Alexey Tarasov

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Christian SchoenenbergerDepartment of Physics and Swiss Nanoscience Institute of University of BaselAdresse e-mail validée de unibas.ch
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyAdresse e-mail validée de mse.gatech.edu
Mathias WipfEmpaAdresse e-mail validée de empa.ch
Michel CalameHead of Laboratory, Empa & Prof. of Nanoscience, University of BaselAdresse e-mail validée de empa.ch
Meng-Yen TsaiGeorgia Institute of TechnologyAdresse e-mail validée de gatech.edu
Dr. Oren KnopfmacherAvails MedicalAdresse e-mail validée de availsmedical.com
Philip M CampbellGeorgia TechAdresse e-mail validée de gatech.edu
Marcin Szymon FilipiakCentre for Advanced Materials and Technologies CEZAMAT, Warsaw University of TechnologyAdresse e-mail validée de pw.edu.pl
Corey JoinerGeorgia Institute of TechnologyAdresse e-mail validée de gatech.edu
Oscar GutiérrezTeam LeadAdresse e-mail validée de roche.com
Jud ReadyPrincipal Research Engineer & Adj. ProfessorAdresse e-mail validée de gatech.edu
Samuel GrahamUniversity of MarylandAdresse e-mail validée de umd.edu
Ralph StoopAdresse e-mail validée de fmc.ub.edu
Nesha May AndoyUniversity of Toronto ScarboroughAdresse e-mail validée de utoronto.ca
Vitaliy GuzenkoResearcher, Paul Scherrer InstituteAdresse e-mail validée de psi.ch
Ali AdibiProfessor of Electrical EngineeringAdresse e-mail validée de ece.gatech.edu
Natalie HausteinResearch Associate, BioMed X GmbHAdresse e-mail validée de bio.mx
Markus WeissInstitute for Quantum Optics and Quantum Information - IQOQI, Innsbruck, AustriaAdresse e-mail validée de oeaw.ac.at
Hossein TaghinejadKavli ENSI Junior Fellow, UC BerkeleyAdresse e-mail validée de berkeley.edu
Zohreh Razavi HesabiLam ResearchAdresse e-mail validée de lamresearch.com

Suivre

Alexey Tarasov

Professor of Biomedical Engineering, Kaiserslautern University of Applied Sciences

Adresse e-mail validée de hs-kl.de

nanoelectronics biosensing FETs silicon nanowires 2D materials


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Nernst limit in dual-gated Si-nanowire FET sensors O Knopfmacher, A Tarasov, W Fu, M Wipf, B Niesen, M Calame, ... Nano letters 10 (6), 2268-2274, 2010	411	2010
Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants. A Tarasov, S Zhang, MY Tsai, PM Campbell, S Graham, S Barlow, ... Advanced Materials (Deerfield Beach, Fla.) 27 (7), 1175-1181, 2015	233	2015
Graphene transistors are insensitive to pH changes in solution W Fu, C Nef, O Knopfmacher, A Tarasov, M Weiss, M Calame, ... Nano letters 11 (9), 3597-3600, 2011	232	2011
Flexible MoS₂ Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors MY Tsai, A Tarasov, ZR Hesabi, H Taghinejad, PM Campbell, CA Joiner, ... ACS applied materials & interfaces 7 (23), 12850-12855, 2015	173	2015
Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors A Tarasov, M Wipf, RL Stoop, K Bedner, W Fu, VA Guzenko, ... ACS nano 6 (10), 9291-9298, 2012	140	2012
Highly uniform trilayer molybdenum disulfide for wafer‐scale device fabrication A Tarasov, PM Campbell, MY Tsai, ZR Hesabi, J Feirer, S Graham, ... Advanced Functional Materials 24 (40), 6389-6400, 2014	134	2014
Selective sodium sensing with gold-coated silicon nanowire field-effect transistors in a differential setup M Wipf, RL Stoop, A Tarasov, K Bedner, W Fu, IA Wright, CJ Martin, ... ACS nano 7 (7), 5978-5983, 2013	123	2013
A potentiometric biosensor for rapid on-site disease diagnostics A Tarasov, DW Gray, MY Tsai, N Shields, A Montrose, N Creedon, ... Biosensors and Bioelectronics 79, 669-678, 2016	121	2016
High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization W Fu, C Nef, A Tarasov, M Wipf, R Stoop, O Knopfmacher, M Weiss, ... Nanoscale 5 (24), 12104-12110, 2013	108	2013
Highly sensitive, selective and label-free protein detection in physiological solutions using carbon nanotube transistors with nanobody receptors MS Filipiak, M Rother, NM Andoy, AC Knudsen, S Grimm, C Bachran, ... Sensors and Actuators B: Chemical 255, 1507-1516, 2018	91	2018
Graphene‐based electronic immunosensor with femtomolar detection limit in whole serum NM Andoy, MS Filipiak, D Vetter, Ó Gutiérrez‐Sanz, A Tarasov Advanced Materials Technologies 3 (12), 1800186, 2018	79	2018
Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors A Tarasov, W Fu, O Knopfmacher, J Brunner, M Calame, ... Applied physics letters 98 (1), 2011	79	2011
True reference nanosensor realized with silicon nanowires A Tarasov, M Wipf, K Bedner, J Kurz, W Fu, VA Guzenko, O Knopfmacher, ... Langmuir 28 (25), 9899-9905, 2012	78	2012
Direct, label-free, and rapid transistor-based immunodetection in whole serum Ó Gutiérrez-Sanz, NM Andoy, MS Filipiak, N Haustein, A Tarasov ACS sensors 2 (9), 1278-1286, 2017	75	2017
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe 2 PM Campbell, A Tarasov, CA Joiner, MY Tsai, G Pavlidis, S Graham, ... Nanoscale 8 (4), 2268-2276, 2016	74	2016
Enhanced resonant tunneling in symmetric 2D semiconductor vertical heterostructure transistors PM Campbell, A Tarasov, CA Joiner, WJ Ready, EM Vogel ACS nano 9 (5), 5000-5008, 2015	72	2015
Investigation of the dominant 1/f noise source in silicon nanowire sensors K Bedner, VA Guzenko, A Tarasov, M Wipf, RL Stoop, S Rigante, ... Sensors and Actuators B: Chemical 191, 270-275, 2014	72	2014
pH response of silicon nanowire sensors: Impact of nanowire width and gate oxide K Bedner, VA Guzenko, A Tarasov, M Wipf, RL Stoop, D Just, S Rigante, ... Sens. Mater 25 (8), 567-576, 2013	56	2013
Analytical model to describe the effect of polyethylene glycol on ionic screening of analyte charges in transistor-based immunosensing N Haustein, Ó Gutiérrez-Sanz, A Tarasov ACS sensors 4 (4), 874-882, 2019	51	2019
Gold-coated graphene field-effect transistors for quantitative analysis of protein–antibody interactions A Tarasov, MY Tsai, EM Flynn, CA Joiner, RC Taylor, EM Vogel 2D Materials 2 (4), 044008, 2015	41	2015

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