| Nonlinear dynamics of a locally-active memristor A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015 | 199 | 2015 |
| Physical model of threshold switching in NbO 2 based memristors S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ... RSC advances 5 (124), 102318-102322, 2015 | 178 | 2015 |
| Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films H Wylezich, H Mähne, J Rensberg, C Ronning, P Zahn, S Slesazeck, ... ACS applied materials & interfaces 6 (20), 17474-17480, 2014 | 61 | 2014 |
| Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films H Mähne, L Berger, D Martin, V Klemm, S Slesazeck, S Jakschik, ... Solid-State Electronics 72, 73-77, 2012 | 52 | 2012 |
| The influence of crystallinity on the resistive switching behavior of TiO2 H Mähne, S Slesazeck, S Jakschik, I Dirnstorfer, T Mikolajick Microelectronic engineering 88 (7), 1148-1151, 2011 | 42 | 2011 |
| Analog resistive switching behavior of Al/Nb2O5/Al device H Mähne, H Wylezich, F Hanzig, S Slesazeck, D Rafaja, T Mikolajick Semiconductor Science and Technology 29 (10), 104002, 2014 | 37 | 2014 |
| Room temperature fabricated NbOx/Nb2O5memory switching device with threshold switching effect H Mähne, H Wylezich, S Slesazeck, T Mikolajick, J Vesely, V Klemm, ... 2013 5th IEEE International Memory Workshop, 174-177, 2013 | 37 | 2013 |
| Ferroelectric FETs with separated capacitor in the back-end-of-line: Role of the capacitance ratio D Lehninger, R Hoffmann, A Sünbül, H Mähne, T Kämpfe, K Bernert, ... IEEE Electron Device Letters 43 (11), 1866-1869, 2022 | 22 | 2022 |
| Unfolding the local activity of a memristor A Ascoli, S Slesazeck, R Tetzlaff, H Mähne, T Mikolajick 2014 14th International Workshop on Cellular Nanoscale Networks and their …, 2014 | 22 | 2014 |
| Memory array demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 18 | 2022 |
| Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal–insulator–metal stacks F Hanzig, H Mähne, J Veselý, H Wylezich, S Slesazeck, A Leuteritz, ... Journal of Electron Spectroscopy and Related Phenomena 202, 122-127, 2015 | 18 | 2015 |
| Integration of BEoL compatible 1T1C FeFET memory into an established CMOS technology D Lehninger, H Mähne, T Ali, R Hoffmann, R Olivo, M Lederer, K Mertens, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 17 | 2022 |
| Versatile resistive switching in niobium oxide T Mikolajick, H Wylezich, H Maehne, S Slesazeck 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 381-384, 2016 | 17 | 2016 |
| Memristive device based on a depletion-type SONOS field effect transistor N Himmel, M Ziegler, H Mähne, S Thiem, H Winterfeld, H Kohlstedt Semiconductor Science and Technology 32 (6), 06LT01, 2017 | 13 | 2017 |
| Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells I Dirnstorfer, H Mähne, T Mikolajick, M Knaut, M Albert, K Dubnack Journal of Vacuum Science & Technology A 31 (1), 2013 | 13 | 2013 |
| Unfolding the threshold switching behavior of a memristor S Slesazeck, A Ascoli, H Mähne, R Tetzlaff, T Mikolajick Nonlinear Dynamics of Electronic Systems: 22nd International Conference …, 2014 | 12 | 2014 |
| Thermally activated crystallization of Nb2O5 grown on Pt electrode L Berger, H Mähne, V Klemm, A Leuteritz, T Mikolajick, D Rafaja Applied Physics A 108 (2), 431-437, 2012 | 12 | 2012 |
| A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing A Sünbül, D Lehninger, M Lederer, H Mähne, R Hoffmann, K Bernert, ... physica status solidi (a) 220 (7), 2300067, 2023 | 8 | 2023 |
| Multilevel switching characteristics for WOx resistive RAM WC Chien, KP Chang, YC Chen, EK Lai, H Mahne, YD Yao, P Lin, J Gong, ... Proc. Tech. Dig. SSDM, 1170-1171, 2008 | 8 | 2008 |
| Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation H Wylezich, H Mähne, A Heinrich, S Slesazeck, J Rensberg, C Ronning, ... Journal of Vacuum Science & Technology B 33 (1), 2015 | 6 | 2015 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenAdresse e-mail validée de namlab.com