Articles avec mandats d'accès public - Zhaofu ZHANGEn savoir plus
Non disponibles : 39
Low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
Exigences : Research Grants Council, Hong Kong
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
Exigences : Research Grants Council, Hong Kong
Transition Metal and N Doping on AlP Monolayers for Bifunctional Oxygen Electrocatalysts: Density Functional Theory Study Assisted by Machine Learning Description
X Liu, Y Zhang, W Wang*, Y Chen, W Xiao, T Liu, Z Zhong, Z Luo, Z Ding*, ...
ACS Applied Materials & Interfaces 14 (1), 1249–1259, 2022
Exigences : National Natural Science Foundation of China
Tuning Ni dopant concentration to enable co-deposited superhydrophilic self-standing Mo2C electrode for high-efficient hydrogen evolution reaction
W Liu, X Wang, J Qu, X Liu, Z Zhang, Y Guo, H Yin, D Wang
Applied Catalysis B: Environment and Energy 307, 121201, 2022
Exigences : National Natural Science Foundation of China
Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ and Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
Exigences : Research Grants Council, Hong Kong
Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications
Y Yin, Z Zhang*, H Zhong, C Shao, X Wan, C Zhang, J Robertson, Y Guo*
ACS Applied Materials & Interfaces 13 (2), 3387, 2021
Exigences : National Natural Science Foundation of China, UK Engineering and Physical …
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 937-940, 2017
Exigences : Research Grants Council, Hong Kong
Anisotropic Transport Property of Antimonene MOSFETs
Y Yin, C Shao, C Zhang, Z Zhang*, X Zhang, J Robertson, Y Guo*
ACS Applied Materials & Interfaces 12 (19), 22378, 2020
Exigences : UK Engineering and Physical Sciences Research Council
Two-dimensional metal-organic frameworks as efficient electrocatalysts for bifunctional oxygen evolution/reduction reactions
A Wang, H Niu, X Wang, X Wan, X Liu, Z Zhang, J Wang, Y Guo
Journal of Materials Chemistry A 10, 13005, 2022
Exigences : National Natural Science Foundation of China
Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering
Q Qian, Z Zhang, KJ Chen
Physical Review B 97, 165409, 2018
Exigences : Research Grants Council, Hong Kong
Revealing the nitridation effects on GaN surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy
Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen
IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017
Exigences : Research Grants Council, Hong Kong
p-type Semiconduction in Oxides with Cation Lone Pairs
Z Zhang, Y Guo, J Robertson
Chemistry of Materials 34, 643, 2022
Exigences : UK Engineering and Physical Sciences Research Council
Machine Learning Paves the Way for High Entropy Compounds Exploration: Challenges, Progress, and Outlook
X Wan, Z Li, W Yu, A Wang, X Ke, H Guo, J Su, L Li, Q Gui, S Zhao, ...
Advanced Materials, 2305192, 2023
Exigences : National Natural Science Foundation of China
High-Throughput Screening of Gas Sensor Materials for Decomposition Products of Eco-Friendly Insulation Medium by Machine Learning
X Wan, W Yu, A Wang, X Wang, J Robertson, Z Zhang*, Y Guo*
ACS Sensors 8, 2319, 2023
Exigences : National Natural Science Foundation of China
Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel
X Cai, M Hua, Z Zhang, S Yang, Z Zheng, Y Cai, KJ Chen, N Wang
Applied Physics Letters 114 (5), 2019
Exigences : Research Grants Council, Hong Kong
Characterization of static and dynamic behaviors in AlGaN/GaN-on-Si power transistors with photonic-ohmic drain
X Tang, B Li, Z Zhang, G Tang, J Wei, KJ Chen
IEEE Transactions on Electron Devices 63 (7), 2831-2837, 2016
Exigences : Research Grants Council, Hong Kong
Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4as Passivation and Post Gate-Recess …
S Liu, M Wang, M Tao, R Yin, J Gao, H Sun, W Lin, CP Wen, J Wang, ...
IEEE Electron Device Letters 38 (8), 1075-1078, 2017
Exigences : National Natural Science Foundation of China
Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications
Z Wang#, Z Zhang#, C Shao, J Robertson, S Liu, Y Guo
Applied Surface Science 527, 146843, 2020
Exigences : UK Engineering and Physical Sciences Research Council
Electronic properties and tunability of the hexagonal SiGe alloys
Z Wang#, Z Zhang#, S Liu, J Robertson, Y Guo
Applied Physics Letters 118, 172101, 2021
Exigences : National Natural Science Foundation of China, UK Engineering and Physical …
Synergistic effect of surface oxygen vacancies and hydroxyl groups on Cu-doped TiO2 photocatalyst for hydrogen evolution
C Xing#, Z Zhang#, Y Zhang*, X Han, L Yang, J Li, X Wang, P Martinez, ...
Materials Today Nano 24, 100435, 2023
Exigences : National Natural Science Foundation of China, Government of Spain
Les informations concernant la publication et le financement sont déterminées automatiquement par un programme informatique