Articles avec mandats d'accès public - Maolin ZhangEn savoir plus
Non disponibles : 39
Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector
Z Liu, L Du, SH Zhang, L Li, ZY Xi, JC Tang, JP Fang, ML Zhang, LL Yang, ...
IEEE Transactions on Electron Devices 69 (10), 5595-5602, 2022
Exigences : National Natural Science Foundation of China
Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing
Z Xi, Z Liu, L Yang, K Tang, L Li, G Shen, M Zhang, S Li, Y Guo, W Tang
ACS Applied Materials & Interfaces 15 (34), 40744-40752, 2023
Exigences : National Natural Science Foundation of China
16 × 16 Solar-Blind UV Detector Based on β-Ga2O3 Sensors
GH Shen, Z Liu, ML Zhang, YF Guo, WH Tang
IEEE Electron Device Letters 44 (7), 1140-1143, 2023
Exigences : National Natural Science Foundation of China
Boosting β-Ga2O3 Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance
Z Liu, SL Sha, GH Shen, MM Jiang, ML Zhang, YF Guo, WH Tang
IEEE Electron Device Letters 44 (8), 1324-1327, 2023
Exigences : National Natural Science Foundation of China
High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction
M Zhang, Z Liu, L Yang, J Yao, J Chen, J Zhang, W Wei, Y Guo, W Tang
Journal of Physics D: Applied Physics 55 (37), 375106, 2022
Exigences : National Natural Science Foundation of China
Automatic selection of structure parameters of silicon on insulator lateral power device using Bayesian optimization
J Chen, MB Alawieh, Y Lin, M Zhang, J Zhang, Y Guo, DZ Pan
IEEE Electron Device Letters 41 (9), 1288-1291, 2020
Exigences : National Natural Science Foundation of China
A broadband UV-visible photodetector based on a Ga2O3/BFO heterojunction
G Ma, W Jiang, W Sun, Z Yan, B Sun, S Li, M Zhang, X Wang, A Gao, ...
Physica Scripta 96 (12), 125823, 2021
Exigences : National Natural Science Foundation of China
Enhancement-mode normally-off β-Ga2O3: Si metal-semiconductor field-effect deep-ultraviolet phototransistor
Z Liu, M Zhang, L Yang, S Li, S Zhang, K Li, P Li, Y Guo, W Tang
Semiconductor Science and Technology 37 (1), 015001, 2021
Exigences : National Natural Science Foundation of China
Hybrid PEDOT: PSS/SiC heterojunction UV photodetector with superior self-powered responsivity over A/W level
S Li, L Yang, Z Liu, M Zhang, Y Guo, W Tang
Applied Physics Letters 122 (19), 2023
Exigences : National Natural Science Foundation of China
Study of Nonthermal-Equilibrium Carrier Recombination and Transport in β–Ga2O3Metal–Semiconductor–Metal Deep-Ultraviolet Photodetectors
M Zhang, W Ma, S Li, L Yang, Z Liu, Y Guo, W Tang
IEEE Transactions on Electron Devices 70 (5), 2336-2341, 2023
Exigences : National Natural Science Foundation of China
A 2.2 kV organic semiconductor-based lateral power device
J Zhang, J Zhou, Y Wang, M Li, L Du, J Chen, M Zhang, J Yao, G Zhang, ...
IEEE Electron Device Letters 43 (2), 276-279, 2021
Exigences : National Natural Science Foundation of China
A deep-ultraviolet photodetector of a β-Ga2O3/CuBiI4 heterojunction highlighting ultra-high sensitivity and responsivity
X Qi, J Yue, X Ji, Z Liu, S Li, Z Yan, M Zhang, L Yang, P Li, D Guo, Y Guo, ...
Thin Solid Films 757, 139397, 2022
Exigences : National Natural Science Foundation of China
High-performance self-powered GaN/PEDOT: PSS hybrid heterojunction UV photodetector for optical communication
S Li, Z Liu, ML Zhang, LL Yang, YF Guo, WH Tang
Science China Technological Sciences 67 (2), 608-615, 2024
Exigences : National Natural Science Foundation of China
Breakdown voltage prediction of SOI lateral power device using deep neural network
J Chen, Y Guo, Y Lin, MB Alawieh, M Zhang, J Zhang, DZ Pan
2019 Cross Strait Quad-Regional Radio Science and Wireless Technology …, 2019
Exigences : National Natural Science Foundation of China
Specific on-resistance reduction for the LDMOS using separated composite dielectric trenches
J Yao, T Xu, M Sun, X Liu, K Yang, M Li, J Chen, M Zhang, J Zhang, ...
IEEE Transactions on Electron Devices, 2023
Exigences : National Natural Science Foundation of China
Pyro-photoelectric effect enhanced dual-mode self-powered ITO/ZnO: Ga microwire/AlGaN thin-film heterojuncted ultraviolet imaging photodetector
L Li, Z Liu, K Tang, SL Sha, SH Zhang, MM Jiang, ML Zhang, A Bian, ...
IEEE Sensors Journal 23 (12), 12767-12774, 2023
Exigences : National Natural Science Foundation of China
A self-powered ultraviolet photodetector based on a Ga2O3/Bi2WO6 heterojunction with low noise and stable photoresponse
LL Yang, YS Peng, Z Liu, ML Zhang, YF Guo, Y Yang, WH Tang
Chinese Physics B 32 (4), 047301, 2023
Exigences : National Natural Science Foundation of China
High Baliga’s figure of merit amorphous InGaZnO power transistor with ultra-thin indium zinc oxide buried layer
C Huang, X Huang, J Yao, J Zhang, M Li, J Liu, M Zhang, X Zhou, Y Guo
IEEE Electron Device Letters 44 (5), 769-772, 2023
Exigences : National Natural Science Foundation of China
An efficient automatic structure design method of silicon-on-insulator lateral power device considering RESURF constraint
J Chen, Y Guo, MB Alawieh, M Zhang, J Zhang, DZ Pan
IEEE Transactions on Electron Devices 68 (9), 4593-4597, 2021
Exigences : National Natural Science Foundation of China
Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport
S Yao, Z Liu, M Zhang, L Shu, Z Xi, L Li, S Yan, Y Guo, W Tang
ACS Applied Electronic Materials 5 (12), 7061-7069, 2023
Exigences : National Natural Science Foundation of China
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