The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
1243 2018 Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ...
IEEE Electron Device Letters 40 (4), 526-529, 2019
156 2019 Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
129 2016 Characterization of Leakage and Reliability of SiNx M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015
123 2015 Tunable Properties of Novel Ga2 O3 Monolayer for Electronic and Optoelectronic Applications Y Liao, Z Zhang, Z Gao, Q Qian, M Hua
ACS applied materials & interfaces 12 (27), 30659-30669, 2020
114 2020 GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
105 2015 Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
99 2015 Normally-Off LPCVD-SiNx M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
90 2017 Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx x J He, M Hua, Z Zhang, KJ Chen
IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018
82 2018 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
76 2017 OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020
72 2020 O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 2015
71 2015 Two-dimensional gallium oxide monolayer for gas-sensing application J Zhao, X Huang, Y Yin, Y Liao, H Mo, Q Qian, Y Guo, X Chen, Z Zhang, ...
The Journal of Physical Chemistry Letters 12 (24), 5813-5820, 2021
69 2021 E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
67 2020 Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach EU Haq, X Lyu, Y Jia, M Hua, F Ahmad
Energy Reports 6, 1099-1105, 2020
65 2020 Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 27676, 2016
65 2016 Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
57 2015 Bridging the gap between atomically thin semiconductors and metal leads X Cai, Z Wu, X Han, Y Chen, S Xu, J Lin, T Han, P He, X Feng, L An, R Shi, ...
Nature communications 13 (1), 1777, 2022
49 2022 Dependence of M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
48 2018 Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 K Kim, M Hua, D Liu, J Kim, KJ Chen, Z Ma
Nano Energy 43, 259-269, 2018
47 2018 
Jin WeiPeking UniversityAdresse e-mail validée de pku.edu.cn
