| Titanium silicide formation: Effect of oxygen distribution in the metal film M Berti, AV Drigo, C Cohen, J Siejka, GG Bentini, R Nipoti, S Guerri Journal of applied physics 55 (10), 3558-3565, 1984 | 129 | 1984 |
| Spiral and concentric-circle walls observed by lorentz microscopy(Rotation of very thin nickel-iron films in a constant field, observing inward-growing spirals and concentric … MS Cohen JOURNAL OF APPLIED PHYSICS, 1962 | 109* | 1962 |
| Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures HM Ayedh, R Nipoti, A Hallén, BG Svensson Applied Physics Letters 107 (25), 2015 | 84 | 2015 |
| Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals GG Bentini, R Nipoti, A Armigliato, M Berti, AV Drigo, C Cohen Journal of Applied Physics 57 (2), 270-275, 1985 | 79 | 1985 |
| Ion implantation induced swelling in 6H-SiC R Nipoti, E Albertazzi, M Bianconi, R Lotti, G Lulli, M Cervera, A Carnera Applied physics letters 70 (25), 3425-3427, 1997 | 77 | 1997 |
| Formation of carbon vacancy in 4H silicon carbide during high-temperature processing HM Ayedh, V Bobal, R Nipoti, A Hallén, BG Svensson Journal of Applied Physics 115 (1), 2014 | 76 | 2014 |
| Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, ... IEEE transactions on nuclear science 53 (3), 1557-1563, 2006 | 75 | 2006 |
| Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET F Moscatelli, A Poggi, S Solmi, R Nipoti IEEE Transactions on Electron Devices 55 (4), 961-967, 2008 | 67 | 2008 |
| Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra G Lulli, E Albertazzi, M Bianconi, GG Bentini, R Nipoti, R Lotti Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 65 | 2000 |
| Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation A Parisini, R Nipoti Journal of Applied Physics 114 (24), 2013 | 63 | 2013 |
| Carbon-cap for ohmic contacts on ion-implanted 4H–SiC R Nipoti, F Mancarella, F Moscatelli, R Rizzoli, S Zampolli, M Ferri Electrochemical and Solid-State Letters 13 (12), H432, 2010 | 63 | 2010 |
| Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison E Albertazzi, M Bianconi, G Lulli, R Nipoti, M Cantiano Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 61 | 1996 |
| Electrical properties of Al2O3∕ 4H‐SiC structures grown by atomic layer chemical vapor deposition M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti, ... Journal of Applied Physics 102 (5), 2007 | 58 | 2007 |
| Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC R Nipoti, R Scaburri, A Hallén, A Parisini Journal of Materials Research 28, 17-22, 2013 | 53 | 2013 |
| Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si G Lulli, E Albertazzi, M Bianconi, R Nipoti, M Cervera, A Carnera, ... Journal of applied physics 82 (12), 5958-5964, 1997 | 52 | 1997 |
| Defects related to electrical doping of 4H-SiC by ion implantation R Nipoti, HM Ayedh, BG Svensson Materials Science in Semiconductor Processing 78, 13-21, 2018 | 46 | 2018 |
| Microwave annealing of very high dose aluminum-implanted 4H-SiC R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian Applied Physics Express 4 (11), 111301, 2011 | 42 | 2011 |
| Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, ... Journal of Applied Physics 108 (2), 2010 | 38 | 2010 |
| Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 36 | 2014 |
| Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera Applied physics letters 88 (16), 2006 | 36 | 2006 |
