Yuh-Renn Wu

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Jim SpeckProfessor of Materials, UCSBAdresse e-mail validée de ucsb.edu
Chi-Kang LiNational Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
claude weisbuchAdresse e-mail validée de engineering.ucsb.edu
Peichen YuDepartment of Photonics, National Chiao Tung UniversityAdresse e-mail validée de faculty.nctu.edu.tw
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraAdresse e-mail validée de engineering.ucsb.edu
Hung-Hsun HuangMeta Platforms, Inc., National Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
Jian-Jang HuangNational Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
Madhusudan SinghAssociate Professor at Indian Institute of Technology, DelhiAdresse e-mail validée de umich.edu
TSUNG-YIN TSAIPhD in Graduate Institute of Photonics and Optoelectronics, National Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
Marcel FilocheInstitut Langevin, ESPCIAdresse e-mail validée de espci.psl.eu
Marco PiccardoAssistant Professor, Técnico Lisboa; Visiting Professor, Harvard UniversityAdresse e-mail validée de g.harvard.edu
Jacques PERETTISenior Scientist, CNRSAdresse e-mail validée de polytechnique.edu
Tien-chang LuNational Yang Ming Chiao Tung UniversityAdresse e-mail validée de nycu.edu.tw
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice UniversityAdresse e-mail validée de rice.edu
I-Chun ChengGraduate Institute of Photonics and Optoelectronics, National Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
Lucio MartinelliLaboratoire PMC - CNRS/Ecole PolytechniqueAdresse e-mail validée de polytechnique.edu
Krystian MichalczewskiVigo System S.A.Adresse e-mail validée de vigo.com.pl
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonAdresse e-mail validée de wisc.edu
Jiun-Haw Lee 李君浩GIPO and EE Dept., National Taiwan UniversityAdresse e-mail validée de ntu.edu.tw
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsAdresse e-mail validée de nycu.edu.tw

Suivre

Yuh-Renn Wu

Professor of Electrical Engineering, National Taiwan University

Adresse e-mail validée de ntu.edu.tw - Page d'accueil

Semiconductor Physics Optoelectronics Numerical Modeling Coding and developing modeling Program


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	474	2020
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ... Physical Review B 95 (14), 144206, 2017	190	2017
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior TJ Yang, R Shivaraman, JS Speck, YR Wu Journal of Applied Physics 116 (11), 2014	173	2014
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure YR Wu, R Shivaraman, KC Wang, JS Speck Applied Physics Letters 101 (8), 2012	149	2012
Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors F Lee, LY Su, CH Wang, YR Wu, J Huang IEEE Electron Device Letters 36 (3), 232-234, 2015	148	2015
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck Journal of applied physics 115 (19), 2014	144	2014
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting YR Wu, YY Lin, HH Huang, J Singh Journal of applied physics 105 (1), 2009	143	2009
Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs CK Li, YR Wu IEEE transactions on electron devices 59 (2), 400-407, 2011	140	2011
Localization landscape theory of disorder in semiconductors. I. Theory and modeling M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda Physical Review B 95 (14), 144204, 2017	123	2017
Strain-enhanced photoluminescence from Ge direct transition TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ... Applied Physics Letters 96 (21), 2010	116	2010
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ... Physical Review B 95 (14), 144205, 2017	110	2017
Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs YR Wu, C Chiu, CY Chang, P Yu, HC Kuo IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1226-1233, 2009	108	2009
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells JR Lang, NG Young, RM Farrell, YR Wu, JS Speck Applied Physics Letters 101 (18), 2012	104	2012
Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process HA Chin, I Cheng, CI Huang, YR Wu, WS Lu, WL Lee, JZ Chen, KC Chiu, ... Journal of Applied Physics 108 (5), 2010	96	2010
Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment A Datta, YR Wu, YL Wang Physical Review B 63 (12), 125407, 2001	96	2001
Giant gauge factor of Van der Waals material based strain sensors W Yan, HR Fuh, Y Lv, KQ Chen, TY Tsai, YR Wu, TH Shieh, KM Hung, J Li, ... Nature communications 12 (1), 2018, 2021	93	2021
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy DA Browne, B Mazumder, YR Wu, JS Speck Journal of Applied Physics 117 (18), 2015	82	2015
Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ... Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014	78	2014
Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length YR Wu, M Singh, J Singh IEEE transactions on electron devices 53 (4), 588-593, 2006	78	2006
Study on the effect of size on InGaN red micro-LEDs RH Horng, CX Ye, PW Chen, D Iida, K Ohkawa, YR Wu, DS Wuu Scientific reports 12 (1), 1324, 2022	74	2022

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