Interface Engineering of Monolayer MoS2 /GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation … Z Zhang, Q Qian, B Li, KJ Chen
ACS applied materials & interfaces 10 (20), 17419-17426, 2018
248 2018 Mechanism of Threshold Voltage Shift in X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
138 2018 High-field linear magneto-resistance in topological insulator Bi2Se3 thin films H He, B Li, H Liu, X Guo, Z Wang, M Xie, J Wang
Applied Physics Letters 100 (3), 2012
135 2012 Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
132 2020 Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
99 2015 Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ...
2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011
99 2011 Characterization of V T ‐instability in enhancement‐mode Al2 O3 ‐AlGaN/GaN MIS‐HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
93 2013 Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films HT He, HC Liu, BK Li, X Guo, ZJ Xu, MH Xie, JN Wang
Applied Physics Letters 103 (3), 2013
68 2013 Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen
IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014
66 2014 Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 27676, 2016
65 2016 Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li
physica status solidi (a) 212 (5), 1059-1065, 2015
62 2015 Theoretical study on the photocatalytic properties of 2D InX (X= S, Se)/transition metal disulfide (MoS 2 and WS 2) van der Waals heterostructures H Guo, Z Zhang, B Huang, X Wang, H Niu, Y Guo, B Li, R Zheng, H Wu
Nanoscale 12 (38), 20025-20032, 2020
58 2020 Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
57 2015 Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li
Apl Materials 8 (4), 2020
55 2020 Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ...
Solar Energy Materials and Solar Cells 200, 109915, 2019
55 2019 Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance M Zhang, J Wei, X Zhou, H Jiang, B Li, KJ Chen
IEEE Electron Device Letters 40 (1), 79-82, 2018
53 2018 Trion Binding Energy Variation on Photoluminescence Excitation Energy and Power during Direct to Indirect Bandgap Crossover in Monolayer and Few-Layer MoS2 S Golovynskyi, OI Datsenko, D Dong, Y Lin, I Irfan, B Li, D Lin, J Qu
The Journal of Physical Chemistry C 125 (32), 17806-17819, 2021
45 2021 Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and … I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ...
The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021
43 2021 Barrier inhomogeneity of Schottky diode on nonpolar AlN grown by physical vapor transport Q Zhou, H Wu, H Li, X Tang, Z Qin, D Dong, Y Lin, C Lu, R Qiu, R Zheng, ...
IEEE Journal of the Electron Devices Society 7, 662-667, 2019
41 2019 Persistent photoconductivity and carrier transport in AlGaN∕ GaN heterostructures treated by fluorine plasma BK Li, WK Ge, JN Wang, KJ Chen
Applied physics letters 92 (8), 2008
41 2008 
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