Resonant cavity-enhanced (RCE) photodetectors K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc
IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991
476 1991 Efficient Single-Photon Sources Based on Low-Density Quantum Dots<? format?> in Photonic-Crystal Nanocavities WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu
Physical review letters 96 (11), 117401, 2006
388 2006 Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ...
Applied Physics Letters 77 (19), 2988-2990, 2000
305 2000 Light emitting diode element and method for fabricating the same HC Lin, CM Lee, JI Chyi
US Patent 8,101,447, 2012
268 2012 Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi
Physical Review B 62 (11), 6959, 2000
210 2000 L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
184 2003 AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi
Applied physics letters 81 (9), 1729-1731, 2002
179 2002 JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
143 2000 Growth of InSb and InAs1−x Sbx JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc
Applied physics letters 53 (12), 1092-1094, 1988
143 1988 Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
137 2004 Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi
Journal of Applied Physics 92 (8), 4441-4448, 2002
134 2002 GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
134 2001 Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
128 2002 Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells CC Chuo, CM Lee, JI Chyi
Applied Physics Letters 78 (3), 314-316, 2001
119 2001 High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
119 2000 Comparison of GaN pin and Schottky rectifier performance AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ...
IEEE Transactions on Electron Devices 48 (3), 407-411, 2001
117 2001 Molecular beam epitaxial growth and characterization of InSb on Si JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ...
Applied physics letters 54 (11), 1016-1018, 1989
107 1989 Vertical and lateral GaN rectifiers on free-standing GaN substrates AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
Applied Physics Letters 79 (10), 1555-1557, 2001
106 2001 Mechanism of luminescence in InGaN/GaN multiple quantum wells HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi
Applied Physics Letters 76 (25), 3712-3714, 2000
106 2000 Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi
Applied Physics Letters 76 (6), 691-693, 2000
103 2000 
Fan RenUniversity of Florida, Bell Lab, AT&TAdresse e-mail validée de che.ufl.edu