| Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S Brochen, J Brault, S Chenot, A Dussaigne, M Leroux, B Damilano Applied Physics Letters 103 (3), 2013 | 138 | 2013 |
| Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices H Rotella, Y Mazel, S Brochen, A Valla, A Pautrat, C Licitra, N Rochat, ... Journal of Physics D: Applied Physics 50 (48), 485106, 2017 | 67 | 2017 |
| Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO G Perillat-Merceroz, P Gergaud, P Marotel, S Brochen, PH Jouneau, ... Journal of Applied Physics 109 (2), 2011 | 59 | 2011 |
| Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO S Brochen, C Granier, G Feuillet, J Pernot Applied Physics Letters 100 (5), 2012 | 33 | 2012 |
| Arsenic complexes optical signatures in As-doped HgCdTe F Gemain, IC Robin, S Brochen, P Ballet, O Gravrand, G Feuillet Applied Physics Letters 102 (14), 2013 | 30 | 2013 |
| Chemically assisted vapour transport for bulk ZnO crystal growth JL Santailler, C Audoin, G Chichignoud, R Obrecht, B Kaouache, ... Journal of Crystal Growth 312 (23), 3417-3424, 2010 | 30 | 2010 |
| Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires IC Robin, P Marotel, AH El-Shaer, V Petukhov, A Bakin, A Waag, ... Journal of Crystal Growth 311 (7), 2172-2175, 2009 | 30 | 2009 |
| Low residual doping level in homoepitaxially grown ZnO layers IC Robin, A Ribeaud, S Brochen, G Feuillet, P Ferret, H Mariette, ... Applied Physics Letters 92 (14), 2008 | 24 | 2008 |
| Identification of the double acceptor levels of the mercury vacancies in HgCdTe F Gemain, IC Robin, M De Vita, S Brochen, A Lusson Applied Physics Letters 98 (13), 2011 | 22 | 2011 |
| Non-metal to metal transition in n-type ZnO single crystal materials S Brochen, G Feuillet, JL Santailler, R Obrecht, M Lafossas, P Ferret, ... Journal of Applied Physics 121 (9), 2017 | 19 | 2017 |
| Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates S Brochen, M Lafossas, IC Robin, P Ferret, F Gemain, J Pernot, G Feuillet Journal of Applied Physics 115 (11), 2014 | 19 | 2014 |
| Propriétés électriques du ZnO monocristallin S Brochen Université de Grenoble, 2012 | 19 | 2012 |
| Effect of Strontium Incorporation on the p-Type Conductivity of Cu2O Thin Films Deposited by Metal–Organic Chemical Vapor Deposition S Brochen, L Bergerot, W Favre, J Resende, C Jiménez, JL Deschanvres, ... The Journal of Physical Chemistry C 120 (31), 17261-17267, 2016 | 17 | 2016 |
| Optical and electrical studies of the double acceptor levels of the mercury vacancies in HgCdTe F Gemain, IC Robin, S Brochen, M De Vita, O Gravrand, A Lusson Journal of electronic materials 41, 2867-2873, 2012 | 13 | 2012 |
| Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties J Resende, VS Nguyen, C Fleischmann, L Bottiglieri, S Brochen, ... Scientific reports 11 (1), 7788, 2021 | 10 | 2021 |
| Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate B Damilano, S Brochen, J Brault, T Hossain, F Réveret, E Frayssinet, ... physica status solidi (a) 212 (10), 2297-2301, 2015 | 10 | 2015 |
| Residual doping in homoepitaxial zinc oxide layers grown by metal organic vapor phase epitaxy I Bisotto, C Granier, S Brochen, A Ribeaud, P Ferret, G Chicot, J Rothman, ... Applied physics express 3 (9), 095802, 2010 | 9 | 2010 |
| Erratum:“Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy”[Appl. Phys. Lett. 103 … S Brochen, J Brault, S Chenot, A Dussaigne, M Leroux, B Damilano Applied Physics Letters 103 (26), 2013 | 4 | 2013 |
| Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO S Brochen, G Feuillet, J Pernot Journal of Applied Physics 115 (16), 2014 | 3 | 2014 |
| Author Correction: Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties J Resende, VS Nguyen, C Fleischmann, L Bottiglieri, S Brochen, ... Scientific Reports 11 (1), 17427, 2021 | | 2021 |
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSAdresse e-mail validée de neel.cnrs.fr