Peide Ye

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Gang QiuUniversity of MinnesotaAdresse e-mail validée de g.ucla.edu
Han LiuApple Inc.Adresse e-mail validée de apple.com
Adam T. NealAir Force Research LabAdresse e-mail validée de us.af.mil
Yi XUANUniversity of Pittsburgh, School of MedicineAdresse e-mail validée de pitt.edu
Xianfan XuPurdue UniversityAdresse e-mail validée de purdue.edu
Yanqing WuPeking UniversityAdresse e-mail validée de pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Purdue Quantum Science&Engineering InstituteAdresse e-mail validée de purdue.edu
Adam CharnasAir Force Research LaboratoryAdresse e-mail validée de purdue.edu
Hong ZhouXidian UniversityAdresse e-mail validée de xidian.edu.cn
Zehao LinPhD Candidate in Electrical & Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Haiyan WangPurdue UniversityAdresse e-mail validée de purdue.edu
Chang NiuPurdue UniversityAdresse e-mail validée de purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Dennis Han Chung LinIMECAdresse e-mail validée de imec.be
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTAdresse e-mail validée de purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichAdresse e-mail validée de ur.de
M. HongNatl Taiwan Univ. Bell LaboratoriesAdresse e-mail validée de phys.ntu.edu.tw
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityAdresse e-mail validée de kau.edu.sa
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu

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Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Adresse e-mail validée de purdue.edu - Page d'accueil

Microelectronic devices nano-materials nano-electronics condense-matter physics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6717	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1569	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1360	2014
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	940	2020
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	935	2012
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	815	2014
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	799	2018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	735	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	641	2007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	610	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	581	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	550	2012
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	542	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	540	2018
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	504	2014
A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019	503	2019
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	450	1995
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	417	2003
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	415	2008
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano letters 13 (6), 2640-2646, 2013	396	2013

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