Letters 54 (14), 868-870, 2018	9	2018
NBTI aware IG-FinFET based SRAM design using adaptable trip-point sensing technique N Yadav, S Jain, M Pattanaik, GK Sharma Proceedings of the 2014 IEEE/ACM International Symposium on Nanoscale …, 2014	9	2014
SUBHDIP: process variations tolerant subthreshold Darlington pair‐based NBTI sensor circuit AP Shah, N Yadav, A Beohar, SK Vishvakarma IET Computers & Digital Techniques 13 (3), 243-249, 2019	7	2019
A novel ultra-low power 8T SRAM-based compute-in-memory design for binary neural networks Y Kim, S Li, N Yadav, KK Choi Electronics 10 (17), 2181, 2021	6	2021
A new sensitivity-driven process variation aware self-repairing low-power SRAM design N Yadav, S Dutt, GK Sharma 2014 27th International Conference on VLSI Design and 2014 13th …, 2014	6	2014

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs