Articles avec mandats d'accès public - Matthew HalsallEn savoir plus
Non disponibles : 3
Size limit on the phosphorous doped silicon nanocrystals for dopant activation
P Yang, RM Gwilliam, IF Crowe, N Papachristodoulou, MP Halsall, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013
Exigences : UK Engineering and Physical Sciences Research Council
Structure and luminescence of rare earth-doped silicon oxides studied through XANES and XEOL
T Roschuk, P Wilson, J Li, K Dunn, J Wojcik, I Crowe, R Gwilliam, ...
ECS Transactions 25 (9), 213, 2009
Exigences : Instituts de recherche en santé du Canada
Deep-level analysis of passivation of transition metal impurities in silicon
J Mullins, V Markevich, S Leonard, MP Halsall, AR Peaker
ECS Transactions 86 (10), 125, 2018
Exigences : UK Engineering and Physical Sciences Research Council
Disponibles quelque part : 42
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ...
Journal of Applied Physics 125 (18), 2019
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Hydrogenation of graphene by reaction at high pressure and high temperature
D Smith, RT Howie, IF Crowe, CL Simionescu, C Muryn, V Vishnyakov, ...
ACS nano 9 (8), 8279-8283, 2015
Exigences : UK Engineering and Physical Sciences Research Council
Graphene oxide films for field effect surface passivation of silicon for solar cells
M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ...
Solar Energy Materials and Solar Cells 187, 189-193, 2018
Exigences : UK Engineering and Physical Sciences Research Council
Graphene oxide integrated silicon photonics for detection of vapour phase volatile organic compounds
HC Leo Tsui, O Alsalman, B Mao, A Alodhayb, H Albrithen, AP Knights, ...
Scientific Reports 10 (1), 9592, 2020
Exigences : UK Engineering and Physical Sciences Research Council
Towards substrate engineering of graphene–silicon Schottky diode photodetectors
H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ...
Nanoscale 10 (7), 3399-3409, 2018
Exigences : UK Engineering and Physical Sciences Research Council
Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
J Mullins, VP Markevich, M Vaqueiro-Contreras, NE Grant, L Jensen, ...
Journal of Applied Physics 124 (3), 2018
Exigences : UK Engineering and Physical Sciences Research Council
Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem
VP Markevich, M Vaqueiro-Contreras, JT De Guzman, J Coutinho, ...
physica status solidi (a), 1900315, 2019
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Extended wavelength responsivity of a germanium photodetector integrated with a silicon waveguide exploiting the indirect transition
R Anthony, DE Hagan, D Genuth-Okon, LM Maestro, IF Crowe, ...
IEEE Journal of Selected Topics in Quantum Electronics 26 (2), 1-7, 2019
Exigences : Conseil de recherches en sciences naturelles et en génie du Canada, UK …
Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon
M Vaqueiro‐Contreras, VP Markevich, MP Halsall, AR Peaker, P Santos, ...
physica status solidi (RRL)–Rapid Research Letters 11 (8), 1700133, 2017
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms
J Mullins, S Leonard, VP Markevich, ID Hawkins, P Santos, J Coutinho, ...
physica status solidi (a) 214 (7), 1700304, 2017
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Vibrational properties of GaP and GaP1–x Nx under hydrostatic pressures up to 30 GPa
MP Jackson, MP Halsall, M Güngerich, PJ Klar, W Heimbrodt, JF Geisz
physica status solidi (b) 244 (1), 336-341, 2007
Exigences : German Research Foundation
Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques
VP Markevich, M Vaqueiro-Contreras, SB Lastovskii, LI Murin, MP Halsall, ...
Journal of Applied Physics 124 (22), 2018
Exigences : UK Engineering and Physical Sciences Research Council
Raman mapping analysis of graphene-integrated silicon micro-ring resonators
SM Hussein, IF Crowe, N Clark, M Milosevic, A Vijayaraghavan, ...
Nanoscale Research Letters 12, 1-8, 2017
Exigences : UK Engineering and Physical Sciences Research Council
Electronic properties and structure of boron–hydrogen complexes in crystalline silicon
JAT De Guzman, VP Markevich, J Coutinho, NV Abrosimov, MP Halsall, ...
Solar RRL 6 (5), 2100459, 2022
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Determination of the quasi-TE mode (in-plane) graphene linear absorption coefficient via integration with silicon-on-insulator racetrack cavity resonators
IF Crowe, N Clark, S Hussein, B Towlson, E Whittaker, MM Milosevic, ...
Optics express 22 (15), 18625-18632, 2014
Exigences : UK Engineering and Physical Sciences Research Council
Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si
P Santos, J Coutinho, S Öberg, M Vaqueiro‐Contreras, VP Markevich, ...
physica status solidi (a) 214 (7), 1700309, 2017
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
JAT De Guzman, VP Markevich, ID Hawkins, J Coutinho, HM Ayedh, ...
Journal of Applied Physics 130 (24), 2021
Exigences : Fundação para a Ciência e a Tecnologia, Portugal, UK Engineering and …
Les informations concernant la publication et le financement sont déterminées automatiquement par un programme informatique