| Machine Learning Paves the Way for High Entropy Compounds Exploration: Challenges, Progress, and Outlook X Wan, Z Li, W Yu, A Wang, X Ke, H Guo, J Su, L Li, Q Gui, S Zhao, ... Advanced Materials, 2305192, 2023 | 24 | 2023 |
| Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation Y Liu, C Shao, W Yu, Q Gui, J Robertson, Y Guo* Applied Physics Letters 121 (24), 244105, 2022 | 23 | 2022 |
| Ab-initio study of Schottky barrier heights at metal-diamond (1 1 1) interfaces C Cheng, Z Zhang, X Sun, Q Gui, G Wu, F Dong, D Zhang, Y Guo*, S Liu* Applied Surface Science 615, 156329, 2023 | 11 | 2023 |
| Active learning the high-dimensional transferable Hubbard U and V parameters in the DFT+ U+ V scheme W Yu, Z Zhang*, X Wan, H Guo, Q Gui, Y Peng, Y Li, W Fu, D Lu, Y Ye, ... Journal of Chemical Theory and Computation 19 (18), 6425-6433, 2023 | 7 | 2023 |
| A novel phase-shifted pulse width amplitude modulation for extended-boost quasi-Z source cascaded multilevel inverter based on photovoltaic power system L Yi, Q Gui*, Z Wang Journal of Renewable and Sustainable Energy 11 (1), 015304, 2019 | 7 | 2019 |
| Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate Q Gui, Z Wang, C Cheng, X Zha, J Robertson, S Liu, Z Zhang*, Y Guo* Applied Physics Letters 121 (21), 211601, 2022 | 6 | 2022 |
| Amorphous TeO2 as p-type oxide semiconductor for device applications J Robertson*, X Zhang, Q Gui, Y Guo Applied Physics Letters 124 (21), 212101, 2024 | 5 | 2024 |
| Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric Q Gui, W Yu, C Cheng, H Guo, X Zha, J Robertson, S Liu, Z Zhang*, ... IEEE Transactions on Electron Devices 70 (11), 5550-5556, 2023 | 5 | 2023 |
| High-throughput interface prediction and generation scheme: The case of β-Ga2O3/AlN interfaces W Yu, Q Gui, X Wan, J Robertson, Z Zhang*, Y Guo* Applied Physics Letters 123 (16), 161601, 2023 | 3 | 2023 |
| Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics H Guo, Z Zhang*, C Shao, W Yu, Q Gui, P Liu, H Zhong, R Cao, ... Journal of Materials Science & Technology 201, 149-156, 2024 | 2 | 2024 |
| High-Accuracy Machine-Learned Interatomic Potentials for the Phase Change Material Ge3Sb6Te5 W Yu, Z Zhang*, X Wan, J Su, Q Gui, H Guo, H Zhong, J Robertson, ... Chemistry of Materials 35 (17), 6651-6658, 2023 | 2 | 2023 |
| Point Defect Stability and Dielectric Properties of Graphene-Like Monolayer Materials Q Gui, Z Wang, Z Zhang, L Xie, X Zha, J Wang*, Y Guo* Chemistry of Materials 35 (1), 51-62, 2022 | 2 | 2022 |
| Direct matrix converter based on improved quasi‐Z source network B Zou, Y Guo*, Z Wang, Q Gui, M Shi, Y Tu IET Power Electronics 13 (18), 4270-4281, 2020 | 2 | 2020 |
| A novel quasi-Z source cascaded multilevel photovoltaic power system applied to smart microgrid L Yi, Q Gui, Z Wang 10th Asia-Pacific Power and Energy Engineering Conference (APPEEC 2018), 34-42, 2018 | 2 | 2018 |
| Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending Q Gui, W Yu, C Cheng, H Guo, X Zha, R Cao, H Zhong, J Robertson, S Liu, ... Journal of Materials Science & Technology 207, 76-85, 2024 | 1 | 2024 |
| Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X= Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices C Cheng, X Sun, Q Gui, G Wu, W Shen, F Dong*, Y Liu, J Robertson, ... ACS Applied Materials & Interfaces 16 (19), 25581-25588, 2024 | 1 | 2024 |
| Theoretical Insights into the Interface Engineering of β-Ga2O3 Devices with Ferroelectric HfO2 Gate Dielectric: Impact of Polarization Direction J Su, Z Zhang*, Q Gui, W Yu, X Wan, A Wang, Z Li, R Cao, J Robertson, ... Surfaces and Interfaces 56, 105703, 2024 | | 2024 |
| TeO2 as Amorphous P-Type Transistor for Back-End-of-Line Applications J Robertson, X Zhang, Q Gui, Y Guo 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit …, 2024 | | 2024 |
| Structural design and electronic performance at MOx/diamond (M= Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications C Cheng, R Li, Q Gui, G Wu, K Liang, F Dong, Y Guo, Z Zhang*, S Liu* Applied Surface Science 679, 161231, 2024 | | 2024 |
| Amorphous TeO2 as P-Type Oxide Semiconductor for BEOL Applications J Robertson*, X Zhang, Q Gui, Y Guo IEEE International VLSI Symposium on Technology, Systems and Applications …, 2024 | | 2024 |
郭宇铮Yuzheng Guo武汉大学Wuhan UniversityAdresse e-mail validée de whu.edu.cn
