Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
107 2016 Design of 1.2 kV Power Switches With Low D Ji, S Chowdhury
IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015
99 2015 880V/2.7 mΩ· cm 2 MIS Gate Trench CAVET on Bulk GaN Substrates D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863, 2018
92 2018 Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017
74 2017 Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures D Ji, B Ercan, S Chowdhury
Applied Physics Letters 115 (7), 2019
73 2019 Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) D Ji, G Chirag, A Anchal, C Silvia,H, L Cory, L Wenwen, K Stacia, ...
IEEE Electron Device Letters 39 (5), 711, 2018
69 2018 Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...
IEEE Electron Device Letters 38 (7), 933-936, 2017
54 2017 Dynamic modeling and power loss analysis of high-frequency power switches based on GaN CAVET D Ji, Y Yue, J Gao, S Chowdhury
IEEE Transactions on Electron Devices 63 (10), 4011-4017, 2016
46 2016 Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m2 /1500 V GaN Diodes D Ji, S Li, B Ercan, C Ren, S Chowdhury
IEEE Electron Device Letters 41 (2), 264-267, 2019
45 2019 Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation D Ji, A Agarwal, W Li, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 65 (2), 483, 2018
45 2018 A study on the impact of channel mobility on switching performance of vertical GaN MOSFETs D Ji, W Li, S Chowdhury
IEEE Transactions on Electron Devices 65 (10), 4271-4275, 2018
43 2018 Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ...
IEEE Electron Device Letters 39 (7), 1030-1033, 2018
39 2018 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K D Ji, B Ercan, G Benson, AKM Newaz, S Chowdhury
Applied Physics Letters 116 (21), 2020
36 2020 Demonstration of GaN static induction transistor (SIT) using self-aligned process W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury
IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017
34 2017 Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors D Ji, B Liu, Y Lu, G Liu, Q Zhu, Z Wang
Applied Physics Letters 100 (13), 2012
32 2012 On impact ionization and avalanche in gallium nitride D Ji, S Chowdhury
Applied Physics Letters 117 (25), 2020
25 2020 Electro-thermal investigation of GaN vertical trench MOSFETs B Chatterjee, D Ji, A Agarwal, SH Chan, S Chowdhury, S Choi
IEEE Electron Device Letters 42 (5), 723-726, 2021
19 2021 III-nitride based N polar vertical tunnel transistor S Chowdhury, D Ji
US Patent 9,893,174, 2018
18 2018 Impact of trench dimensions on the device performance of GaN vertical trench MOSFETs C Gupta, D Ji, SH Chan, A Agarwal, W Leach, S Keller, S Chowdhury, ...
IEEE Electron Device Letters 38 (11), 1559-1562, 2017
15 2017 Vertical string driver with extended gate junction structure D Ji, G Huang, D Thimmegowda
US Patent 12,089,412, 2024
14 2024 
Srabanti ChowdhuryStanford UniversityAdresse e-mail validée de stanford.edu