| Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel S Park, Y Jeong, HJ Jin, J Park, H Jang, S Lee, W Huh, H Cho, HG Shin, ... ACS nano 14 (9), 12064-12071, 2020 | 52 | 2020 |
| Ambipolar Channel p‐TMD/n‐Ga2O3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel W Choi, J Ahn, KT Kim, HJ Jin, S Hong, DK Hwang, S Im Advanced Materials 33 (38), 2103079, 2021 | 49 | 2021 |
| High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2 KT Kim, HJ Jin, W Choi, Y Jeong, HG Shin, Y Lee, K Kim, S Im Advanced Functional Materials 31 (21), 2010303, 2021 | 37 | 2021 |
| Virtual Out-of-Plane Piezoelectric Response in MoS2 Layers Controlled by Ferroelectric Polarization HJ Jin, WY Yoon, W Jo ACS applied materials & interfaces 10 (1), 1334-1339, 2018 | 35 | 2018 |
| Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ... npj 2D Materials and Applications 6 (1), 23, 2022 | 25 | 2022 |
| Optical and Scanning Probe Identification of Electronic Structure and Phases in CH3NH3PbBr3 Crystal HR Jung, GY Kim, BP Nguyen, HJ Jin, W Jo, TT Thu Nguyen, S Yoon, ... The Journal of Physical Chemistry C 121 (40), 21930-21934, 2017 | 25 | 2017 |
| Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel Y Jeong, HJ Jin, JH Park, Y Cho, M Kim, S Hong, W Jo, Y Yi, S Im Advanced Functional Materials 30 (7), 1908210, 2020 | 21 | 2020 |
| Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors S Park, HJ Lee, W Choi, HJ Jin, H Cho, Y Jeong, S Lee, K Kim, S Im Advanced Functional Materials 32 (13), 2108737, 2022 | 20 | 2022 |
| Control of work function of MoS2 with ferroelectric polarization in honeycomb-like heterostructure HJ Jin, WY Yoon, W Jo Applied Physics Letters 110 (19), 2017 | 17 | 2017 |
| 2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps LJ Widiapradja, T Nam, Y Jeong, HJ Jin, Y Lee, K Kim, S Lee, H Kim, ... Advanced Electronic Materials 7 (5), 2100074, 2021 | 14 | 2021 |
| Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers YS Kim, HJ Jin, HR Jung, J Kim, BP Nguyen, J Kim, W Jo Scientific Reports 11 (1), 6810, 2021 | 13 | 2021 |
| Ultra-large current transport in thick SmBa2Cu3O7− x films grown by reactive co-evaporation G Kim, HJ Jin, W Jo, DH Nam, H Cheong, HS Kim, SS Oh, RK Ko, YS Jo, ... Physica C: Superconductivity and its Applications 513, 29-34, 2015 | 10 | 2015 |
| Surface potential mapping and n-type conductivity in organic–inorganic lead iodide crystals HR Jung, BP Nguyen, HJ Jin, TTT Nguyen, S Yoon, WS Woo, CW Ahn, ... CrystEngComm 20 (41), 6551-6556, 2018 | 9 | 2018 |
| 5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors H Cho, HJ Jin, S Lee, S Jeon, Y Cho, S Park, M Jang, LJ Widiapradja, ... Advanced Materials 35 (22), 2300478, 2023 | 8 | 2023 |
| Photo-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization HJ Jin, J Kim, Y Kim, S Yoon, Y Lee, K Kim, W Jo Journal of Materials Chemistry C 8 (11), 3724-3729, 2020 | 7 | 2020 |
| Structural properties and phase formation of epitaxial PbVO3 thin films grown on LaAlO3 (0 0 1) by pulsed laser deposition SH Oh, HJ Jin, HY Shin, RH Shin, S Yoon, YS Seo, JS Ahn, W Jo Journal of Physics D: Applied Physics 47 (24), 245302, 2014 | 7 | 2014 |
| Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3 WY Yoon, HJ Jin, W Jo ACS applied materials & interfaces 11 (49), 46344-46349, 2019 | 5 | 2019 |
| Microstructural investigation of phases and pinning properties in MBa2Cu3O7− x (M= Y and/or Gd) coated conductors produced by scale-up facilitie HJ Jin, HK Moon, S Yoon, W Jo, K Kim, M Kim, RK Ko, YS Jo, DW Ha Superconductor Science and Technology 29 (3), 035016, 2016 | 5 | 2016 |
| Spatial Investigation on Structural Properties of GdBa2Cu3O7 − xCoated Conductors Grown on IBAD-MgO Based Stainless-Steel Substrates HJ Jin, G Kim, W Jo, HY Shin, S Yoon, K Kim, M Kim IEEE Transactions on Applied Superconductivity 25 (3), 1-4, 2014 | 5 | 2014 |
| Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices HJ Kim, S Hong, C Jang, HJ Jin, H Woo, H Bae, S Im ACS nano 18 (11), 8546-8554, 2024 | 4 | 2024 |